PSMN015-110P,127 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN015-110P,127 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 110V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is part of the TrenchMOS™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220 package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	110	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 25A, 10V	15	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	4	V
Gate Charge (Qg) @ 10V	90	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitute parts for the PSMN015-110P,127 are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (Vdss): Minimum 100V (substitute parts rated at 100V are acceptable for 110V applications with appropriate circuit design margin)
Continuous Drain Current (Id): Minimum 57A (all substitutes meet or exceed the 75A requirement or provide equivalent thermal performance)
Package Type: TO-220 through-hole configuration (TO-220AB or TO-220-3 variants)
Gate Drive Voltage: 10V maximum Rds On specification
Operating Temperature Range: Minimum -55°C to 150°C (175°C preferred for full compatibility)
Compliance: RoHS3 compliant, REACH unaffected

Substitution Logic: All substitute parts operate as N-Channel MOSFETs with compatible gate drive characteristics (±20V maximum gate voltage). Voltage ratings of 100V on substitute parts provide functional equivalence for circuits designed around the 110V main part, as the 10V margin accommodates typical application requirements. Current ratings and thermal dissipation vary among substitutes, allowing selection based on specific application thermal and current demands.

Parameter Comparison

Parameter	PSMN015-110P,127	FDP120N10	FDP150N10	IRFB4510PBF	IXTP80N10T
Manufacturer	Nexperia USA Inc.	onsemi	onsemi	Infineon Technologies	IXYS
Vdss (V)	110	100	100	100	100
Id @ 25°C (A)	75	74	57	62	80
Rds On (mOhm)	15 @ 25A, 10V	12 @ 74A, 10V	15 @ 49A, 10V	13.5 @ 37A, 10V	14 @ 25A, 10V
Vgs(th) (V)	4 @ 1mA	4.5 @ 250µA	4.5 @ 250µA	4 @ 100µA	5 @ 100µA
Gate Charge Qg (nC)	90 @ 10V	86 @ 10V	69 @ 10V	87 @ 10V	60 @ 10V
Power Dissipation (W)	300	170	110	140	230
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175
Package	TO-220AB	TO-220-3	TO-220-3	TO-220AB	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDP120N10 (onsemi PowerTrench®) The FDP120N10 provides the closest current rating match at 74A, with superior on-state resistance of 12mOhm compared to the main part's 15mOhm. This substitute is active in production with full RoHS3 compliance and operates across the complete temperature range (-55°C to 175°C). The 100V Vdss rating is suitable for applications designed within standard voltage margins. Gate charge of 86nC is comparable to the original part.

IXTP80N10T (IXYS Trench) The IXTP80N10T exceeds the original current specification at 80A and delivers superior power dissipation capability at 230W, approaching the original 300W rating. This part features the lowest gate charge at 60nC, enabling faster switching characteristics. Full temperature range support (-55°C to 175°C) and active production status make this suitable for high-performance applications. The TO-220-3 package is mechanically compatible with standard TO-220 footprints.

IRFB4510PBF (Infineon HEXFET®) The IRFB4510PBF operates at 62A continuous current with 13.5mOhm on-state resistance and 140W power dissipation. This part maintains the TO-220AB package format, providing direct mechanical compatibility. Active production status, full temperature range support, and RoHS3 compliance ensure long-term availability. Gate threshold voltage matches the original part at 4V.

FDP150N10 (onsemi PowerTrench®) The FDP150N10 is suitable for applications with reduced current requirements (57A) and lower thermal dissipation needs (110W). This part features the lowest gate charge at 69nC and is active in production. The operating temperature range extends to 150°C, which is acceptable for most applications but does not cover the full -55°C to 175°C range of the original part. This substitute is appropriate for cost-optimized designs with moderate thermal requirements.

Frequently Asked Questions (FAQ)

Q: Can I use a 100V rated substitute in place of the 110V rated PSMN015-110P,127?

A: Yes. All substitute parts are rated for 100V Vdss, which is acceptable for circuits designed around the 110V specification. Standard circuit design practice incorporates voltage margin, and the 10V difference is within typical application tolerances. However, applications operating at maximum voltage stress should be evaluated against specific circuit requirements.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole TO-220 packages with identical pin spacing and PCB footprint compatibility. TO-220AB and TO-220-3 designations refer to minor variations in lead forming and supplier specifications but are mechanically and electrically interchangeable for standard applications. All substitute parts are compatible with existing TO-220 PCB layouts.

Q: Which substitute part should I select for maximum current handling?

A: The IXTP80N10T provides the highest continuous drain current at 80A and the highest power dissipation at 230W, making it suitable for high-current applications. The FDP120N10 offers 74A current rating with superior on-state resistance characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts (FDP120N10, FDP150N10, IRFB4510PBF, and IXTP80N10T) are RoHS3 compliant and REACH unaffected, matching the compliance status of the original PSMN015-110P,127.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (IXTP80N10T at 60nC) enables faster switching and reduces gate drive power consumption. Higher gate charge (PSMN015-110P,127 at 90nC) requires more robust gate drive circuits but is not a limiting factor for standard applications. All substitute parts operate with standard 10V gate drive specifications.

Q: Can I use the FDP150N10 if my application requires operation at 175°C?

A: No. The FDP150N10 is rated to 150°C maximum junction temperature, which is 25°C below the original part and other substitutes. For applications requiring full -55°C to 175°C operation, select the FDP120N10, IRFB4510PBF, or IXTP80N10T.

Q: How do on-state resistance values affect substitute selection?

A: On-state resistance (Rds On) directly impacts power dissipation and heat generation. Lower Rds On values reduce conduction losses. The FDP120N10 at 12mOhm offers the lowest resistance, while the FDP150N10 and PSMN015-110P,127 both specify 15mOhm. For applications with high continuous current or strict thermal budgets, lower Rds On values are preferred.

Q: Are all substitute parts available in production quantities?

A: Yes. All substitute parts are classified as active products with significant inventory availability: FDP120N10 (50,300 pcs), FDP150N10 (13,918 pcs), IRFB4510PBF (15,363 pcs), and IXTP80N10T (1,426 pcs). The original PSMN015-110P,127 is obsolete with limited remaining inventory (891 pcs).

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