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PR3006G-T Equivalent & Substitute Parts
Part Overview
The PR3006G-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 800 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The diode features fast recovery characteristics with a reverse recovery time of 500 ns, suitable for standard rectification circuits requiring moderate switching speeds.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 800 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A | V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 500 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 800 V |
| Package / Case | DO-201AD, Axial | - |
| Mounting Type | Through Hole | - |
| Operating Temperature - Junction | -65°C ~ 150°C | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the PR3006G-T is determined by matching the following critical electrical and mechanical parameters:
Mandatory Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3 A
- Package / Case: DO-201AD, Axial (or compatible through-hole axial package)
- Mounting Type: Through Hole
Acceptable Variation Parameters:
- Voltage - Forward (Vf) (Max) @ If: Range 1.0 V to 1.7 V @ 3 A
- Reverse Recovery Time (trr): 75 ns to 7.5 µs
- Current - Reverse Leakage @ Vr: 1 µA to 10 µA @ 800 V
- Operating Temperature - Junction: Minimum -65°C to -55°C; Maximum 150°C to 175°C
- Technology: Standard or Avalanche
- Product Status: Active or Not For New Designs
Substitute parts must maintain DO-201AD package compatibility or equivalent axial through-hole configuration to ensure direct mechanical and electrical interchangeability in existing circuit designs.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [V] | trr [ns] | Ir @ Vr [µA] | Package | Product Status | Temp Range [°C] |
|---|---|---|---|---|---|---|---|---|---|
| PR3006G-T | Diodes Incorporated | 800 | 3 | 1.3 @ 3A | 500 | 5 @ 800V | DO-201AD | Obsolete | -65 ~ 150 |
| RGP30K-E3/54 | Vishay General Semiconductor | 800 | 3 | 1.3 @ 3A | 500 | 5 @ 800V | DO-201AD | Active | -65 ~ 175 |
| 1N5407G | Taiwan Semiconductor Corporation | 800 | 3 | 1.0 @ 3A | >500 | 5 @ 800V | DO-201AD | Active | -55 ~ 150 |
| 1N5407RLG | onsemi | 800 | 3 | 1.0 @ 3A | >500 | 10 @ 800V | DO-201AA / DO-27 | Not For New Designs | -65 ~ 150 |
| 1N5627-TR | Vishay General Semiconductor | 800 | 3 | 1.0 @ 3A | >500 | 1 @ 800V | SOD-64 | Active | -55 ~ 175 |
| FR306GP-AP | Micro Commercial Co | 800 | 3 | 1.3 @ 3A | 500 | 5 @ 800V | DO-201AD | Active | -55 ~ 150 |
| GP30K-E3/54 | Vishay General Semiconductor | 800 | 3 | 1.1 @ 3A | >500 | 5 @ 800V | DO-201AD | Active | -65 ~ 175 |
| UF5407-E3/54 | Vishay General Semiconductor | 800 | 3 | 1.7 @ 3A | 75 | 10 @ 800V | DO-201AD | Active | -55 ~ 150 |
| FR306T/R | EIC SEMICONDUCTOR INC. | 800 | 3 | 1.3 @ 3A | 500 | 10 @ 800V | DO-201AD | Active | -65 ~ 150 |
Engineering Selection Recommendations
Primary Substitutes (Highest Compatibility):
RGP30K-E3/54 and FR306GP-AP are the preferred direct substitutes for the PR3006G-T. Both maintain identical electrical specifications (800 V, 3 A, 1.3 V forward voltage, 500 ns recovery time) and DO-201AD package configuration. RGP30K-E3/54 offers extended operating temperature range (-65°C to 175°C) and active product status. FR306GP-AP provides equivalent performance with active status and standard temperature range (-55°C to 150°C).
Secondary Substitutes (Acceptable with Design Verification):
GP30K-E3/54 and UF5407-E3/54 are functionally compatible alternatives. GP30K-E3/54 features lower forward voltage (1.1 V @ 3 A) and extended temperature range (-65°C to 175°C), suitable for applications prioritizing efficiency. UF5407-E3/54 offers significantly faster recovery time (75 ns) with higher forward voltage (1.7 V @ 3 A), appropriate for high-frequency switching applications.
Alternative Package Consideration:
1N5407G (Taiwan Semiconductor Corporation) provides electrical equivalence with active product status but operates within a narrower temperature range (-55°C to 150°C). This part is suitable for standard ambient temperature applications.
Not Recommended for New Designs:
1N5407RLG carries "Not For New Designs" status and should be used only for legacy system maintenance where direct replacement is required.
Package Deviation:
1N5627-TR uses SOD-64 package instead of DO-201AD, requiring mechanical redesign and is not a direct drop-in replacement. This part is suitable only when circuit board layout modifications are acceptable.
Frequently Asked Questions (FAQ)
Q: Can I use RGP30K-E3/54 as a direct replacement for PR3006G-T?
A: Yes. RGP30K-E3/54 matches all critical electrical parameters (800 V, 3 A, 1.3 V forward voltage, 500 ns recovery time) and uses the identical DO-201AD axial through-hole package. The extended operating temperature range (-65°C to 175°C) provides additional margin compared to the original part's -65°C to 150°C range.
Q: What is the difference between fast recovery and standard recovery diodes in this group?
A: Fast recovery diodes (PR3006G-T, RGP30K-E3/54, FR306GP-AP, UF5407-E3/54, FR306T/R) have reverse recovery times ≤ 500 ns, suitable for moderate-frequency switching applications. Standard recovery diodes (1N5407G, 1N5407RLG, 1N5627-TR, GP30K-E3/54) have recovery times > 500 ns, appropriate for lower-frequency rectification circuits. Selection depends on circuit switching frequency requirements.
Q: Why does UF5407-E3/54 have a higher forward voltage (1.7 V) compared to other substitutes?
A: UF5407-E3/54 achieves significantly faster recovery time (75 ns) through different semiconductor design and doping profile, which results in higher forward voltage drop. This trade-off is acceptable in applications where fast switching is critical and power dissipation is not a limiting factor.
Q: Is 1N5627-TR compatible with my existing circuit board?
A: 1N5627-TR uses SOD-64 package instead of DO-201AD. While electrically equivalent, the different package geometry requires circuit board layout modification. Direct mechanical substitution is not possible without redesign.
Q: Can I use a part with "Not For New Designs" status?
A: 1N5407RLG carries this designation and should be used only for maintenance and repair of existing systems where the original part is no longer available. For new circuit designs, select from parts with "Active" product status.
Q: What is the significance of operating temperature range differences?
A: Parts with extended upper temperature limits (-65°C to 175°C) provide additional thermal margin in high-ambient or high-power applications. Parts with standard range (-55°C to 150°C) are suitable for typical industrial and consumer applications. Selection depends on the specific thermal environment of the application.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed carry RoHS3 compliance certification, meeting environmental and hazardous substance restrictions for electronic components.
Q: What packaging format is specified for these diodes?
A: All primary substitutes use DO-201AD axial through-hole package with Cut Tape (CT) or standard packaging. This package format ensures compatibility with existing through-hole circuit board designs and manual or automated assembly processes.
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