PMST5088,115 Equivalent & Substitute Parts

Part Overview

The PMST5088,115 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc., designed for small-signal switching and amplification applications. This surface-mount device operates at 30 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 200 mW power dissipation. The component is housed in a SOT-323 (SC-70) package and is classified as Active product status with AEC-Q101 automotive qualification. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and compliance certifications to ensure functional interchangeability in circuit designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	200	mW
Frequency - Transition	100	MHz
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the PMST5088,115 are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Compatibility Parameters:

Power - Max: 150 mW or 200 mW
Frequency - Transition: 100 MHz or higher
Vce Saturation (Max): 600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max): 15 nA to 100 nA (ICBO)
DC Current Gain (hFE) (Min): 110 or higher @ 2 mA, 5V

All substitute parts maintain the core electrical specifications and package requirements necessary for direct circuit substitution. Variations in DC current gain and transition frequency represent acceptable performance ranges within the small-signal transistor category.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Power mW	fT MHz	hFE (Min) @ 2mA, 5V	Vce Sat mV	ICBO nA	Temp Range °C
PMST5088,115	Nexperia USA Inc.	100	30	200	100	300 @ 100µA, 5V	500 @ 1mA, 10mA	50	—
BC848AW RFG	Taiwan Semiconductor Corporation	100	30	200	100	110	600	100	-55 to 150
BC848AW-7-F	Diodes Incorporated	100	30	200	300	110	600	20	-65 to 150
BC848BW RFG	Taiwan Semiconductor Corporation	100	30	200	100	200	600	100	-55 to 150
BC848BWT1G	onsemi	100	30	150	100	200	600	15	-55 to 150
BC848CW RFG	Taiwan Semiconductor Corporation	100	30	200	100	420	600	100	-55 to 150
BC848CWT1G	Fairchild Semiconductor	100	30	150	100	420	600	15	-55 to 150
BC849AW RFG	Taiwan Semiconductor Corporation	100	30	200	100	110	600	100	-55 to 150
BC849BW RFG	Taiwan Semiconductor Corporation	100	30	200	100	200	600	100	-55 to 150
BC849CW RFG	Taiwan Semiconductor Corporation	100	30	200	100	420	600	100	-55 to 150

Engineering Selection Recommendations

All listed substitute parts maintain Active product status and ROHS3 compliance, ensuring regulatory alignment with the original PMST5088,115. Selection among substitutes depends on application-specific requirements:

For applications requiring higher DC current gain: BC848CW RFG, BC848CWT1G, and BC849CW RFG offer hFE (Min) of 420 @ 2 mA, 5V, compared to the PMST5088,115 specification of 300 @ 100 µA, 5V.

For applications with extended temperature range requirements: BC848AW-7-F from Diodes Incorporated operates from -65°C to 150°C, providing wider thermal coverage than standard -55°C to 150°C variants.

For applications with reduced power dissipation constraints: BC848BWT1G and BC848CWT1G are rated at 150 mW maximum power, compared to 200 mW for the primary part and most substitutes.

For applications requiring superior high-frequency performance: BC848AW-7-F features 300 MHz transition frequency, exceeding the 100 MHz specification of the PMST5088,115 and other substitutes.

For applications with stringent leakage current specifications: BC848AW-7-F (20 nA ICBO) and BC848BWT1G (15 nA ICBO) provide lower collector cutoff current compared to the PMST5088,115 (50 nA ICBO).

All substitute parts are packaged in SC-70 or SOT-323 surface-mount configurations, ensuring mechanical compatibility with existing PCB layouts designed for the PMST5088,115.

Frequently Asked Questions (FAQ)

Q: Can BC848 series transistors directly replace the PMST5088,115 in automotive applications?

A: BC848 series transistors are functionally compatible with the PMST5088,115 across all core electrical parameters (30 V Vce(br), 100 mA Ic, 100 MHz fT, SOT-323 package). However, the PMST5088,115 carries AEC-Q101 automotive qualification. Substitutes should be evaluated for compliance with specific automotive standards required by the application.

Q: What is the difference between BC848 and BC849 series transistors?

A: Both BC848 and BC849 series share identical electrical specifications (30 V, 100 mA, 100 MHz, SOT-323). The primary distinction lies in DC current gain grading: BC848 variants (A, B, C) and BC849 variants (A, B, C) are differentiated by hFE ranges. Selection between series depends on the required current gain for the specific circuit design.

Q: Are there differences in Vce saturation between the PMST5088,115 and substitute parts?

A: Yes. The PMST5088,115 specifies Vce Saturation of 500 mV @ 1 mA, 10 mA, while substitute parts specify 600 mV @ 5 mA, 100 mA. These measurements are taken at different bias conditions. For saturation-mode switching applications, verify that the 600 mV specification at higher current levels meets circuit requirements.

Q: Which substitute part offers the best performance for high-frequency applications?

A: BC848AW-7-F from Diodes Incorporated features 300 MHz transition frequency, compared to 100 MHz for the PMST5088,115 and most other substitutes. This part is suitable for applications requiring enhanced high-frequency response.

Q: Is the SOT-323 package identical across all listed parts?

A: All parts use SC-70 or SOT-323 surface-mount packages, which are mechanically equivalent. Pinout and footprint compatibility are maintained across all substitutes, enabling direct PCB layout reuse.

Q: What is the significance of DC current gain (hFE) variations among substitutes?

A: DC current gain variations (110 to 420 @ 2 mA, 5V) reflect different transistor grades within the BC848/BC849 families. Higher hFE values reduce base current requirements for a given collector current, affecting circuit biasing and power consumption. Select the hFE grade matching your circuit design specifications.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are ROHS3 compliant and carry Moisture Sensitivity Level 1 (Unlimited), matching the environmental and handling specifications of the PMST5088,115.

Q: Can BC848BWT1G or BC848CWT1G be used in place of the PMST5088,115 despite lower power rating?

A: BC848BWT1G and BC848CWT1G are rated at 150 mW maximum power, compared to 200 mW for the PMST5088,115. These parts are suitable for applications where power dissipation remains below 150 mW. Verify circuit power requirements before substitution.

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