PSMN013-30LL,115 N-Channel MOSFET 30V 21A Equivalent & Substitute Parts

Part Overview

The PSMN013-30LL,115 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 30V drain-to-source voltage with 21A continuous drain current at 25°C. The device is housed in an 8-DFN3333 (3.3x3.3) surface mount package with 41W maximum power dissipation. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Id)	21	A (Tc)
On-State Resistance (Rds On) @ 5A, 10V	13	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	2.15	V
Gate Charge (Qg) @ 10V	12.2	nC
Input Capacitance (Ciss) @ 15V	768	pF
Power Dissipation (Max)	41	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-VDFN Exposed Pad	-
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the PSMN013-30LL,115 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id) @ 25°C: Must meet or exceed 21A (Tc rating)
Gate Drive Voltage Compatibility: 4.5V to 10V range
Maximum Gate-Source Voltage (Vgs): ±20V minimum
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount
Package Compatibility: 8-pin DFN or equivalent footprint

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must support thermal requirements

The substitute parts listed below satisfy the primary criteria while offering varying performance characteristics in secondary parameters. Selection depends on specific application thermal and switching requirements.

Parameter Comparison

Parameter	PSMN013-30LL,115	AON7400A	AON7406	AON7410	BSC025N03MSGATMA1	BSZ019N03LSATMA1	BSZ035N03LSGATMA1	BSZ050N03LSGATMA1
Vdss (V)	30	30	30	30	30	30	30	30
Id @ 25°C (A, Tc)	21	40	25	24	100	40	40	40
Rds On (mOhm) @ 10V	13 @ 5A	7.5 @ 20A	17 @ 9A	20 @ 8A	2.5 @ 30A	1.9 @ 20A	3.5 @ 20A	5 @ 20A
Vgs(th) (V)	2.15 @ 1mA	2.5 @ 250µA	2.4 @ 250µA	2.5 @ 250µA	2 @ 250µA	2 @ 250µA	2.2 @ 250µA	2.2 @ 250µA
Qg (nC) @ 10V	12.2	24	18	12	98	44	56	35
Ciss (pF) @ 15V	768	1380	888	660	7600	2800	4400	2800
Power Dissipation (W, Tc)	41	25	15.5	20	83	69	69	50
Package	8-VDFN	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
Vgs (Max) (V)	±20	±20	±20	±20	±20	±20	±20	±20
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
Product Status	Obsolete	Not For New Designs	Not For New Designs	Not For New Designs	Active	Active	Active	Active

Engineering Selection Recommendations

Active Product Alternatives (Recommended for New Designs):

The Infineon OptiMOS™ series devices (BSC025N03MSGATMA1, BSZ019N03LSATMA1, BSZ035N03LSGATMA1, BSZ050N03LSGATMA1) are classified as Active products and are suitable for new design implementations. These devices meet the 30V, 21A minimum requirements and offer superior on-state resistance characteristics.

BSC025N03MSGATMA1 provides the highest current rating (100A Tc) with the lowest on-state resistance (2.5 mOhm @ 30A, 10V), making it suitable for applications requiring maximum current handling and minimal conduction losses. This device is available in inventory (1042 pcs).

BSZ019N03LSATMA1 offers balanced performance with 40A (Tc) current rating and 1.9 mOhm on-state resistance @ 20A, 10V. Inventory availability is 10,100 pcs.

BSZ035N03LSGATMA1 and BSZ050N03LSGATMA1 provide intermediate performance options with 40A (Tc) ratings and on-state resistances of 3.5 mOhm and 5 mOhm respectively.

Not For New Designs Alternatives (Legacy Support Only):

Alpha & Omega Semiconductor AON7400A, AON7406, and AON7410 are classified as Not For New Designs but remain available for legacy system support. These devices meet the 30V voltage and 21A+ current requirements with varying performance characteristics.

Compliance and Certification:

All listed substitute parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. All devices operate across the -55°C to 150°C temperature range, matching the original part specification.

Frequently Asked Questions (FAQ)

Q1: Can AON7400A, AON7406, or AON7410 directly replace PSMN013-30LL,115 in existing designs?

A: Yes, from an electrical standpoint. All three Alpha & Omega devices meet the 30V Vdss and 21A+ Id requirements. However, these parts are classified as Not For New Designs. Footprint compatibility must be verified, as the AON devices use 8-PowerVDFN packages while the original uses 8-VDFN. PCB layout review is required to confirm pad compatibility.

Q2: What is the primary advantage of selecting BSC025N03MSGATMA1 over other substitutes?

A: BSC025N03MSGATMA1 offers the lowest on-state resistance (2.5 mOhm @ 30A, 10V) and highest current rating (100A Tc), resulting in minimal conduction losses and superior thermal performance. This makes it ideal for high-current applications where efficiency is critical. It is also an Active product suitable for new designs.

Q3: Are there package footprint differences between substitute options?

A: Yes. The PSMN013-30LL,115 uses an 8-VDFN package (3.3x3.3). Alpha & Omega substitutes (AON7400A, AON7406, AON7410) use 8-PowerVDFN packages. Infineon substitutes use 8-PowerTDFN packages. While all are 8-pin surface mount devices, pad layouts and thermal pad dimensions may differ. PCB design verification is required before implementation.

Q4: Which substitute offers the closest gate charge (Qg) performance to the original PSMN013-30LL,115?

A: AON7410 provides the closest match with 12 nC @ 10V, compared to the original 12.2 nC @ 10V. This minimizes changes to gate drive circuit design and switching characteristics.

Q5: Can I use BSZ086P03NS3EGATMA1 as a substitute?

A: No. BSZ086P03NS3EGATMA1 is a P-Channel device, while PSMN013-30LL,115 is N-Channel. These are functionally incompatible and cannot be interchanged.

Q6: What thermal considerations apply when substituting to higher-current-rated devices?

A: Higher current-rated devices typically feature lower on-state resistance, resulting in reduced conduction losses and lower junction temperatures under the same operating current. However, thermal management design must account for the specific power dissipation rating of the selected substitute. Verify that PCB thermal design (copper area, via placement, thermal vias) supports the device's maximum power dissipation specification.

Q7: Are all substitute parts available in the same packaging options?

A: No. Availability varies by manufacturer and part number. AON7400A is available in Tape & Reel (TR). AON7406 is available in Tape & Reel (TR). AON7410 is available in Cut Tape (CT) & Digi-Reel®. Infineon devices are available in Tape & Reel (TR) or Cut Tape (CT) & Digi-Reel® depending on the specific part number. Verify packaging availability with your supplier before design finalization.

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