Equivalent & Substitute Parts Reference – PSMN004-60P,127

Part Overview

PSMN004-60P,127 is a TrenchMOS™ N-Channel MOSFET with a drain-to-source voltage rating of 60 V and a continuous drain current of 75A (Tc). Supplied in a TO-220AB through-hole package, the device is classified as obsolete by NXP USA Inc. For ongoing designs or maintenance, locating direct equivalents and substitute MOSFETs with similar electrical and mechanical properties is required to ensure uninterrupted production and repair capability.

Key Parameters

Parameter	Value
Manufacturer Part Number	PSMN004-60P,127
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Rds On (Max) @ Id, Vgs	3.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	168 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	8300 pF @ 25 V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Obsolete

Substitute Part Grouping Explanation

Substitute MOSFETs for PSMN004-60P,127 are selected exclusively based on the following parameters: FET type (N-Channel), technology (MOSFET Metal Oxide), drain-to-source voltage rating (60 V), continuous drain current (Id), maximum Rds On, gate charge (Qg), input capacitance (Ciss), operating temperature, mounting type (Through Hole), package/case (TO-220-3), and compliance certifications (RoHS, REACH, MSL). Only those matching these criteria are listed as direct equivalents.

Parameter Comparison

Part Number	Manufacturer	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max)	Operating Temperature	Mounting Type	Package / Case	RoHS Status	REACH Status	MSL	Part Status
PSMN004-60P,127	NXP USA Inc.	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	3.6mOhm @ 25A, 10V	4V @ 1mA	168 nC @ 10 V	8300 pF @ 25 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)	Obsolete
AOT264L	Alpha & Omega Semiconductor Inc.	N-Channel	MOSFET (Metal Oxide)	60 V	140A (Tc)	3.2mOhm @ 20A, 10V	3.2V @ 250µA	94 nC @ 10 V	8400 pF @ 30 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)	Active
AOT266L	Alpha & Omega Semiconductor Inc.	N-Channel	MOSFET (Metal Oxide)	60 V	140A (Tc)	3.5mOhm @ 20A, 10V	3.2V @ 250µA	90 nC @ 10 V	5650 pF @ 30 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)	Active
FDP038AN06A0	onsemi	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	3.8mOhm @ 80A, 10V	4V @ 250µA	124 nC @ 10 V	6400 pF @ 25 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	Not Applicable	Active
IPP029N06NAKSA1	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	2.9mOhm @ 100A, 10V	2.8V @ 75µA	56 nC @ 10 V	4100 pF @ 30 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)	Active
IRFB3206PBF	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	3mOhm @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	6540 pF @ 50 V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)	Active

Engineering Selection Recommendations

Transitioning from obsolete PSMN004-60P,127 devices to substitutes should be based on part status, RoHS compliance, REACH status, and moisture sensitivity level (MSL). All listed substitutes are marked as active and maintain consistency in environmental certifications, with MSLs of 1 (Unlimited) or Not Applicable. No further selection criteria have been provided.

Frequently Asked Questions (FAQ)

Q1: Which key electrical parameters must match for a MOSFET substitute?
A1: Substitute MOSFETs must match the following: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate charge (Qg), and input capacitance (Ciss).

Q2: Is package compatibility required for direct substitution?
A2: Yes. Substitute parts must be in the through-hole TO-220-3 case, consistent with the original part.

Q3: What environmental certifications should be considered?
A3: RoHS3 compliance, REACH unaffected status, and appropriate moisture sensitivity level (MSL) must be met.

Q4: Is operating temperature a critical matching parameter?
A4: Yes. Substitute MOSFETs must cover the same operating temperature range as the original part.

Q5: Are all substitutes listed suitable for designs that originally use PSMN004-60P,127?
A5: All substitutes meet the provided parameters for electrical performance, mounting, and compliance. Only parameters given in the input are used for suitability.

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