PSMN011-100YSFX N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN011-100YSFX is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 100V drain-to-source voltage with a continuous drain current of 79.5A at 25°C. The device is housed in an LFPAK56 (Power-SO8) surface mount package and is designed for high-power switching applications requiring efficient thermal management.

This part carries an Obsolete product status. Identification of equivalent and substitute components is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

PSMN011-100YSFX

Nexperia USA Inc.In Stock: 2292PSMN011-100YSFX Datasheet

Current PartRFQ

PSMN5R5-100YSFX

Nexperia USA Inc.In Stock: 2315PSMN5R5-100YSFX Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PSMN011-100YSFX is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same 100V drain-to-source voltage (Vdss) rating to ensure safe operation within the original circuit design envelope.

Package Compatibility: The substitute must utilize the identical LFPAK56 (Power-SO8) surface mount package with SC-100 / SOT-669 designation to ensure mechanical fit and thermal interface compatibility on the printed circuit board.

Gate Drive Compatibility: The substitute must operate with the same gate drive voltage range (7V to 10V for maximum Rds On specification) to maintain compatibility with existing gate driver circuits.

Thermal and Electrical Performance: While the substitute may exhibit different absolute performance characteristics (such as higher continuous drain current or lower on-state resistance), it must be capable of operating within the same temperature range (-55°C to 175°C) and maintain electrical stability under the specified operating conditions.

Compliance and Regulatory Status: The substitute must maintain equivalent RoHS3 compliance, REACH status, and moisture sensitivity level (MSL 1) to ensure manufacturing and environmental compatibility.

Parameter Comparison

Engineering Selection Recommendations

PSMN5R5-100YSFX as Primary Substitute

The PSMN5R5-100YSFX is the direct substitute for the PSMN011-100YSFX. Both devices are manufactured by Nexperia USA Inc. and share identical voltage ratings (100V Vdss), gate drive specifications (7V to 10V), and package geometry (LFPAK56 / Power-SO8 / SC-100 / SOT-669).

The PSMN5R5-100YSFX carries Active product status, ensuring ongoing availability and manufacturing support. This part maintains full compliance with RoHS3 and REACH regulatory requirements, with identical moisture sensitivity level (MSL 1) and thermal operating range (-55°C to 175°C).

Performance Characteristics

The PSMN5R5-100YSFX exhibits enhanced electrical performance compared to the obsolete PSMN011-100YSFX:

Continuous drain current increases from 79.5A to 115A at 25°C, providing greater current handling capacity. On-state resistance (Rds On) decreases from 10.9 mOhm to 5.5 mOhm, resulting in reduced conduction losses and improved efficiency. Maximum power dissipation increases from 152W to 238W, enabling higher thermal headroom in power-intensive applications.

Gate charge increases from 34.3 nC to 95 nC, and input capacitance increases from 2258 pF to 6238 pF. These parameters affect gate drive circuit design and switching speed characteristics and must be evaluated within the context of the specific application's gate driver capabilities.

Compliance and Supply Chain

The PSMN5R5-100YSFX maintains equivalent regulatory compliance (RoHS3, REACH Unaffected) and identical moisture sensitivity classification, eliminating compliance-related substitution barriers. Current inventory availability (2217 pieces) supports immediate procurement for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the PSMN5R5-100YSFX be used as a direct replacement for the PSMN011-100YSFX in existing circuit designs?

A: Yes. Both devices share identical voltage ratings (100V Vdss), gate drive voltage specifications (7V to 10V), and package geometry (LFPAK56 / Power-SO8). The PSMN5R5-100YSFX is electrically and mechanically compatible for direct substitution. However, the increased gate charge (95 nC vs. 34.3 nC) and input capacitance (6238 pF vs. 2258 pF) may require evaluation of gate driver circuit performance, particularly in high-frequency switching applications.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (115A vs. 79.5A), on-state resistance (5.5 mOhm vs. 10.9 mOhm), power dissipation capability (238W vs. 152W), gate charge (95 nC vs. 34.3 nC), and input capacitance (6238 pF vs. 2258 pF). The PSMN5R5-100YSFX provides superior current handling and lower conduction losses, while the PSMN011-100YSFX exhibits lower gate charge and input capacitance. Product status differs: PSMN011-100YSFX is Obsolete; PSMN5R5-100YSFX is Active.

Q: Are there any package or pinout differences between these parts?

A: No. Both devices utilize the identical LFPAK56 (Power-SO8) surface mount package with SC-100 / SOT-669 designation. Pinout and mechanical dimensions are identical, ensuring direct board-level compatibility without layout modifications.

Q: Do these parts have the same regulatory compliance status?

A: Yes. Both the PSMN011-100YSFX and PSMN5R5-100YSFX are RoHS3 Compliant, REACH Unaffected, and classified as MSL 1 (Unlimited moisture sensitivity level). Regulatory compliance is equivalent between the two parts.

Q: What is the impact of increased gate charge on circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The PSMN5R5-100YSFX requires 95 nC compared to 34.3 nC for the PSMN011-100YSFX. Higher gate charge increases gate driver current requirements and may extend switching transition times. Gate driver circuits must be evaluated to confirm adequate current sourcing capability at the intended switching frequency.

Q: Can the PSMN011-100YSFX be used in place of the PSMN5R5-100YSFX?

A: Reverse substitution is not recommended. The PSMN011-100YSFX carries Obsolete product status and exhibits lower current rating (79.5A vs. 115A) and reduced power dissipation capability (152W vs. 238W). Applications designed for the PSMN5R5-100YSFX may exceed the thermal and electrical limits of the obsolete part.

Q: What is the significance of the lower on-state resistance in the PSMN5R5-100YSFX?

A: Lower on-state resistance (Rds On) reduces conduction losses during the on-state, resulting in decreased power dissipation and improved overall circuit efficiency. The PSMN5R5-100YSFX exhibits 5.5 mOhm compared to 10.9 mOhm, approximately 50% lower resistance. This improvement is particularly beneficial in high-current switching applications where conduction losses dominate thermal budget calculations.

Q: Are both parts suitable for high-frequency switching applications?

A: Both parts are suitable for high-frequency switching. However, the increased gate charge and input capacitance of the PSMN5R5-100YSFX may result in longer switching transition times compared to the PSMN011-100YSFX. Gate driver circuit design and switching frequency must be evaluated to ensure the selected part meets application timing requirements.