PN3563 RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The PN3563 is an RF transistor NPN manufactured by onsemi, designed for radio frequency applications operating at 1.5GHz with a maximum collector-emitter breakdown voltage of 15V and power dissipation of 350mW. The device is packaged in a through-hole TO-92-3 configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts are necessary for new designs and production continuity. Substitute parts must maintain functional compatibility within the RF transistor NPN category while accommodating modern packaging and performance requirements.

Substiute Parts

PN3563

onsemiIn Stock: 45205PN3563 Datasheet

Current PartRFQ

BFP193WH6327XTSA1

Infineon TechnologiesIn Stock: 54119BFP193WH6327XTSA1 Datasheet

SimilarRFQ

BFP843FH6327XTSA1

Infineon TechnologiesIn Stock: 1375BFP843FH6327XTSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PN3563 RF transistor NPN is determined by the following critical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration required
• Voltage - Collector Emitter Breakdown (Max): Substitute must equal or exceed 15V
• Frequency - Transition: Substitute must support minimum 1.5GHz operation
• Power - Max: Substitute must support minimum 350mW dissipation
• Current - Collector (Ic) (Max): Substitute must support minimum 50mA
• DC Current Gain (hFE): Substitute must maintain gain characteristics within acceptable RF operating range
• Operating Temperature Range: Substitute must support -55°C to 150°C minimum

Secondary Considerations:

• Mounting Type: Through-hole preferred for direct replacement; surface-mount alternatives require circuit board redesign
• Package compatibility: TO-92-3 is standard; alternative packages require mechanical adaptation

The substitute parts listed below are provided by the manufacturer as functional equivalents. However, the listed substitutes exhibit parameter variations that require engineering evaluation for specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

BFP193WH6327XTSA1 (Infineon Technologies):

• Product Status: Active, ensuring long-term availability and supply chain continuity
• RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards
• Voltage Rating: 12V maximum (3V lower than PN3563); suitable for applications operating at 12V or below
• Frequency Performance: 8GHz transition frequency exceeds PN3563 1.5GHz requirement
• Power Dissipation: 580mW exceeds PN3563 350mW requirement
• Current Capability: 80mA maximum exceeds PN3563 50mA requirement
• Mounting: Surface mount (SOT-343) requires circuit board redesign from through-hole TO-92-3
• Gain Range: 13.5dB ~ 20.5dB overlaps with PN3563 range

BFP843FH6327XTSA1 (Infineon Technologies):

• Product Status: Active, ensuring long-term availability and supply chain continuity
• RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards
• Voltage Rating: 2.25V maximum (significantly lower than PN3563 15V); not suitable for 15V applications
• Power Dissipation: 125mW (below PN3563 350mW requirement); limited for high-power RF applications
• Current Capability: 55mA maximum exceeds PN3563 50mA requirement
• Mounting: Surface mount requires circuit board redesign from through-hole TO-92-3
• Frequency: Not specified in provided data
• Gain Range: 13.5dB ~ 25dB overlaps with PN3563 range

Selection Basis: BFP193WH6327XTSA1 is the more suitable substitute when voltage and power requirements align with the 12V / 580mW specifications. BFP843FH6327XTSA1 is not recommended for direct replacement due to insufficient voltage rating and power dissipation relative to PN3563 specifications.

Frequently Asked Questions (FAQ)

Q: Can BFP193WH6327XTSA1 directly replace PN3563 in existing through-hole designs?

A: No. BFP193WH6327XTSA1 is a surface-mount device in SOT-343 package, while PN3563 is through-hole TO-92-3. Direct board-level substitution requires circuit board redesign and adapter solutions. Electrical compatibility exists for applications operating at 12V or below.

Q: What is the voltage limitation when using BFP193WH6327XTSA1 as a substitute?

A: BFP193WH6327XTSA1 has a maximum collector-emitter breakdown voltage of 12V, compared to PN3563 at 15V. Applications requiring 15V operation cannot use this substitute without circuit modification to reduce operating voltage.

Q: Is BFP843FH6327XTSA1 suitable for high-power RF applications?

A: No. BFP843FH6327XTSA1 has a maximum power dissipation of 125mW, which is below the PN3563 specification of 350mW. This device is limited to lower-power RF applications.

Q: What are the compliance differences between PN3563 and the substitute parts?

A: PN3563 is classified as obsolete with REACH Unaffected status. Both BFP193WH6327XTSA1 and BFP843FH6327XTSA1 are active products with RoHS3 Compliance and REACH Unaffected status, meeting current environmental regulations.

Q: Can BFP843FH6327XTSA1 operate at the same voltage as PN3563?

A: No. BFP843FH6327XTSA1 has a maximum collector-emitter breakdown voltage of 2.25V, making it unsuitable for PN3563 applications operating at 15V or even 12V.

Q: What frequency performance difference exists between PN3563 and BFP193WH6327XTSA1?

A: BFP193WH6327XTSA1 has a transition frequency of 8GHz, which exceeds PN3563 at 1.5GHz. This higher frequency capability provides additional performance margin for RF applications.

Q: Are there thermal operating range differences between these devices?

A: All three devices support a maximum junction temperature of 150°C. PN3563 specifies a minimum operating temperature of -55°C; operating temperature minimums for the substitute parts are not provided in the available data.