PSMN011-30YL,115 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN011-30YL,115 is an N-Channel 30V 51A surface mount MOSFET manufactured by NXP USA Inc., utilizing TrenchMOS™ technology in the LFPAK56 (Power-SO8) package. This device is classified as Obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. The part operates across a wide temperature range (-55°C to 175°C) and delivers 49W maximum power dissipation, making it suitable for power switching applications requiring moderate current handling and thermal performance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	51	A
Rds On (Max) @ 15A, 10V	10.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	2.15	V
Gate Charge (Qg) @ 10V	14.8	nC
Input Capacitance (Ciss) @ 15V	726	pF
Power Dissipation (Max)	49	W
Operating Temperature Range	-55 to 175	°C
Package Type	LFPAK56, Power-SO8	SC-100, SOT-669
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the PSMN011-30YL,115 is determined by strict alignment of the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Surface Mount
Package Family: Must be compatible with LFPAK or equivalent power package (SC-100, SOT-669)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 51A at rated conditions
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature Range: Must support -55°C to 175°C minimum
RoHS and REACH Compliance: Must maintain ROHS3 Compliant and REACH Unaffected status

The substitute parts identified below satisfy these criteria while offering varying levels of current capacity, on-resistance, and thermal performance characteristics.

Parameter Comparison

Parameter	PSMN011-30YL,115 (Main)	HAT2116H-EL-E	HAT2168H-EL-E	PSMN9R1-30YL,115	SQJ840EP-T1_GE3
Manufacturer	NXP USA Inc.	Renesas Electronics	Renesas Electronics	Nexperia USA Inc.	Vishay Siliconix
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	51	30	30	57	30
Rds On (Max) @ 15A, 10V (mOhm)	10.7	8.2	7.9	9.1	9.3
Gate Charge (Qg) @ 10V (nC)	14.8	26	11	16.7	38
Input Capacitance (Ciss) (pF)	726 @ 15V	1650 @ 10V	1730 @ 10V	894 @ 15V	1900 @ 15V
Power Dissipation (Max) (W)	49	15	15	52	46
Operating Temperature (°C)	-55 to 175	to 150	to 150	-55 to 175	-55 to 175
Package	LFPAK56, Power-SO8	LFPAK	LFPAK	LFPAK56, Power-SO8	PowerPAK® SO-8
Product Status	Obsolete	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

PSMN9R1-30YL,115 (Nexperia USA Inc.)

This substitute provides the closest functional match to the PSMN011-30YL,115. It maintains identical voltage rating (30V), exceeds current capacity (57A vs. 51A), and operates across the same temperature range (-55°C to 175°C). The LFPAK56 package is mechanically and electrically compatible. On-resistance (9.1 mOhm) is superior to the main part. However, this device carries "Not For New Designs" status, limiting its suitability for long-term production. Inventory availability is 3,866 units.

HAT2168H-EL-E (Renesas Electronics Corporation)

This part is recommended for applications where current requirements can be reduced to 30A. It offers superior on-resistance (7.9 mOhm) and lower gate charge (11 nC), reducing switching losses. The LFPAK package maintains compatibility with the original footprint. Product status is Active, ensuring long-term availability. Operating temperature maximum is 150°C, which may be limiting in high-temperature environments. Inventory: 3,818 units.

HAT2116H-EL-E (Renesas Electronics Corporation)

Functionally equivalent to HAT2168H-EL-E with 30A current rating and 30V voltage rating. On-resistance is 8.2 mOhm. Gate charge is higher at 26 nC. Active product status supports new designs. Temperature range limited to 150°C. Inventory: 57,800 units (highest availability).

SQJ840EP-T1_GE3 (Vishay Siliconix)

This substitute operates at 30V and 30A with 9.3 mOhm on-resistance. The PowerPAK® SO-8 package differs from LFPAK but maintains SC-100/SOT-669 compatibility. Full temperature range support (-55°C to 175°C) and Active product status are advantageous. AEC-Q101 automotive qualification is available. Gate charge is elevated at 38 nC. Inventory: 1,019 units.

Frequently Asked Questions (FAQ)

Q1: Can HAT2116H-EL-E or HAT2168H-EL-E replace PSMN011-30YL,115 in all applications?

A: These Renesas parts are suitable only for applications where continuous drain current does not exceed 30A. The PSMN011-30YL,115 is rated for 51A, so substitution is valid only if circuit design allows operation at reduced current levels. Verify thermal performance, as power dissipation is limited to 15W versus 49W in the original part.

Q2: What is the difference between PSMN9R1-30YL,115 and PSMN011-30YL,115?

A: PSMN9R1-30YL,115 provides higher current capacity (57A vs. 51A) and lower on-resistance (9.1 mOhm vs. 10.7 mOhm). Both use LFPAK56 packaging and TrenchMOS™ technology. The primary limitation is that PSMN9R1-30YL,115 carries "Not For New Designs" status, making it unsuitable for new product development.

Q3: Are the LFPAK and PowerPAK® SO-8 packages pin-compatible?

A: Both packages use SC-100 and SOT-669 designations and are mechanically compatible with standard LFPAK footprints. However, verify PCB layout and thermal pad design with the specific package datasheet before substitution, as internal lead frame geometry may differ.

Q4: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge (e.g., 38 nC in SQJ840EP-T1_GE3 vs. 14.8 nC in PSMN011-30YL,115) increases switching losses and may require higher gate drive current. This affects efficiency and thermal performance in high-frequency switching applications.

Q5: Why do some substitutes have lower maximum operating temperature?

A: HAT2116H-EL-E and HAT2168H-EL-E are rated to 150°C maximum junction temperature, compared to 175°C for the original part. Applications requiring operation above 150°C must use PSMN9R1-30YL,115 or SQJ840EP-T1_GE3, which support the full -55°C to 175°C range.

Q6: Is RoHS and REACH compliance maintained across all substitutes?

A: Yes. All substitute parts listed are ROHS3 Compliant and REACH Unaffected, matching the compliance status of PSMN011-30YL,115.

Q7: Which substitute offers the best on-resistance performance?

A: HAT2168H-EL-E provides the lowest on-resistance at 7.9 mOhm @ 15A, 10V, followed by HAT2116H-EL-E at 8.2 mOhm. Lower on-resistance reduces conduction losses and heat generation during operation.

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