PMPB12UN,115 Equivalent & Substitute MOSFETs Reference

Part Overview

PMPB12UN,115 is an N-Channel MOSFET from NXP USA Inc., specified for 20 V drain-to-source voltage and 7.9A continuous drain current (Ta), in a surface-mount 6-DFN2020MD package. The part is currently obsolete, necessitating the identification of alternate or substitute models for ongoing designs and production continuity within the Transistors, FETs, MOSFETs category.

Substiute Parts

PMPB12UN,115
NXP USA Inc.In Stock: 864PMPB12UN,115 Datasheet
PMPB12UN,115
Current Part
DMN2022UFDF-7
Diodes IncorporatedIn Stock: 1924DMN2022UFDF-7 Datasheet
DMN2022UFDF-7
MFR Recommended
PMPB10XNE,115
Nexperia USA Inc.In Stock: 3454PMPB10XNE,115 Datasheet
PMPB10XNE,115
MFR Recommended

Key Parameters

Manufacturer Part Number Category Technology FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case RoHS Status Moisture Sensitivity Level (MSL) REACH Status
PMPB12UN,115 Transistors, FETs, MOSFETs MOSFET (Metal Oxide) N-Channel 20 V 7.9A (Ta) 1.8V, 4.5V 18mOhm @ 7.9A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 886 pF @ 10 V 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount 6-DFN2020MD (2x2) 6-UDFN Exposed Pad ROHS3 Compliant 1 (Unlimited) REACH Unaffected

Substitute Part Grouping Explanation

Substitute identification is based strictly on matching or exceeding the key electrical and mechanical parameters of PMPB12UN,115. Parameters governing substitution eligibility include:

  • FET Category and Technology: N-Channel, MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
  • Continuous Drain Current (Id) @ 25°C
  • Rds On (Max) @ specified current and gate-source voltage
  • Drive Voltage requirements
  • Threshold Voltage (Vgs(th))
  • Gate Charge (Qg) and Maximum Gate-Source Voltage (Vgs)
  • Input Capacitance
  • Power Dissipation (Max)
  • Operating Temperature Range
  • Package/Case, Supplier Device Package, Mounting Type
  • RoHS and REACH Compliance
  • Moisture Sensitivity Level (MSL)

Only substitute parts matching within these provided parameter boundaries are listed.

Parameter Comparison

Manufacturer Part Number Manufacturer Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case RoHS Status Moisture Sensitivity Level (MSL) REACH Status
PMPB12UN,115 NXP USA Inc. 20 V 7.9A (Ta) 1.8V, 4.5V 18mOhm @ 7.9A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 886 pF @ 10 V 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount 6-DFN2020MD (2x2) 6-UDFN Exposed Pad ROHS3 Compliant 1 (Unlimited) REACH Unaffected
DMN2022UFDF-7 Diodes Incorporated 20 V 7.9A (Ta) 1.5V, 4.5V 22mOhm @ 4A, 4.5V 1V @ 250µA 18 nC @ 8 V ±8V 907 pF @ 10 V 660mW (Ta) -55°C ~ 150°C (TJ) Surface Mount U-DFN2020-6 (Type F) 6-UDFN Exposed Pad ROHS3 Compliant 1 (Unlimited) REACH Unaffected
PMPB10XNE,115 Nexperia USA Inc. 20 V 9A (Ta) 1.8V, 4.5V 14mOhm @ 9A, 4.5V 900mV @ 250µA 34 nC @ 4.5 V ±12V 2175 pF @ 10 V 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount DFN2020MD-6 6-UDFN Exposed Pad ROHS3 Compliant 1 (Unlimited) REACH Unaffected

Engineering Selection Recommendations

All listed substitutes—DMN2022UFDF-7 and PMPB10XNE,115—are designated as active status and are compliant with ROHS3, REACH, and have an unlimited Moisture Sensitivity Level (MSL 1). These attributes ensure suitability for regulated environments and continued component sourcing where certification and part status are required. Obsolescence of the main part number, PMPB12UN,115, necessitates transition to these substitutes for electronic designs within this MOSFET category.

Frequently Asked Questions (FAQ)

Q1: What are the primary parameters to verify when selecting a substitute for PMPB12UN,115? A1: Key parameters include N-Channel MOSFET technology, 20 V drain-to-source voltage, continuous drain current, Rds On rating at specified current and Vgs, drive voltage compatibility, threshold voltage, gate charge, input capacitance, power dissipation, package type, operating temperature, and compliance standards.

Q2: Is package compatibility guaranteed between PMPB12UN,115 and its substitutes? A2: All substitutes use a surface-mount 6-UDFN exposed pad format; check the supplier device package detail to match board land pattern, as mechanical dimensions may differ.

Q3: Are all recommended substitute parts compliant with RoHS, REACH, and MSL standards? A3: Yes, all listed substitutes are ROHS3 compliant, REACH unaffected, and rated MSL 1 (Unlimited), supporting broad compatibility in manufacturing and regulatory environments.

Q4: Do the substitute MOSFETs support the same operating temperature range as PMPB12UN,115? A4: Yes, all options listed provide an operating temperature range of -55°C to 150°C (TJ).

Q5: Can any substitute be selected solely based on electrical specifications and compliance? A5: Selection within this group is strictly based on the provided electrical specifications, product status, and compliance information. No additional criteria are given. Ensure alignment with the listed parameters for the application.

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