PMV100ENEAR N-Channel MOSFET 30V 3A Equivalent & Substitute Parts

Part Overview

The PMV100ENEAR is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 30V drain-to-source voltage with 3A continuous drain current in a surface mount TO-236AB package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for ongoing production support, maintenance applications, and design continuity where this component is currently deployed.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	3	A
On-Resistance (Rds On) @ 3A, 10V	72	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	5.5	nC
Power Dissipation (Ta)	460	mW
Operating Temperature Range	-55 to 150	°C
Package Type	TO-236AB / SOT-23-3	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the PMV100ENEAR is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 30V
Continuous Drain Current (Id) must be equal to or greater than 3A at 25°C
On-Resistance (Rds On) must be comparable to minimize circuit performance degradation
Gate Threshold Voltage (Vgs(th)) must be within acceptable operating range for gate drive circuits
Operating temperature range must encompass -55°C to 150°C

Mechanical & Packaging Compatibility:

Package type must be TO-236AB, SC-59, or SOT-23-3 (all equivalent surface mount footprints)
Mounting type must be Surface Mount
Pin configuration must be compatible with existing PCB layouts

Compliance & Status:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) preferred
Active or Last Time Buy product status preferred over obsolete classifications

The three substitute parts listed below meet these criteria with varying degrees of parameter alignment and product availability status.

Parameter Comparison

Parameter	PMV100ENEAR (Main)	DMG3418L-7	DMN3150L-7	SI2304BDS-T1-GE3
Manufacturer	Nexperia USA Inc.	Diodes Incorporated	Diodes Incorporated	Vishay Siliconix
Vdss (V)	30	30	28	30
Id @ 25°C (A)	3	4	3.8	2.6
Rds On (mOhm)	72 @ 3A, 10V	60 @ 4A, 10V	85 @ 3.6A, 4.5V	70 @ 2.5A, 10V
Vgs(th) (V)	2.5 @ 250µA	1.5 @ 250µA	1.4 @ 250µA	3 @ 250µA
Qg (nC)	5.5 @ 10V	5.5 @ 4.5V	Not specified	4 @ 5V
Ciss (pF)	160 @ 15V	464.3 @ 15V	305 @ 5V	225 @ 15V
Power Dissipation (mW)	460	1400	1400	750
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-236AB / SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3 (TO-236)
Product Status	Not For New Designs	Active	Active	Last Time Buy
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

DMG3418L-7 (Diodes Incorporated)

The DMG3418L-7 provides the strongest electrical compatibility with the PMV100ENEAR. It exceeds the voltage and current specifications (30V, 4A) and delivers superior on-resistance performance (60mOhm vs. 72mOhm). The device maintains identical gate charge characteristics (5.5nC) and operates across the full temperature range. Active product status ensures long-term availability and supply chain stability. This substitute is recommended as the primary replacement for new production and ongoing support applications.

DMN3150L-7 (Diodes Incorporated)

The DMN3150L-7 meets the current requirement (3.8A) and operates at 28V, which is marginally below the 30V specification of the main part. On-resistance is slightly elevated (85mOhm at 4.5V vs. 72mOhm at 10V), indicating reduced efficiency in equivalent operating conditions. Active product status and high inventory availability (170,480 units) support supply continuity. This substitute is suitable for applications where the 28V rating is acceptable and cost optimization is prioritized.

SI2304BDS-T1-GE3 (Vishay Siliconix)

The SI2304BDS-T1-GE3 meets the 30V voltage specification but falls short on continuous drain current (2.6A vs. 3A). On-resistance is comparable (70mOhm at 2.5A, 10V). Last Time Buy status indicates limited future availability, making this substitute appropriate only for short-term production runs or maintenance applications where existing inventory can be secured. The TrenchFET® technology series designation indicates process-level differences from the main part.

Compliance & Certification Summary

All three substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited) moisture sensitivity, and full operating temperature range compatibility (-55°C to 150°C). All devices are surface mount SOT-23-3 packages with identical pinout compatibility to the TO-236AB footprint. No additional qualification or testing is required from a regulatory standpoint.

Frequently Asked Questions (FAQ)

Q: Can the DMG3418L-7 be used as a direct replacement for the PMV100ENEAR?

A: Yes. The DMG3418L-7 meets or exceeds all critical electrical parameters (30V, 4A vs. 3A) and shares the identical SOT-23-3 package footprint. No circuit modifications are required. Active product status ensures ongoing availability.

Q: Why does the DMN3150L-7 have a lower Vdss rating (28V vs. 30V)?

A: The DMN3150L-7 is rated for 28V maximum drain-to-source voltage, which is 2V below the PMV100ENEAR specification. This device is suitable only for applications where the actual operating voltage does not exceed 28V. Verify circuit maximum voltage before selection.

Q: What is the significance of the SI2304BDS-T1-GE3 "Last Time Buy" status?

A: Last Time Buy status indicates the manufacturer has announced end-of-life for this part. Existing inventory is available for purchase, but no future production is planned. This substitute is appropriate only for short-term production runs or maintenance applications where inventory can be secured immediately.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts (DMG3418L-7, DMN3150L-7, SI2304BDS-T1-GE3) are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity ratings, matching the environmental compliance profile of the PMV100ENEAR.

Q: Do the substitute parts require different gate drive voltages?

A: The DMG3418L-7 and DMN3150L-7 have lower gate threshold voltages (1.5V and 1.4V respectively) compared to the PMV100ENEAR (2.5V). The SI2304BDS-T1-GE3 has a higher threshold (3V). Verify that existing gate drive circuits can accommodate these variations. Lower threshold voltages may require reduced gate drive voltage to prevent overstress.

Q: What is the impact of higher input capacitance in the DMG3418L-7?

A: The DMG3418L-7 exhibits higher input capacitance (464.3pF vs. 160pF at 15V). This increases gate charge requirements and may slow switching transitions in high-frequency applications. Evaluate gate drive circuit current capability and switching frequency performance before selection.

Q: Can I use the DMN3150L-7 in a 30V application?

A: No. The DMN3150L-7 is rated for maximum 28V drain-to-source voltage. Using this device in a 30V application exceeds its voltage specification and risks device failure. Select only the DMG3418L-7 or SI2304BDS-T1-GE3 for 30V applications.

Q: Which substitute offers the best thermal performance?

A: The DMG3418L-7 and DMN3150L-7 both offer 1.4W power dissipation capability, compared to 460mW for the PMV100ENEAR. The SI2304BDS-T1-GE3 provides 750mW dissipation. Higher power dissipation capability indicates better thermal performance under continuous operation. Verify thermal management requirements for your specific application.

Q: Are the package dimensions identical across all parts?

A: Yes. All substitute parts use the SOT-23-3 package, which is mechanically and electrically equivalent to the TO-236AB package used by the PMV100ENEAR. PCB footprints are directly compatible with no layout modifications required.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message