PMV65UNEAR N-Channel MOSFET 20V 2.8A Equivalent & Substitute Parts

Part Overview

The PMV65UNEAR is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 20V drain-to-source voltage with 2.8A continuous drain current at 25°C. The device is housed in a TO-236AB (SOT-23-3) surface mount package and is qualified to AEC-Q100 automotive standards. This part is currently in active production status with 1057 pieces available in inventory.

Substitute parts are identified when equivalent electrical performance can be maintained within the specified parameter ranges while maintaining compatibility with the TO-236-3/SOT-23-3 package family and automotive-grade qualification requirements.

Substiute Parts

PMV65UNEAR

Nexperia USA Inc.In Stock: 1118PMV65UNEAR Datasheet

Current PartRFQ

MGSF2N02ELT1G

onsemiIn Stock: 68465MGSF2N02ELT1G Datasheet

SimilarRFQ

SI2302-TP

Micro Commercial CoIn Stock: 30074SI2302-TP Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the PMV65UNEAR are qualified based on the following criteria:

Electrical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
• Continuous Drain Current (Id): Must equal or exceed 2.8A at 25°C
• On-Resistance (Rds On): Must not significantly exceed 73 mOhm at rated conditions to maintain thermal performance
• Gate Threshold Voltage: Must fall within ±8V maximum gate voltage specification
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Package and Mechanical Compatibility:

• Surface mount package within the TO-236-3/SOT-23-3 family
• Three-terminal configuration (Gate, Drain, Source)

Compliance and Qualification:

• RoHS3 Compliant status
• Moisture Sensitivity Level 1 (Unlimited)
• Active production status

The identified substitute parts meet these criteria while maintaining functional equivalence for general-purpose N-Channel MOSFET applications.

Parameter Comparison

Engineering Selection Recommendations

PMV65UNEAR (Primary Part): The PMV65UNEAR is the specified component with AEC-Q100 automotive qualification and active production status. It provides 73 mOhm on-resistance at rated conditions with 940 mW power dissipation capability. This part is suitable for applications requiring automotive-grade reliability.

MGSF2N02ELT1G (onsemi Substitute): This part maintains electrical equivalence with 20V Vdss and 2.8A continuous drain current. The on-resistance of 85 mOhm is slightly higher than the primary part, resulting in marginally increased power dissipation. Gate charge is lower at 3.5 nC, which may provide faster switching characteristics. RoHS3 compliance and MSL 1 rating confirm environmental compatibility. Suitable for applications where slightly elevated on-resistance is acceptable.

SI2302-TP (Micro Commercial Co Substitute): This part exceeds the minimum current specification at 3A continuous drain current with 72 mOhm on-resistance, matching the primary part's thermal performance. Gate charge is higher at 10 nC, indicating slower switching response compared to alternatives. RoHS3 compliance and MSL 1 rating confirm environmental compatibility. Suitable for applications requiring higher current margin or where gate charge characteristics are not critical.

All three parts maintain the -55°C to 150°C operating temperature range and are available in compatible TO-236-3/SOT-23-3 surface mount packages.

Frequently Asked Questions (FAQ)

Q: Can MGSF2N02ELT1G replace PMV65UNEAR in all applications?

A: MGSF2N02ELT1G meets the core electrical specifications with matching 20V Vdss and 2.8A Id ratings. The 85 mOhm on-resistance is 12 mOhm higher than the primary part, resulting in approximately 16% increased power dissipation under identical operating conditions. Substitution is valid where thermal design margins accommodate this increase.

Q: What is the significance of the gate charge difference between these parts?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The PMV65UNEAR specifies 6 nC at 4.5V, MGSF2N02ELT1G specifies 3.5 nC at 4V, and SI2302-TP specifies 10 nC at 4.5V. Lower gate charge enables faster switching transitions and reduces driver power consumption. Higher gate charge requires longer switching times and increased driver current capability.

Q: Are all three parts qualified to the same automotive standards?

A: The PMV65UNEAR carries explicit AEC-Q100 automotive qualification. MGSF2N02ELT1G and SI2302-TP are not listed with AEC-Q100 qualification in the provided specifications. For automotive applications requiring AEC-Q100 certification, the PMV65UNEAR is the specified choice.

Q: What is the package compatibility between these parts?

A: All three parts use the TO-236-3/SOT-23-3 surface mount package family with identical three-terminal (Gate, Drain, Source) pinout configuration. Physical footprint and land pattern compatibility is maintained across all substitutes.

Q: How do the input capacitance values affect circuit design?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transient behavior. PMV65UNEAR specifies 291 pF at 10V, MGSF2N02ELT1G specifies 150 pF at 5V, and SI2302-TP specifies 237 pF at 10V. Lower capacitance reduces gate driver loading and switching losses. These differences are typically managed through gate resistor selection in the driver circuit.

Q: Can SI2302-TP be used where higher current capacity is needed?

A: SI2302-TP is rated for 3A continuous drain current compared to 2.8A for the primary part. This provides 7% additional current margin. However, substitution should be based on actual circuit current requirements rather than margin alone. The 72 mOhm on-resistance matches the primary part's thermal performance.

Q: What inventory considerations apply to these substitutes?

A: PMV65UNEAR has 1057 pieces in stock, MGSF2N02ELT1G has 68400 pieces, and SI2302-TP has 30064 pieces. Availability differences may influence procurement decisions for high-volume applications.