PN3563_D75Z RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The PN3563_D75Z is an RF transistor NPN manufactured by onsemi, rated for 15V collector-emitter breakdown voltage with a transition frequency of 1.5GHz and maximum power dissipation of 350mW. This component is packaged in a through-hole TO-92-3 configuration. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity.

Substiute Parts

PN3563_D75Z
onsemiIn Stock: 982PN3563_D75Z Datasheet
PN3563_D75Z
Current Part
BFP183WH6327XTSA1
Infineon TechnologiesIn Stock: 15329BFP183WH6327XTSA1 Datasheet
BFP183WH6327XTSA1
Similar
BFP405H6740XTSA1
Infineon TechnologiesIn Stock: 961BFP405H6740XTSA1 Datasheet
BFP405H6740XTSA1
Similar
BFP420H6801XTSA1
Infineon TechnologiesIn Stock: 9605BFP420H6801XTSA1 Datasheet
BFP420H6801XTSA1
Similar
BFP640FESDH6327XTSA1
Infineon TechnologiesIn Stock: 3682BFP640FESDH6327XTSA1 Datasheet
BFP640FESDH6327XTSA1
Similar
BFR340FH6327XTSA1
Infineon TechnologiesIn Stock: 6535BFR340FH6327XTSA1 Datasheet
BFR340FH6327XTSA1
Similar
BFR460L3E6327XTMA1
Infineon TechnologiesIn Stock: 15936BFR460L3E6327XTMA1 Datasheet
BFR460L3E6327XTMA1
Similar
BFR840L3RHESDE6327XTSA1
Infineon TechnologiesIn Stock: 14013BFR840L3RHESDE6327XTSA1 Datasheet
BFR840L3RHESDE6327XTSA1
Similar
MRF455
MACOM Technology SolutionsIn Stock: 1824MRF455 Datasheet
MRF455
Similar

Key Parameters

Parameter Value
Manufacturer Part Number PN3563_D75Z
Manufacturer onsemi
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1.5GHz
Power - Max 350mW
Current - Collector (Ic) (Max) 50mA
DC Current Gain (hFE) (Min) 20 @ 8mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-92-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the PN3563_D75Z RF transistor NPN is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN configuration required
  • Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 15V
  • Frequency Performance: Transition frequency must support 1.5GHz operation
  • Power Dissipation: Maximum power rating must accommodate 350mW
  • Current Handling: Collector current capability must meet or exceed 50mA
  • Operating Temperature Range: Must support -55°C to 150°C junction temperature

Secondary Considerations:

  • Mounting Type: Through-hole preferred for direct replacement; surface-mount alternatives require board redesign
  • Package Compatibility: TO-92-3 through-hole package is primary; alternative packages require PCB layout modification
  • DC Current Gain: hFE characteristics must support circuit biasing requirements

The substitute parts listed below meet the core electrical requirements for RF transistor NPN operation. However, mounting type and package differences necessitate evaluation based on specific application requirements.

Parameter Comparison

Parameter PN3563_D75Z BFR340FH6327XTSA1 BFP640FESDH6327XTSA1 BFP420H6801XTSA1 BFR460L3E6327XTMA1 BFR840L3RHESDE6327XTSA1 MRF455 BFP183WH6327XTSA1 BFP405H6740XTSA1
Manufacturer onsemi Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies MACOM Technology Solutions Infineon Technologies Infineon Technologies
Transistor Type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 9V 4.7V 5V 5.8V 2.6V 18V 12V 5V
Frequency - Transition 1.5GHz 14GHz 46GHz 25GHz 22GHz 75GHz - 8.5GHz 25GHz
Power - Max 350mW 75mW 200mW 160mW 200mW 75mW 60W 450mW 75mW
Current - Collector (Ic) (Max) 50mA 20mA 50mA 35mA 50mA 35mA 15A 65mA 25mA
DC Current Gain (hFE) (Min) 20 @ 8mA, 10V 90 @ 5mA, 3V 110 @ 30mA, 3V 60 @ 20mA, 4V 90 @ 20mA, 3V 150 @ 10mA, 1.8V 10 @ 5A, 5V 70 @ 15mA, 8V 60 @ 5mA, 4V
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) - 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Chassis Mount Surface Mount Surface Mount
Package / Case TO-92-3 SOT-723 4-SMD, Flat Leads SC-82A, SOT-343 SC-101, SOT-883 SC-101, SOT-883 211-07 SC-82A, SOT-343 SC-82A, SOT-343
Product Status Obsolete Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

Voltage Rating Considerations: The PN3563_D75Z operates at 15V maximum collector-emitter breakdown voltage. Most substitute parts operate at lower voltage ratings (2.6V to 12V), with the exception of MRF455 at 18V. Selection of a substitute with lower voltage rating requires verification that circuit operating conditions do not exceed the substitute part's voltage specification.

Frequency and Power Trade-offs: The original PN3563_D75Z is rated for 1.5GHz transition frequency with 350mW power dissipation. Substitute parts demonstrate significantly higher frequency capabilities (8.5GHz to 75GHz) with varying power ratings. Higher frequency parts may introduce unnecessary complexity for applications requiring only 1.5GHz operation. Lower power-rated substitutes require thermal management verification.

Mounting Type Compatibility: The PN3563_D75Z is a through-hole component. All Infineon substitute parts are surface-mount devices, requiring PCB redesign. The MRF455 is a chassis-mount component suitable for high-power applications. Through-hole replacement is not available among the listed substitutes.

Product Status and Compliance: All substitute parts carry Active product status with RoHS3 compliance and REACH Unaffected designation, ensuring long-term availability and regulatory compliance. The original PN3563_D75Z is obsolete.

Current Handling: The PN3563_D75Z supports 50mA maximum collector current. BFP640FESDH6327XTSA1, BFR460L3E6327XTMA1, and BFP183WH6327XTSA1 meet or exceed this specification. Other substitutes operate at lower current ratings and require circuit current verification.

Frequently Asked Questions (FAQ)

Q: Can I directly replace the PN3563_D75Z with any of the listed substitute parts?

A: Direct replacement is not possible due to mounting type differences. The PN3563_D75Z is a through-hole TO-92-3 component, while all listed substitutes are surface-mount or chassis-mount devices. PCB redesign is required for any substitute implementation.

Q: Which substitute part most closely matches the PN3563_D75Z electrical specifications?

A: BFR340FH6327XTSA1 provides the closest voltage rating match at 9V (versus 15V original) and operates at 14GHz transition frequency, exceeding the 1.5GHz requirement. However, it is limited to 20mA collector current and 75mW power dissipation, both lower than the original specification.

Q: What is the impact of using a higher frequency-rated transistor in a 1.5GHz application?

A: Higher frequency-rated transistors (such as BFP640FESDH6327XTSA1 at 46GHz or BFR840L3RHESDE6327XTSA1 at 75GHz) will function in 1.5GHz applications. However, circuit design must account for different impedance characteristics, gain profiles, and noise figures at the lower operating frequency.

Q: Are there voltage rating limitations when substituting the PN3563_D75Z?

A: Yes. The original part is rated for 15V maximum collector-emitter breakdown voltage. Substitutes with lower voltage ratings (BFP640FESDH6327XTSA1 at 4.7V, BFR840L3RHESDE6327XTSA1 at 2.6V) require circuit verification to ensure operating voltages remain within the substitute part's specification. MRF455 at 18V exceeds the original rating and is suitable for higher voltage applications.

Q: What are the thermal operating range differences?

A: The PN3563_D75Z operates from -55°C to 150°C junction temperature. Most Infineon substitutes specify only the maximum temperature of 150°C without a minimum specification. Applications requiring -55°C operation must verify substitute part performance at low temperatures through manufacturer documentation.

Q: Is the MRF455 a suitable substitute for the PN3563_D75Z?

A: MRF455 is an NPN transistor with 18V voltage rating and 15A collector current capability, designed for high-power applications. It is not suitable as a direct substitute due to its chassis-mount package, significantly higher power rating (60W versus 350mW), and different application class. It is intended for power amplification rather than RF signal processing.

Q: What packaging considerations apply to surface-mount substitutes?

A: All Infineon substitutes require surface-mount assembly capability. BFP183WH6327XTSA1, BFP405H6740XTSA1, and BFP420H6801XTSA1 use SOT-343 packages. BFR340FH6327XTSA1 uses SOT-723. BFP640FESDH6327XTSA1 uses 4-TSFP. BFR460L3E6327XTMA1 and BFR840L3RHESDE6327XTSA1 use SOT-883. PCB layout and assembly process must be adapted accordingly.

Q: Which substitute offers the best power dissipation match?

A: BFP183WH6327XTSA1 provides the highest power rating at 450mW, exceeding the original 350mW specification. BFP640FESDH6327XTSA1 and BFR460L3E6327XTMA1 both offer 200mW, suitable for moderate power applications. Lower-rated parts (75mW to 160mW) require thermal analysis for applications approaching the original power specification.

Q: Are all substitute parts RoHS compliant?

A: All Infineon and MACOM substitute parts listed are RoHS3 compliant with REACH Unaffected status, meeting current regulatory requirements for electronic component procurement and assembly.

Request Quote (Ships tomorrow)