PSMN014-60LS,115 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN014-60LS,115 is an N-Channel 60V 40A MOSFET manufactured by NXP USA Inc., designed for surface mount applications in the 8-DFN3333 (3.3x3.3) package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 65W maximum power dissipation at case temperature and operates across the -55°C to 150°C temperature range. Identifying compatible substitutes requires matching critical electrical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and physical package compatibility.

Substiute Parts

PSMN014-60LS,115

NXP USA Inc.In Stock: 1179PSMN014-60LS,115 Datasheet

Current PartRFQ

RQ3L090GNTB

Rohm SemiconductorIn Stock: 18400RQ3L090GNTB Datasheet

MFR RecommendedRFQ

STL50N6F7

STMicroelectronicsIn Stock: 9095STL50N6F7 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PSMN014-60LS,115 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Matching Criteria:

• Drain-Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must support the application's current requirements
• On-Resistance (Rds On): Lower values indicate improved efficiency; values within ±20% of the original are acceptable for most applications
• Gate Threshold Voltage (Vgs(th)): Must fall within compatible drive voltage ranges
• Package Type: Surface mount configuration with compatible footprint dimensions
• Temperature Rating: Operating range must encompass application requirements
• Compliance: RoHS3 and REACH status must match or exceed original specifications

The two substitute parts identified—RQ3L090GNTB (Rohm Semiconductor) and STL50N6F7 (STMicroelectronics)—both maintain the 60V Vdss rating and N-Channel MOSFET technology. However, they differ significantly in continuous drain current capability and package form factor, requiring application-specific evaluation.

Parameter Comparison

Engineering Selection Recommendations

RQ3L090GNTB (Rohm Semiconductor) – Limited Current Applications:

The RQ3L090GNTB maintains the 60V Vdss rating and offers comparable on-resistance (13.9 mOhm) to the original part. However, its continuous drain current rating of 30A (Tc) falls below the PSMN014-60LS,115 specification of 40A. This substitute is suitable only for applications requiring continuous drain currents up to 30A. The lower gate threshold voltage (2.7V) may require drive circuit adjustment. The 8-HSMT package (3.2x3) differs from the original 8-DFN3333, necessitating PCB layout modification. Product status is active, ensuring long-term availability. RoHS3 compliance and MSL 1 rating match the original specifications.

STL50N6F7 (STMicroelectronics) – Higher Current and Temperature Applications:

The STL50N6F7 exceeds the original part's continuous drain current specification at 60A (Tc), providing design margin for high-current applications. On-resistance is superior at 11 mOhm, reducing power dissipation. Maximum power dissipation of 71W (Tc) slightly exceeds the original 65W. The extended operating temperature range (-55°C to 175°C) provides additional thermal headroom compared to the original -55°C to 150°C range. Gate charge is lower at 17 nC, improving switching speed. The PowerFlat™ package (5x6) is physically larger than the original 8-DFN3333, requiring significant PCB redesign. Product status is active with full RoHS3 and MSL 1 compliance.

Selection Basis:

Both substitutes are active products with current manufacturing support, addressing the obsolescence of the original PSMN014-60LS,115. Selection depends on application current requirements and thermal constraints. The RQ3L090GNTB suits designs with current demands up to 30A and space constraints. The STL50N6F7 is appropriate for applications requiring 40A or higher continuous current and can tolerate larger package dimensions.

Frequently Asked Questions (FAQ)

Q1: Can the RQ3L090GNTB directly replace the PSMN014-60LS,115 in all applications?

No. The RQ3L090GNTB's continuous drain current rating of 30A (Tc) is insufficient for applications requiring the full 40A capability of the original part. Verify your application's actual current requirements before substitution. Additionally, the package footprint differs (8-HSMT vs. 8-DFN3333), requiring PCB layout changes.

Q2: Is the STL50N6F7 a pin-compatible replacement?

No. While both are N-Channel 60V MOSFETs, the STL50N6F7 uses a PowerFlat™ (5x6) package compared to the original 8-DFN3333 (3.3x3.3) package. Pin assignments and footprints are different, requiring PCB redesign. However, electrical parameters are compatible for applications requiring 40A or higher continuous current.

Q3: What is the impact of different gate threshold voltages on circuit design?

The RQ3L090GNTB has a lower gate threshold voltage (2.7V) compared to the original (4V) and STL50N6F7 (4V). This affects gate drive circuit design. Lower threshold voltage may allow operation with lower gate drive voltages but requires verification that the drive circuit can reliably turn the device on and off within your application's timing requirements.

Q4: Are there thermal considerations when substituting these parts?

Yes. The RQ3L090GNTB has a maximum power dissipation of only 2W (Ta), significantly lower than the original 65W (Tc). This indicates reduced thermal capability and limits its use to lower-power applications. The STL50N6F7 at 71W (Tc) provides comparable thermal performance to the original. Verify thermal management requirements for your specific application.

Q5: Do all three parts meet the same compliance standards?

Yes. The PSMN014-60LS,115, RQ3L090GNTB, and STL50N6F7 are all RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity ratings. Compliance documentation is equivalent across all three parts.

Q6: What is the significance of the different package types?

Package type affects PCB layout, thermal dissipation, and assembly compatibility. The original 8-DFN3333 (3.3x3.3) is a compact surface mount package. The RQ3L090GNTB uses 8-HSMT (3.2x3), slightly smaller. The STL50N6F7 uses PowerFlat™ (5x6), significantly larger. Substitution requires PCB redesign unless the new package footprint is compatible with existing board layouts.

Q7: How do gate charge differences affect switching performance?

The original part has 19.6 nC gate charge at 10V. The RQ3L090GNTB has 24.5 nC (higher), while the STL50N6F7 has 17 nC (lower). Higher gate charge requires more drive current and longer switching times. Lower gate charge improves switching speed and reduces drive circuit power consumption. Verify that your gate drive circuit can supply the required charge for the selected substitute.

Q8: Can I use the RQ3L090GNTB in a 40A application if I derate the current?

The RQ3L090GNTB's 30A (Tc) rating is a maximum specification. Operating at 40A would exceed this specification and violate the device's electrical ratings, regardless of derating. Use only within the specified continuous drain current limits. For 40A applications, select the STL50N6F7 or identify alternative parts with appropriate current ratings.