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PN3565 Equivalent & Substitute Parts
Part Overview
The PN3565 is an NPN bipolar junction transistor manufactured by onsemi, rated for 25 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in a through-hole TO-92-3 configuration with a maximum power dissipation of 625 mW. The PN3565 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating different package types and manufacturer sources.
Substiute Parts
Key Parameters
| Parameter | PN3565 Specification |
|---|---|
| Transistor Type | NPN |
| Maximum Collector Current (Ic) | 500 mA |
| Collector-Emitter Breakdown Voltage (Max) | 25 V |
| Maximum Power Dissipation | 625 mW |
| Operating Temperature Range | -55°C to 150°C |
| Package Type | TO-92-3 (Through Hole) |
| Vce Saturation (Max) | 350 mV @ 100 µA, 1 mA |
| DC Current Gain (hFE Min) | 150 @ 1 mA, 10 V |
Substitute Part Grouping Explanation
Substitute parts for the PN3565 are evaluated based on the following critical electrical parameters: transistor type (NPN), maximum collector current (500 mA minimum), collector-emitter breakdown voltage (25 V minimum), maximum power dissipation (625 mW minimum), and operating temperature range (-55°C to 150°C minimum). Package type compatibility is secondary to electrical specifications; however, mounting type differences (through-hole versus surface-mount) are noted for design integration purposes.
The MPS3415 TIN/LEAD qualifies as a direct substitute based on identical electrical ratings and through-hole packaging. The MMBT100 qualifies as a functional substitute with enhanced electrical specifications (45 V breakdown voltage, 250 MHz transition frequency) and surface-mount packaging, suitable for applications where package type conversion is acceptable.
Parameter Comparison
| Parameter | PN3565 | MPS3415 TIN/LEAD | MMBT100 |
|---|---|---|---|
| Manufacturer | onsemi | Central Semiconductor Corp | onsemi |
| Transistor Type | NPN | NPN | NPN |
| Ic (Max) | 500 mA | 500 mA | 500 mA |
| Vce Breakdown (Max) | 25 V | 25 V | 45 V |
| Power Dissipation (Max) | 625 mW | 625 mW | 350 mW |
| Operating Temperature | -55°C to 150°C | -65°C to 150°C | -55°C to 150°C |
| Package Type | TO-92-3 (Through Hole) | TO-92-3 (Through Hole) | SOT-23-3 (Surface Mount) |
| Vce Saturation (Max) | 350 mV @ 100 µA, 1 mA | 300 mV @ 3 mA, 50 mA | 400 mV @ 20 mA, 200 mA |
| DC Current Gain (hFE Min) | 150 @ 1 mA, 10 V | 180 @ 2 mA, 4.5 V | 100 @ 150 mA, 5 V |
| Frequency - Transition | Not specified | Not specified | 250 MHz |
| Product Status | Obsolete | Active | Active |
Engineering Selection Recommendations
MPS3415 TIN/LEAD is the primary substitute for direct replacement applications. This part maintains identical electrical specifications (25 V breakdown, 500 mA collector current, 625 mW power dissipation) and through-hole TO-92-3 packaging, enabling pin-compatible board-level substitution. The MPS3415 TIN/LEAD is currently in active production status with 872 pieces in stock. The extended operating temperature range (-65°C to 150°C) provides additional margin for low-temperature applications. Note that this part is RoHS non-compliant, which may impact procurement for regulated applications.
MMBT100 is suitable for applications where surface-mount technology integration is acceptable. This part exceeds the PN3565 electrical specifications with a 45 V breakdown voltage rating and includes a 250 MHz transition frequency specification. The MMBT100 is ROHS3 compliant and currently in active production with 65,400 pieces in stock. The reduced maximum power dissipation (350 mW versus 625 mW) requires thermal design verification for high-power applications. Package conversion from TO-92-3 to SOT-23-3 necessitates PCB layout modification.
Frequently Asked Questions (FAQ)
Q: Can the MMBT100 replace the PN3565 in all applications?
A: The MMBT100 meets or exceeds all critical electrical parameters (collector current, breakdown voltage, operating temperature). However, the reduced maximum power dissipation (350 mW versus 625 mW) requires thermal analysis for applications approaching the PN3565 power limit. The SOT-23-3 surface-mount package requires PCB redesign compared to the through-hole TO-92-3 package.
Q: Is the MPS3415 TIN/LEAD a direct pin-compatible replacement?
A: Yes. The MPS3415 TIN/LEAD maintains identical electrical specifications and through-hole TO-92-3 packaging, enabling direct board-level substitution without PCB modification. Pin configuration and lead spacing are compatible.
Q: What is the significance of the RoHS compliance difference between MPS3415 TIN/LEAD and MMBT100?
A: The MPS3415 TIN/LEAD is RoHS non-compliant due to lead-based solder composition, as indicated by the "TIN/LEAD" designation. The MMBT100 is ROHS3 compliant. Regulatory requirements for the end application determine which part is acceptable for procurement.
Q: How do the DC current gain specifications differ among these parts?
A: The PN3565 specifies hFE minimum of 150 at 1 mA and 10 V. The MPS3415 TIN/LEAD specifies hFE minimum of 180 at 2 mA and 4.5 V, indicating slightly higher gain at different operating points. The MMBT100 specifies hFE minimum of 100 at 150 mA and 5 V, reflecting lower gain at higher collector current. Circuit designs dependent on specific gain characteristics require parameter verification.
Q: What are the inventory implications for part selection?
A: The PN3565 has 749 pieces in stock but is obsolete. The MPS3415 TIN/LEAD has 872 pieces in stock and is active production. The MMBT100 has 65,400 pieces in stock and is active production. Long-term availability favors the MPS3415 TIN/LEAD and MMBT100 for new designs.
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