PMV160UPVL P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PMV160UPVL is an active P-Channel MOSFET manufactured by Nexperia USA Inc., rated for 20V drain-to-source voltage with 1.2A continuous drain current at 25°C. The device is packaged in TO-236AB (SOT-23-3) surface mount configuration and is designed for general-purpose switching and amplification applications requiring low on-resistance performance.

Substitute parts are identified based on matching or exceeding the electrical specifications and mechanical compatibility within the P-Channel MOSFET category. Equivalent devices must maintain compatibility with the TO-236-3 / SOT-23-3 package footprint and satisfy the core performance parameters required for direct circuit replacement.

Substiute Parts

PMV160UPVL

Nexperia USA Inc.In Stock: 735PMV160UPVL Datasheet

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NTR1P02LT3G

onsemiIn Stock: 10220NTR1P02LT3G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the PMV160UPVL are qualified based on the following substitution criteria:

Electrical Parameter Matching:

• FET Type: P-Channel MOSFET (Metal Oxide Semiconductor)
• Drain to Source Voltage (Vdss): Equal to or greater than 20V
• Continuous Drain Current (Id): Equal to or greater than 1.2A at 25°C
• On-Resistance (Rds On): Comparable or lower at rated conditions
• Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
• Power Dissipation: Equal to or greater than 335mW

Mechanical Compatibility:

• Package Type: TO-236-3 / SOT-23-3 surface mount configuration
• Pin Configuration: 3-pin layout compatible with TO-236AB footprint
• Mounting Type: Surface mount technology

Compliance & Status:

• Product Status: Active
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The NTR1P02LT3G meets all substitution criteria through equivalent or superior electrical performance and identical mechanical packaging.

Parameter Comparison

Engineering Selection Recommendations

PMV160UPVL (Nexperia USA Inc.):

• Primary selection for applications requiring the specified electrical characteristics
• Active product status with established supply chain
• ROHS3 compliant and REACH unaffected
• MSL 1 rating permits unlimited shelf life storage

NTR1P02LT3G (onsemi) - Substitute:

• Direct substitute with superior continuous drain current rating (1.3A vs. 1.2A)
• Higher power dissipation capability (400mW vs. 335mW)
• Identical voltage rating and package configuration
• Active product status with ROHS3 compliance and MSL 1 rating
• Lower input capacitance (225 pF vs. 365 pF) may provide improved switching performance in certain applications
• Gate charge specification (5.5 nC vs. 4 nC) represents marginal increase in drive requirements

Both devices are suitable for direct circuit replacement within the specified electrical and thermal operating conditions. Selection between the two should be based on availability, supply chain requirements, and specific application thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the NTR1P02LT3G directly replace the PMV160UPVL in existing circuit designs?

A: Yes. Both devices are P-Channel MOSFETs with identical 20V Vdss ratings, compatible TO-236-3 / SOT-23-3 package footprints, and matching pin configurations. The NTR1P02LT3G provides equal or superior electrical performance across all critical parameters.

Q: What are the key differences between these two P-Channel MOSFETs?

A: The NTR1P02LT3G offers higher continuous drain current (1.3A vs. 1.2A), greater power dissipation capability (400mW vs. 335mW), and lower input capacitance (225 pF vs. 365 pF). Gate threshold voltage is slightly higher (1.25V vs. 950mV), and gate charge is marginally increased (5.5 nC vs. 4 nC).

Q: Are both devices RoHS compliant?

A: Yes. Both the PMV160UPVL and NTR1P02LT3G are ROHS3 compliant with MSL 1 moisture sensitivity ratings, permitting unlimited shelf life storage without desiccant requirements.

Q: What is the significance of the on-resistance (Rds On) specification?

A: On-resistance determines power dissipation during conduction. The PMV160UPVL specifies 210 mOhm at 1.2A and 4.5V gate voltage, while the NTR1P02LT3G specifies 220 mOhm at 750mA and 4.5V. Lower on-resistance reduces heat generation and improves efficiency in switching applications.

Q: How do the input capacitance values affect circuit performance?

A: Input capacitance (Ciss) influences gate drive requirements and switching speed. The NTR1P02LT3G exhibits lower input capacitance (225 pF vs. 365 pF), potentially enabling faster switching transitions and reduced gate drive power consumption in high-frequency applications.

Q: Are there packaging or mounting differences between these devices?

A: No. Both devices use identical TO-236-3 / SOT-23-3 surface mount packages with three-pin configurations. They are mechanically and electrically compatible for PCB footprint and reflow soldering processes.

Q: What operating temperature range do these devices support?

A: Both the PMV160UPVL and NTR1P02LT3G operate across the junction temperature range of -55°C to 150°C, supporting industrial and extended temperature applications.