PSMN010-55D,118 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN010-55D,118 is an N-Channel 55V 75A MOSFET manufactured by NXP USA Inc. in DPAK surface mount packaging. This device is classified as Obsolete, making identification of functionally equivalent substitute parts essential for design continuity and procurement planning. The TrenchMOS™ series technology provides efficient switching performance in power conversion applications requiring 55V drain-source voltage ratings and high continuous drain current capability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
Rds On (Max) @ 25A, 10V	10.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	2	V (Max)
Gate Charge (Qg) @ 5V	55	nC (Max)
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 DPAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the PSMN010-55D,118 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 55V or higher
Continuous Drain Current (Id): 75A or higher at Tc
On-State Resistance (Rds On): Equal to or lower than 10.5 mOhm @ 10V
Package Type: TO-252-3 DPAK (identical mechanical footprint)
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor
Mounting: Surface Mount

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 2V to 4V range
Operating Temperature: -55°C to 175°C minimum
Regulatory Compliance: ROHS3 Compliant, REACH Unaffected

Substitute parts must satisfy all primary criteria to ensure direct functional replacement without circuit redesign. Secondary parameters confirm operational compatibility within existing thermal and gate drive specifications.

Parameter Comparison

Parameter	PSMN010-55D,118 (NXP)	DMTH6009LK3Q-13 (Diodes)	IRFR2405TRLPBF (Infineon)	IRFR2405TRPBF (Infineon)	STD60NF55LT4 (STMicro)	STD65N55F3 (STMicro)	STD70N6F3 (STMicro)
Vdss (V)	55	60	55	55	55	55	60
Id @ Tc (A)	75	59	56	56	60	80	70
Rds On (Max) @ 10V (mOhm)	10.5	10	16	16	15	8.5	10.5
Vgs(th) (Max) (V)	2	2	4	4	2	4	4
Qg @ Vgs (nC)	55 @ 5V	33.5 @ 10V	110 @ 10V	110 @ 10V	56 @ 5V	45 @ 10V	35 @ 10V
Power Dissipation (Max) (W)	125	60	110	110	100	110	110
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 DPAK	TO-252-3	TO-252AA (DPAK)	TO-252AA (DPAK)	DPAK	DPAK	DPAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute (Highest Compatibility):

STD65N55F3 (STMicroelectronics) is the optimal substitute for PSMN010-55D,118. This device matches the 55V Vdss rating, exceeds the 75A continuous drain current requirement with 80A capability, and provides superior on-state resistance at 8.5 mOhm. The STripFET™ series technology ensures compatible gate drive characteristics. Product status is Active with full ROHS3 compliance and REACH unaffected certification. Inventory availability is 15,165 pieces.

Secondary Substitutes (Functional Equivalents):

STD60NF55LT4 (STMicroelectronics) provides 55V Vdss with 60A continuous drain current and 15 mOhm Rds On. This device is suitable for applications where the 75A current requirement can be reduced to 60A. Active product status with 17,810 pieces in stock.

DMTH6009LK3Q-13 (Diodes Incorporated) offers 60V Vdss with 59A continuous drain current and 10 mOhm Rds On. The higher voltage rating provides additional design margin. Active product status with 2,900 pieces available.

Alternative Substitutes (Reduced Current Capability):

IRFR2405TRLPBF and IRFR2405TRPBF (Infineon Technologies) both provide 55V Vdss with 56A continuous drain current. These HEXFET® series devices have higher gate charge (110 nC) and higher Rds On (16 mOhm), making them suitable only for applications tolerating reduced current capacity. Both are Active with high inventory (6,200 and 35,200 pieces respectively).

STD70N6F3 (STMicroelectronics) is Obsolete status, limiting long-term procurement viability despite 70A current capability at 60V Vdss.

Frequently Asked Questions (FAQ)

Q: Can DMTH6009LK3Q-13 directly replace PSMN010-55D,118 in all applications?

A: DMTH6009LK3Q-13 is functionally compatible for applications where 59A continuous drain current is acceptable. The 60V Vdss rating exceeds the 55V requirement. However, the lower power dissipation rating (60W vs. 125W) must be verified against thermal design requirements. Package compatibility is confirmed (TO-252-3 DPAK).

Q: What is the primary difference between STD65N55F3 and IRFR2405TRLPBF?

A: STD65N55F3 provides 80A continuous drain current with 8.5 mOhm Rds On, while IRFR2405TRLPBF provides 56A with 16 mOhm Rds On. STD65N55F3 is the superior choice for high-current applications. Both share identical 55V Vdss and DPAK packaging.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and REACH unaffected, matching the regulatory status of PSMN010-55D,118.

Q: Does gate threshold voltage variation affect substitutability?

A: Gate threshold voltage ranges from 2V to 4V across substitute options. Devices with 2V Vgs(th) (PSMN010-55D,118, DMTH6009LK3Q-13, STD60NF55LT4) are directly compatible with existing gate drive circuits. Devices with 4V Vgs(th) (IRFR2405 series, STD65N55F3, STD70N6F3) require verification that gate drive voltage is sufficient for full enhancement.

Q: Which substitute has the best on-state resistance performance?

A: STD65N55F3 provides the lowest Rds On at 8.5 mOhm @ 32A, 10V, resulting in the lowest conduction losses. DMTH6009LK3Q-13 provides 10 mOhm, matching the original specification.

Q: Can I use STD70N6F3 as a substitute despite Obsolete status?

A: STD70N6F3 is functionally compatible but carries Obsolete product status, creating long-term procurement risk. Active alternatives (STD65N55F3, STD60NF55LT4) are recommended for new designs and ongoing production.

Q: What is the impact of higher gate charge on circuit design?

A: IRFR2405 series devices have 110 nC gate charge versus 55 nC for PSMN010-55D,118. Higher gate charge increases gate drive power dissipation and switching time. Verify gate driver capability before substitution.

Q: Are all substitutes available in identical packaging?

A: Yes. All substitute parts use TO-252-3 DPAK surface mount packaging with identical mechanical footprint, enabling direct PCB placement without layout modification.

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