PN3566 NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PN3566 is an NPN bipolar junction transistor manufactured by onsemi, rated for 30V collector-emitter breakdown voltage and 600mA maximum collector current in a TO-92-3 through-hole package. This device is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The PN3566 delivers 625mW maximum power dissipation with a minimum DC current gain of 150 at 10mA collector current and 10V collector-emitter voltage.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	600	mA
Power - Max	625	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 10mA, 10V	-
Vce Saturation (Max) @ Ib, Ic	1V @ 10mA, 100mA	-
Current - Collector Cutoff (Max)	50	nA
Mounting Type	Through Hole	-
Package / Case	TO-92-3	-

Substitute Part Grouping Explanation

Substitution of the PN3566 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Voltage - Collector Emitter Breakdown rating must equal or exceed 30V
Current - Collector (Ic) maximum rating must equal or exceed 600mA
Power dissipation capability must equal or exceed 625mW
DC Current Gain (hFE) must support the application's bias requirements
Collector cutoff current (ICBO) must not exceed 50nA

Mechanical Compatibility Criteria:

Mounting type must be Through Hole
Package must be TO-92-3 or TO-92 compatible form factor

The ZTX849 from Diodes Incorporated satisfies these substitution criteria with enhanced electrical performance characteristics while maintaining mechanical compatibility through its E-Line (TO-92 compatible) package configuration.

Parameter Comparison

Parameter	PN3566 (onsemi)	ZTX849 (Diodes Inc.)	Unit
Transistor Type	NPN	NPN	-
Voltage - Collector Emitter Breakdown (Max)	30	30	V
Current - Collector (Ic) (Max)	600	5000	mA
Power - Max	625	1200	mW
DC Current Gain (hFE) (Min)	150 @ 10mA, 10V	100 @ 1A, 1V	-
Vce Saturation (Max)	1V @ 10mA, 100mA	220mV @ 200mA, 5A	-
Current - Collector Cutoff (Max)	50	50	nA
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-92-3	E-Line-3 (TO-92 compatible)	-
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

PN3566 Status: The PN3566 is classified as obsolete, limiting availability for new production and long-term supply chain reliability.

ZTX849 Selection Basis: The ZTX849 is an active product from Diodes Incorporated, ensuring ongoing availability and manufacturing support. This device meets all electrical substitution criteria with superior performance margins:

Collector current rating of 5A exceeds the PN3566 requirement of 600mA
Power dissipation capability of 1.2W exceeds the PN3566 specification of 625mW
Collector-emitter breakdown voltage of 30V matches the PN3566 specification
Collector cutoff current of 50nA matches the PN3566 specification
E-Line (TO-92 compatible) package provides mechanical compatibility with TO-92-3 footprints
RoHS3 compliance and REACH unaffected status align with modern regulatory requirements
Operating temperature range of -55°C to 200°C provides extended thermal performance

The ZTX849 operates at 100MHz transition frequency, providing additional bandwidth capability not specified in the PN3566 datasheet.

Frequently Asked Questions (FAQ)

Q: Can the ZTX849 directly replace the PN3566 in existing designs?

A: The ZTX849 is electrically compatible with the PN3566 across all critical parameters. The E-Line (TO-92 compatible) package maintains mechanical compatibility with TO-92-3 through-hole footprints. Pin configuration and polarity are identical for NPN transistors in this package family.

Q: What are the key differences between these devices?

A: The ZTX849 provides enhanced electrical performance with 5A maximum collector current versus 600mA for the PN3566, and 1.2W power dissipation versus 625mW. The ZTX849 features lower saturation voltage (220mV at 5A) compared to the PN3566 (1V at 100mA), resulting in reduced power loss in switching applications. The ZTX849 is an active product with current manufacturing support, whereas the PN3566 is obsolete.

Q: Are there package compatibility concerns?

A: The ZTX849 E-Line package is specified as TO-92 compatible, ensuring fit within existing TO-92-3 through-hole footprints. Both devices use three-lead configurations with identical pin assignments for NPN transistors (Collector, Base, Emitter).

Q: What compliance certifications apply to the ZTX849?

A: The ZTX849 is RoHS3 compliant and REACH unaffected. Both devices carry ECCN classification EAR99 and are subject to HTSUS code 8541.29.0075 for the ZTX849 and 8541.21.0095 for the PN3566.

Q: How do the DC current gain specifications compare?

A: The PN3566 specifies minimum hFE of 150 at 10mA collector current and 10V collector-emitter voltage. The ZTX849 specifies minimum hFE of 100 at 1A collector current and 1V collector-emitter voltage. The ZTX849's gain specification is measured at higher current levels, reflecting its higher current rating. Both devices provide sufficient gain for standard amplification and switching applications.

Q: What is the moisture sensitivity level for these devices?

A: Both the PN3566 and ZTX849 carry MSL (Moisture Sensitivity Level) rating of 1, indicating unlimited shelf life without moisture control requirements.

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