PR1003-T Equivalent & Substitute Parts

Part Overview

The PR1003-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The PR1003-T features fast recovery characteristics with a reverse recovery time of 150 ns, suitable for standard rectification circuits requiring moderate switching speeds.

Substiute Parts

PR1003-T
Diodes IncorporatedIn Stock: 23817PR1003-T Datasheet
PR1003-T
Current Part
1N4935G-T
Diodes IncorporatedIn Stock: 11281N4935G-T Datasheet
1N4935G-T
MFR Recommended
1N4935-T
Diodes IncorporatedIn Stock: 54791N4935-T Datasheet
1N4935-T
Parametric Equivalent
1N3611
Microchip TechnologyIn Stock: 15311N3611 Datasheet
1N3611
MFR Recommended
1N3611GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 200961N3611GP-E3/54 Datasheet
1N3611GP-E3/54
MFR Recommended
1N4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 189701N4003-E3/54 Datasheet
1N4003-E3/54
MFR Recommended
1N4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 228571N4003-E3/73 Datasheet
1N4003-E3/73
MFR Recommended
1N4003-TP
Micro Commercial CoIn Stock: 342541N4003-TP Datasheet
1N4003-TP
MFR Recommended
1N4003G
Taiwan Semiconductor CorporationIn Stock: 279541N4003G Datasheet
1N4003G
MFR Recommended
1N4003GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 67121N4003GP-E3/54 Datasheet
1N4003GP-E3/54
MFR Recommended
1N4003GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 66831N4003GP-E3/73 Datasheet
1N4003GP-E3/73
MFR Recommended
1N4003RLG
onsemiIn Stock: 16041N4003RLG Datasheet
1N4003RLG
MFR Recommended
1N4383GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 87001N4383GP-E3/54 Datasheet
1N4383GP-E3/54
MFR Recommended
1N4935G
Taiwan Semiconductor CorporationIn Stock: 8961N4935G Datasheet
1N4935G
MFR Recommended
1N4942
Microchip TechnologyIn Stock: 15211N4942 Datasheet
1N4942
MFR Recommended
1N5059GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 22851N5059GP-E3/54 Datasheet
1N5059GP-E3/54
MFR Recommended
1N5614
Microchip TechnologyIn Stock: 12661N5614 Datasheet
1N5614
MFR Recommended
1N5615
Semtech CorporationIn Stock: 17051N5615 Datasheet
1N5615
MFR Recommended
1N5615GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 113041N5615GP-E3/54 Datasheet
1N5615GP-E3/54
MFR Recommended
EGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6028EGP10D-E3/54 Datasheet
EGP10D-E3/54
MFR Recommended
EGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 3041EGP10D-E3/73 Datasheet
EGP10D-E3/73
MFR Recommended
GP10-4003E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 880GP10-4003E-E3/54 Datasheet
GP10-4003E-E3/54
MFR Recommended
GPP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1140GPP10D-E3/54 Datasheet
GPP10D-E3/54
MFR Recommended
MUR120G
onsemiIn Stock: 46248MUR120G Datasheet
MUR120G
MFR Recommended
MUR120RLG
onsemiIn Stock: 109565MUR120RLG Datasheet
MUR120RLG
MFR Recommended
RGP10D
Fairchild SemiconductorIn Stock: 17142RGP10D Datasheet
RGP10D
MFR Recommended
RGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1434RGP10D-E3/54 Datasheet
RGP10D-E3/54
MFR Recommended
RGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8191RGP10D-E3/73 Datasheet
RGP10D-E3/73
MFR Recommended
RMPG06D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 926RMPG06D-E3/54 Datasheet
RMPG06D-E3/54
MFR Recommended
SF14G B0G
Taiwan Semiconductor CorporationIn Stock: 802SF14G B0G Datasheet
SF14G B0G
MFR Recommended
UF4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1451UF4003-E3/54 Datasheet
UF4003-E3/54
MFR Recommended
UF4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2185UF4003-E3/73 Datasheet
UF4003-E3/73
MFR Recommended
UG1D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2361UG1D-E3/54 Datasheet
UG1D-E3/54
MFR Recommended
UG1D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11450UG1D-E3/73 Datasheet
UG1D-E3/73
MFR Recommended
1N4935RLG
onsemiIn Stock: 154941N4935RLG Datasheet
1N4935RLG
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65°C ~ 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the PR1003-T is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial configurations

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.2 V @ 1 A
  • Current - Reverse Leakage @ Vr: Must not exceed 5 µA @ 200 V
  • Operating Temperature - Junction: Must support minimum -65°C to 150°C range
  • RoHS Compliance: ROHS3 Compliant preferred for new designs

Substitute parts are grouped into two categories: MFR Recommended substitutes (active product status, direct electrical equivalence) and Parametric Equivalent substitutes (active status, matching all critical electrical parameters). Parts with obsolete or "Not For New Designs" status are identified separately.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ 1A Speed trr (ns) Ir @ Vr Package Temp Range Status RoHS
PR1003-T Diodes Inc. 200 V 1 A 1.2 V Fast Recovery ≤ 500 ns 150 5 µA DO-41 -65 to 150°C Obsolete ROHS3
1N4935G-T Diodes Inc. 200 V 1 A 1.2 V Fast Recovery ≤ 500 ns 200 5 µA DO-41 -65 to 150°C Active ROHS3
1N4935-T Diodes Inc. 200 V 1 A 1.2 V Fast Recovery ≤ 500 ns 200 5 µA DO-41 -65 to 150°C Active ROHS3
1N3611 Microchip Tech. 200 V 1 A 1.1 V Standard Recovery > 500 ns 1 µA Axial -65 to 175°C Active Non-compliant
1N3611GP-E3/54 Vishay 200 V 1 A 1.0 V Standard Recovery > 500 ns 2000 1 µA DO-204AL -65 to 175°C Active ROHS3
1N4003-E3/54 Vishay 200 V 1 A 1.1 V Standard Recovery > 500 ns 5 µA DO-204AL -55 to 150°C Active ROHS3
1N4003-E3/73 Vishay 200 V 1 A 1.1 V Standard Recovery > 500 ns 5 µA DO-204AL -55 to 150°C Active ROHS3
1N4003-TP Micro Commercial Co 200 V 1 A 1.1 V Standard Recovery > 500 ns 2000 5 µA DO-41 -55 to 150°C Not For New Designs ROHS3
1N4003G Taiwan Semiconductor 200 V 1 A 1.0 V Standard Recovery > 500 ns 5 µA DO-204AL -55 to 150°C Active ROHS3
1N4003GP-E3/54 Vishay 200 V 1 A 1.1 V Standard Recovery > 500 ns 2000 5 µA DO-204AL -65 to 175°C Active ROHS3
1N4003GP-E3/73 Vishay 200 V 1 A 1.1 V Standard Recovery > 500 ns 2000 5 µA DO-204AL -65 to 175°C Active ROHS3

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs):

The 1N4935G-T and 1N4935-T from Diodes Incorporated are the preferred direct replacements for the obsolete PR1003-T. Both parts maintain identical electrical specifications including 200 V reverse voltage, 1 A average rectified current, 1.2 V forward voltage drop, and fast recovery characteristics. Both are active products with ROHS3 compliance. The 1N4935G-T is supplied in Tape & Reel packaging, while the 1N4935-T is supplied in Cut Tape packaging. The primary difference between these substitutes and the original PR1003-T is a marginal increase in reverse recovery time from 150 ns to 200 ns, which remains within fast recovery classification (≤ 500 ns).

Secondary Substitutes (Parametric Equivalents):

The 1N3611GP-E3/54 and 1N4003 series parts (1N4003-E3/54, 1N4003-E3/73, 1N4003G, 1N4003GP-E3/54, 1N4003GP-E3/73) provide parametric equivalence at 200 V, 1 A ratings with ROHS3 compliance and active product status. These parts employ standard recovery technology (> 500 ns) rather than fast recovery, resulting in significantly longer reverse recovery times (2000 ns typical). This characteristic difference makes them suitable for lower-frequency rectification applications but not for circuits requiring fast switching performance. The 1N3611GP-E3/54 offers extended operating temperature range (-65°C to 175°C) and lower reverse leakage current (1 µA vs. 5 µA).

Not Recommended for New Designs:

The 1N4003-TP from Micro Commercial Co carries "Not For New Designs" status and should not be selected for new product development, despite meeting electrical specifications.

Compliance Considerations:

All recommended substitutes maintain ROHS3 compliance. The 1N3611 from Microchip Technology is RoHS non-compliant and should be avoided in applications requiring regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the 1N4935G-T directly replace the PR1003-T in existing designs?

A: Yes. The 1N4935G-T is electrically equivalent to the PR1003-T across all critical parameters: 200 V reverse voltage, 1 A average rectified current, 1.2 V forward voltage drop, and fast recovery operation. The reverse recovery time increases from 150 ns to 200 ns, but both values fall within the fast recovery classification (≤ 500 ns). Physical mounting is identical (DO-41 through-hole package).

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns and are designed for higher-frequency switching applications. Standard recovery diodes have reverse recovery times > 500 ns and are suitable for lower-frequency rectification. The PR1003-T and its primary substitutes (1N4935G-T, 1N4935-T) are fast recovery devices. The 1N4003 series and 1N3611 series are standard recovery devices with significantly longer recovery times (2000 ns typical).

Q: Can I use a standard recovery diode like the 1N4003 instead of the fast recovery PR1003-T?

A: Standard recovery diodes can be used in applications where switching frequency is low enough that the longer recovery time does not cause circuit problems. However, in high-frequency switching circuits, standard recovery diodes may introduce excessive switching losses and noise. The choice depends on the specific circuit requirements and operating frequency.

Q: What packaging options are available for substitutes?

A: The primary substitutes are available in different packaging formats: 1N4935G-T (Tape & Reel), 1N4935-T (Cut Tape), and various 1N4003 and 1N3611 variants in Cut Tape or Bulk packaging. All maintain the same DO-41 or DO-204AL through-hole physical form factor. Packaging selection depends on assembly process requirements (manual insertion vs. automated tape-fed equipment).

Q: Are all substitute parts RoHS compliant?

A: Most recommended substitutes are ROHS3 compliant. The exception is the 1N3611 from Microchip Technology, which is RoHS non-compliant. For applications requiring regulatory compliance with RoHS directives, select only parts marked ROHS3 Compliant.

Q: What is the temperature operating range difference between substitutes?

A: The PR1003-T operates from -65°C to 150°C. The 1N4935 series maintains this range. The 1N3611 and 1N4003GP variants extend the upper limit to 175°C, providing wider temperature margin. The 1N4003 series (non-GP variants) operates from -55°C to 150°C, with a reduced lower temperature limit.

Q: Why does the 1N4003-TP show "Not For New Designs" status?

A: Parts marked "Not For New Designs" are typically in end-of-life phases or have been superseded by improved alternatives. While the 1N4003-TP meets electrical specifications, it should not be selected for new product development. Use active-status alternatives such as 1N4003-E3/54, 1N4003-E3/73, or 1N4003G instead.

Q: What is the significance of reverse leakage current differences?

A: The PR1003-T and 1N4935 series specify 5 µA reverse leakage at 200 V. The 1N3611 series specifies 1 µA, indicating lower leakage. In most applications, this difference is negligible. However, in high-impedance circuits or precision analog applications, lower leakage current may be advantageous.

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