PN918_D74Z Equivalent & Substitute Parts

Part Overview

The PN918_D74Z is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for radio frequency applications. This component operates at a transition frequency of 600MHz with a maximum collector-emitter breakdown voltage of 15V and maximum power dissipation of 350mW. The device is packaged in a through-hole TO-92-3 configuration.

The PN918_D74Z is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	15	V
Frequency - Transition	600	MHz
Noise Figure (Typ @ f)	6	dB @ 60MHz
Gain	15	dB
Power - Max	350	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 3mA, 1V	—
Current - Collector (Ic) (Max)	50	mA
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PN918_D74Z requires evaluation of electrical and mechanical compatibility based on the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Voltage rating must meet or exceed 15V collector-emitter breakdown voltage
Frequency capability must support 600MHz operation
Power dissipation must accommodate 350mW maximum
Current handling must support 50mA maximum collector current
DC current gain characteristics must be compatible with circuit design requirements

Mechanical Compatibility Criteria:

Mounting type and package configuration must be compatible with the application
Operating temperature range must encompass the required thermal environment

The substitute parts identified below are grouped based on their ability to satisfy these electrical and mechanical parameters within the constraints of their respective package types and product status.

Parameter Comparison

Parameter	PN918_D74Z (onsemi)	BFP760H6327XTSA1 (Infineon)	HFA3102BZ (Renesas)	MAPRST0912-350 (MACOM)
Transistor Type	NPN	NPN	6 NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	15V	4V	12V	65V
Frequency - Transition	600MHz	45GHz	10GHz	1.215GHz
Noise Figure (Typ @ f)	6dB @ 60MHz	0.5–0.95dB @ 900MHz–5.5GHz	1.8–2.1dB @ 500MHz–1GHz	—
Gain	15dB	16.5–29dB	12.4–17.5dB	9.4dB
Power - Max	350mW	240mW	250mW	350W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 3mA, 1V	160 @ 35mA, 3V	40 @ 10mA, 3V	—
Current - Collector (Ic) (Max)	50mA	70mA	30mA	32.5A
Operating Temperature	-55 to 150°C	150°C	150°C	200°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-92-3	SOT-343	14-SOIC	—
Product Status	Obsolete	Active	Active	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)

Engineering Selection Recommendations

BFP760H6327XTSA1 (Infineon Technologies): This part is active and ROHS3 compliant. It exceeds the frequency capability of the PN918_D74Z at 45GHz and provides superior noise figure performance. However, the collector-emitter breakdown voltage is limited to 4V, which is below the 15V requirement of the PN918_D74Z. The surface-mount SOT-343 package differs from the through-hole TO-92-3 configuration. This part is suitable only for applications where voltage requirements can be reduced and surface-mount assembly is feasible.

HFA3102BZ (Renesas Electronics Corporation): This part is active and ROHS3 compliant. It provides a 12V collector-emitter breakdown voltage, which approaches but does not fully meet the 15V specification. The 10GHz transition frequency exceeds the 600MHz requirement. The 14-SOIC surface-mount package differs from the through-hole TO-92-3 configuration. Moisture sensitivity level is rated at MSL 3 (168 Hours), requiring controlled storage conditions. This part is suitable for applications where the 12V voltage rating is acceptable and surface-mount assembly is feasible.

MAPRST0912-350 (MACOM Technology Solutions): This part is active and ROHS3 compliant. It provides a 65V collector-emitter breakdown voltage, exceeding the 15V requirement. The 1.215GHz transition frequency exceeds the 600MHz requirement. The maximum power dissipation of 350W significantly exceeds the 350mW requirement, and the maximum collector current of 32.5A far exceeds the 50mA requirement. The chassis-mount configuration differs fundamentally from the through-hole TO-92-3 package. This part is suitable only for high-power applications with substantially different electrical and mechanical requirements.

Frequently Asked Questions (FAQ)

Q: Can the BFP760H6327XTSA1 directly replace the PN918_D74Z?

A: Direct replacement is not recommended. While both are NPN RF transistors, the BFP760H6327XTSA1 has a maximum collector-emitter breakdown voltage of 4V, which is insufficient for applications requiring the 15V rating of the PN918_D74Z. Additionally, the surface-mount SOT-343 package is incompatible with through-hole TO-92-3 circuit board layouts. Substitution requires circuit redesign and assembly process modification.

Q: What are the key voltage limitations when considering substitutes?

A: The PN918_D74Z operates at a maximum collector-emitter breakdown voltage of 15V. The BFP760H6327XTSA1 is limited to 4V, and the HFA3102BZ is limited to 12V. Only the MAPRST0912-350 exceeds this voltage rating at 65V. Applications requiring the full 15V rating cannot use the BFP760H6327XTSA1 or HFA3102BZ without circuit modification to reduce operating voltage.

Q: Are there packaging compatibility considerations?

A: Yes. The PN918_D74Z uses a through-hole TO-92-3 package. The BFP760H6327XTSA1 uses surface-mount SOT-343, the HFA3102BZ uses surface-mount 14-SOIC, and the MAPRST0912-350 uses chassis-mount configuration. Each substitute requires different assembly methods and printed circuit board layouts. Through-hole designs cannot accommodate surface-mount or chassis-mount alternatives without significant redesign.

Q: What is the significance of product status in selecting a substitute?

A: The PN918_D74Z is obsolete, meaning it is no longer manufactured. All three substitute parts are active products with ongoing production and availability. Active status ensures continued supply chain access and technical support from manufacturers.

Q: How do frequency capabilities affect substitution?

A: The PN918_D74Z operates at 600MHz transition frequency. All substitute parts exceed this frequency: BFP760H6327XTSA1 at 45GHz, HFA3102BZ at 10GHz, and MAPRST0912-350 at 1.215GHz. Higher frequency capability does not prevent substitution in lower-frequency applications, but circuit performance characteristics may differ due to different noise figure and gain profiles.

Q: What moisture sensitivity considerations apply?

A: The PN918_D74Z and BFP760H6327XTSA1 both have MSL 1 (Unlimited), requiring no special moisture control. The HFA3102BZ has MSL 3 (168 Hours), requiring controlled storage and handling within 168 hours of package opening. The MAPRST0912-350 has MSL 1 (Unlimited). MSL 3 components require more stringent storage and assembly procedures.

Q: Can the MAPRST0912-350 substitute for the PN918_D74Z in standard RF applications?

A: The MAPRST0912-350 is designed for high-power applications with fundamentally different electrical characteristics. Its 350W power rating and 32.5A collector current are orders of magnitude beyond the 350mW and 50mA specifications of the PN918_D74Z. The chassis-mount configuration is incompatible with through-hole circuit boards. This part is not suitable for standard PN918_D74Z applications.

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