Equivalent & Substitute Parts Reference for PMN23UN,165

Part Overview

The PMN23UN,165 by NXP USA Inc. is an N-Channel MOSFET with a Drain to Source Voltage of 20 V, continuous drain current of 6.3A (Tc), and a maximum Rds On of 28mOhm @ 2A, 4.5V, provided in an SC-74 (SOT-457) surface mount package. This MOSFET is classified as obsolete, necessitating the search for equivalent and substitute models with compatible electrical and mechanical parameters for continued production and maintenance activities. Identifying substitutes is essential to ensure design continuity and supply chain stability in applications originally using the PMN23UN,165.

Key Parameters

Parameter	PMN23UN,165 Value
Manufacturer	NXP USA Inc.
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	10.6 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 10 V
Power Dissipation (Max)	1.75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-74
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for PMN23UN,165 are grouped strictly according to matching key parameters for the Transistors, FETs, MOSFETs category. The allowed substitution criteria are: N-Channel MOSFET type, 20 V Drain to Source Voltage, similar or higher continuous drain current capability, comparable Rds On at defined conditions, compatible gate threshold voltage, equivalent package for surface mounting, and matching RoHS compliance. All substitutes listed meet these defined criteria.

Parameter Comparison

Part Number	Manufacturer	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	RoHS Status	Product Status
PMN23UN,165	NXP USA Inc.	20 V	6.3A (Tc)	1.8V, 4.5V	28mOhm @ 2A, 4.5V	700mV @ 1mA (Typ)	10.6 nC @ 4.5 V	±8V	740 pF @ 10 V	1.75W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SC-74	ROHS3 Compliant	Obsolete
FDC637AN	onsemi	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	16 nC @ 4.5 V	±8V	1125 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	ROHS3 Compliant	Active
FDC637BNZ	onsemi	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	12 nC @ 4.5 V	±12V	895 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	ROHS3 Compliant	Active
IRLMS2002TRPBF	Infineon Technologies	20 V	6.5A (Ta)	2.5V, 4.5V	30mOhm @ 6.5A, 4.5V	1.2V @ 250µA	22 nC @ 5 V	±12V	1310 pF @ 15 V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro6™(SOT23-6)	ROHS3 Compliant	Active
NTGS3130NT1G	onsemi	20 V	4.23A (Ta)	2.5V, 4.5V	24mOhm @ 5.6A, 4.5V	1.4V @ 250µA	20.3 nC @ 4.5 V	±8V	935 pF @ 16 V	600mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	ROHS3 Compliant	Obsolete
RUQ050N02TR	Rohm Semiconductor	20 V	5A (Ta)	1.5V, 4.5V	30mOhm @ 5A, 4.5V	1.3V @ 1mA	12 nC @ 4.5 V	±10V	900 pF @ 10 V	1.25W (Ta)	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	ROHS3 Compliant	Active
SI3442BDV-T1-E3	Vishay Siliconix	20 V	3A (Ta)	2.5V, 4.5V	57mOhm @ 4A, 4.5V	1.8V @ 250µA	5 nC @ 4.5 V	±12V	295 pF @ 10 V	860mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	ROHS3 Compliant	Active
STT5N2VH5	STMicroelectronics	20 V	5A (Tj)	2.5V, 4.5V	30mOhm @ 2A, 4.5V	700mV @ 250µA (Min)	4.6 nC @ 4.5 V	±8V	367 pF @ 16 V	1.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	ROHS3 Compliant	Not For New Designs

Engineering Selection Recommendations

Substitute selection is determined by product status and RoHS/REACH compliance. All substitute MOSFETs listed exhibit ROHS3 compliance and REACH unaffected status, aligning with environmental requirements. Active and in-stock parts (FDC637AN, FDC637BNZ, IRLMS2002TRPBF, RUQ050N02TR, SI3442BDV-T1-E3) offer viable alternatives for continued design and production. Obsolete and not for new design status of PMN23UN,165, NTGS3130NT1G, and STT5N2VH5 restrict use to existing designs only.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for selecting a substitute for PMN23UN,165?
A1: Only N-channel MOSFETs with matching drain-to-source voltage (20V), comparable continuous drain current, similar or lower Rds On values, compatible gate and input capacitance characteristics, and equivalent surface-mount packages are eligible for substitution.

Q2: Is package compatibility required for these substitutes?
A2: Yes. Substitutes must offer surface mount formats that are functionally compatible with SC-74 or related small outline packages suitable for automated assembly.

Q3: Are the substitute parts environmentally compliant?
A3: All substitute MOSFETs listed are ROHS3 compliant and REACH unaffected according to the provided data.

Q4: Do product status classifications affect substitute part selection?
A4: Only substitute parts marked as "Active" in the parameter comparison are suitable for new designs. Obsolete or "Not For New Designs" status is suitable for repair or continuity in existing designs only.

Q5: What documentation or certifications should be reviewed for substitutes?
A5: Review the compliance status as indicated (ROHS3, REACH) and supplier documentation for product status.

Q6: Can substitute parts differ in gate threshold voltage or Rds On values?
A6: Substitute parts within the range of specified parameters for drain current, gate threshold voltage, Rds On, and package are considered compatible per the provided data. Differences exist within allowed ranges as defined in the comparison table.

Q7: Is the continuous drain current rating required to match exactly?
A7: Substitute selection strictly respects similar or higher current ratings, ensuring compatibility per the comparison charted values above.

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