PMPB12EPX P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PMPB12EPX is a P-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mount applications in the 6-UDFN Exposed Pad package. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 7.9A at 25°C. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

PMPB12EPX

Nexperia USA Inc.In Stock: 924PMPB12EPX Datasheet

Current PartRFQ

PMPB14R0EPX

Nexperia USA Inc.In Stock: 13867PMPB14R0EPX Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PMPB12EPX is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Channel Type: P-Channel MOSFET required
• Gate Threshold Voltage (Vgs(th)): Must remain within ±20V maximum gate voltage specification
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Package Type: 6-UDFN Exposed Pad (DFN2020MD-6) required for PCB layout compatibility
• Mounting Type: Surface Mount required
• Series: TrenchMOS™ technology platform

Performance Criteria:

• Continuous Drain Current (Id): Substitute must meet or exceed 7.9A at 25°C
• On-State Resistance (Rds On): Substitute performance must not degrade circuit operation
• Gate Charge (Qg): Must remain within acceptable switching speed parameters
• Input Capacitance (Ciss): Must maintain circuit timing characteristics

Compliance Criteria:

• RoHS3 Compliant status required
• REACH Unaffected status required
• Moisture Sensitivity Level (MSL) 1 acceptable

The PMPB14R0EPX meets all substitution criteria and is identified as a direct equivalent for the PMPB12EPX.

Parameter Comparison

Engineering Selection Recommendations

PMPB14R0EPX as Primary Substitute:

The PMPB14R0EPX is a direct functional equivalent to the PMPB12EPX. Both devices share identical electrical specifications for voltage rating (30V Vdss), gate threshold voltage (2V @ 250µA), maximum gate voltage (±20V), input capacitance (227 pF @ 15V), and operating temperature range (-55°C to 150°C). Both are packaged in the 6-UDFN Exposed Pad configuration and utilize TrenchMOS™ technology.

The PMPB14R0EPX provides enhanced performance characteristics: continuous drain current increases from 7.9A to 9A, on-state resistance decreases from 17.3 mOhm to 16 mOhm, and gate charge remains consistent at approximately 40 nC. These improvements result in lower power dissipation and improved thermal performance, making the PMPB14R0EPX suitable for applications requiring higher current capacity or reduced heat generation.

Both parts maintain identical compliance certifications: ROHS3 Compliant, REACH Unaffected, and Moisture Sensitivity Level 1 (Unlimited). Both are classified as obsolete products from Nexperia USA Inc.

Selection Basis:

Component selection between PMPB12EPX and PMPB14R0EPX is determined by application current requirements and thermal management constraints. The PMPB14R0EPX accommodates higher continuous drain current and delivers superior on-state resistance characteristics while maintaining full electrical and mechanical compatibility with the PMPB12EPX footprint and interface specifications.

Frequently Asked Questions (FAQ)

Q: Can the PMPB14R0EPX directly replace the PMPB12EPX in existing designs?

A: Yes. Both devices share identical package geometry (6-UDFN Exposed Pad, DFN2020MD-6), voltage ratings (30V Vdss), gate specifications (2V threshold, ±20V maximum), and operating temperature range (-55°C to 150°C). PCB layout and schematic integration require no modification. The PMPB14R0EPX provides enhanced current capacity (9A versus 7.9A) and improved on-state resistance (16 mOhm versus 17.3 mOhm).

Q: What are the key differences between PMPB12EPX and PMPB14R0EPX?

A: The primary differences are continuous drain current (7.9A versus 9A at 25°C) and on-state resistance (17.3 mOhm versus 16 mOhm at 10V gate voltage). Gate charge remains equivalent at approximately 40 nC. Power dissipation at ambient temperature increases slightly (1.7W versus 1.9W), while thermal dissipation at case temperature decreases (13W versus 12.5W). All other electrical and mechanical parameters remain identical.

Q: Are both parts available in the same packaging options?

A: Both PMPB12EPX and PMPB14R0EPX are supplied in the 6-UDFN Exposed Pad package (DFN2020MD-6) for surface mount applications. The PMPB14R0EPX is available in Tape & Reel (TR) packaging format. Package footprint and pinout are identical, ensuring direct PCB compatibility.

Q: What compliance certifications apply to both parts?

A: Both PMPB12EPX and PMPB14R0EPX are ROHS3 Compliant, REACH Unaffected, and classified as Moisture Sensitivity Level 1 (Unlimited). Both parts carry ECCN classification EAR99 and HTSUS code 8541.29.0095. Compliance status is identical across both devices.

Q: Why are both parts classified as obsolete?

A: Both PMPB12EPX and PMPB14R0EPX are listed as obsolete products by Nexperia USA Inc. Obsolete classification indicates that these parts are no longer in active production. Existing inventory remains available through authorized distributors. For new designs, consultation with Nexperia regarding current-generation P-Channel MOSFET alternatives in the 30V class is recommended.

Q: How do gate charge specifications affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Both PMPB12EPX and PMPB14R0EPX specify 39.9 nC and 40 nC respectively at 10V gate voltage. Equivalent gate charge ensures identical switching speed and driver circuit requirements. Input capacitance (Ciss) is also identical at 227 pF @ 15V, maintaining consistent circuit timing characteristics.

Q: What thermal considerations apply to substitution?

A: The PMPB14R0EPX exhibits improved thermal performance due to lower on-state resistance (16 mOhm versus 17.3 mOhm). At equivalent current levels, the PMPB14R0EPX generates less heat. Power dissipation at case temperature (Tc) decreases from 13W to 12.5W. Both devices operate across the identical temperature range (-55°C to 150°C TJ). Thermal management design remains unchanged for direct substitution.