PML260SN,118 N-Channel MOSFET 200V 8.8A Equivalent & Substitute Parts

Part Overview

The PML260SN,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 200V drain-to-source voltage with 8.8A continuous drain current at 25°C. This device is housed in a DFN3333-8 package and is part of the TrenchMOS™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, gate charge characteristics, and thermal performance while accommodating different package configurations.

Substiute Parts

PML260SN,118

Nexperia USA Inc.In Stock: 726PML260SN,118 Datasheet

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BSZ22DN20NS3GATMA1

Infineon TechnologiesIn Stock: 1000261BSZ22DN20NS3GATMA1 Datasheet

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FQD12N20LTM

onsemiIn Stock: 35481FQD12N20LTM Datasheet

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SI7820DN-T1-GE3

Vishay SiliconixIn Stock: 17809SI7820DN-T1-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PML260SN,118 is determined by the following critical electrical parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 200V Vdss rating to ensure safe operation in the same circuit topology without exceeding voltage stress limits.

Current Capacity: Substitute parts must support continuous drain current at or above 8.8A at 25°C to handle the same load conditions. Parts with lower current ratings may require circuit redesign.

On-State Resistance (Rds On): The maximum on-state resistance at 10V gate drive must remain within acceptable limits to preserve power dissipation characteristics and thermal performance. Rds On values between 225–294 mOhm at the specified gate voltage are acceptable within engineering tolerances.

Gate Charge (Qg): Gate charge values between 5.6–21 nC at 10V are acceptable, as they fall within the switching speed and drive circuit capability range for typical applications.

Thermal Performance: Power dissipation capability must support the thermal requirements of the application. Parts rated between 34–55W (Tc) are acceptable substitutes.

Temperature Range: All substitute parts must support the full operating temperature range of -55°C to 150°C (TJ).

Compliance & Packaging: All substitute parts must be RoHS3 compliant with MSL 1 rating. Package differences (DFN3333-8, PG-TSDSON-8, TO-252AA, PowerPAK® 1212-8) require PCB layout and thermal management evaluation.

Parameter Comparison

Engineering Selection Recommendations

BSZ22DN20NS3GATMA1 (Infineon OptiMOS™): This part is an active product with full RoHS3 compliance and MSL 1 rating. It provides 7A continuous drain current, which is 80% of the PML260SN,118 rating. The on-state resistance of 225 mOhm is lower than the original part, resulting in improved thermal performance. Gate charge is significantly reduced at 5.6 nC, enabling faster switching characteristics. The 8-PowerTDFN package requires PCB layout modification compared to the DFN3333-8. This substitute is suitable for applications where current capacity can be reduced or where improved efficiency is prioritized.

FQD12N20LTM (onsemi QFET®): This part is an active product with full RoHS3 compliance and MSL 1 rating. It provides 9A continuous drain current, exceeding the original 8.8A specification. The on-state resistance of 280 mOhm is comparable to the original part. Power dissipation capability is 55W (Tc), slightly exceeding the original 50W rating. Gate charge is higher at 21 nC, which may require drive circuit evaluation. The TO-252AA package (DPAK) is a standard surface-mount package with different thermal characteristics than the DFN3333-8. This substitute is suitable for applications requiring equivalent or higher current capacity with standard package availability.

SI7820DN-T1-GE3 (Vishay TrenchFET®): This part is an active product with full RoHS3 compliance and MSL 1 rating. It provides only 1.7A continuous drain current at 25°C (Ta), which is significantly below the 8.8A requirement of the original part. The on-state resistance of 240 mOhm is comparable, but the severely reduced current capacity makes this part unsuitable as a direct substitute for the PML260SN,118. This part is listed for reference only and is not recommended for applications requiring the full 8.8A current specification. The PowerPAK® 1212-8 package is a compact option but does not compensate for the current limitation.

Primary Recommendation: The FQD12N20LTM offers the closest electrical match with active product status, higher current capacity, and proven availability. The BSZ22DN20NS3GATMA1 is a secondary option for applications where reduced current capacity and improved efficiency are acceptable trade-offs.

Frequently Asked Questions (FAQ)

Q: Can the BSZ22DN20NS3GATMA1 be used as a direct replacement for the PML260SN,118?

A: The BSZ22DN20NS3GATMA1 is electrically compatible for applications requiring up to 7A continuous drain current. The 200V Vdss rating, gate threshold voltage, and operating temperature range are identical. However, the reduced current capacity (7A vs. 8.8A) and different package (8-PowerTDFN vs. DFN3333-8) require circuit evaluation and PCB layout modification. This part is suitable for designs where current demand does not exceed 7A.

Q: What are the package compatibility considerations?

A: The PML260SN,118 uses an 8-VDFN Exposed Pad (DFN3333-8) package. Substitute parts use different packages: BSZ22DN20NS3GATMA1 uses 8-PowerTDFN, FQD12N20LTM uses TO-252AA (DPAK), and SI7820DN-T1-GE3 uses PowerPAK® 1212-8. Each package has different thermal characteristics, pin layouts, and PCB footprints. PCB redesign is required for any package change. Thermal management evaluation is necessary to ensure adequate heat dissipation in the target application.

Q: Is the FQD12N20LTM suitable for all applications using the PML260SN,118?

A: The FQD12N20LTM is suitable for applications where the TO-252AA package footprint can be accommodated and where the higher gate charge (21 nC vs. 13.3 nC) does not exceed drive circuit capabilities. The 9A current rating exceeds the original specification, and the 55W power dissipation capability is adequate. The lower gate threshold voltage (2V vs. 4V) may require gate drive circuit adjustment. Electrical compatibility is confirmed; mechanical and thermal integration must be evaluated.

Q: Why is the SI7820DN-T1-GE3 listed if it cannot replace the PML260SN,118?

A: The SI7820DN-T1-GE3 is listed because it shares the same 200V Vdss rating and is manufactured by a major supplier with active product status. However, the 1.7A continuous drain current rating is insufficient for applications requiring 8.8A. This part is included for reference in applications where current requirements are significantly lower or where a compact PowerPAK® 1212-8 package is essential. Direct substitution is not recommended.

Q: Are all substitute parts RoHS3 compliant and MSL 1 rated?

A: Yes. All three substitute parts (BSZ22DN20NS3GATMA1, FQD12N20LTM, and SI7820DN-T1-GE3) are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the compliance profile of the original PML260SN,118.

Q: What is the impact of different on-state resistance values on circuit performance?

A: On-state resistance directly affects power dissipation and thermal performance. The PML260SN,118 has 294 mOhm at 10V. Substitute parts range from 225–280 mOhm, all within acceptable engineering tolerance. Lower Rds On values (BSZ22DN20NS3GATMA1 at 225 mOhm) result in reduced power dissipation and improved efficiency. Higher values (FQD12N20LTM at 280 mOhm) are comparable to the original. Circuit thermal analysis should confirm that power dissipation remains within design limits.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The PML260SN,118 has 13.3 nC at 10V. The BSZ22DN20NS3GATMA1 has significantly lower gate charge (5.6 nC), enabling faster switching and reduced drive circuit power consumption. The FQD12N20LTM has higher gate charge (21 nC), requiring more drive energy but remaining within typical gate driver capabilities. Gate charge differences do not prevent substitution but should be evaluated for switching frequency and drive circuit performance.

Q: Can the substitute parts handle the full -55°C to 150°C operating temperature range?

A: Yes. All substitute parts are rated for the identical -55°C to 150°C (TJ) operating temperature range as the original PML260SN,118. Temperature performance is fully compatible across all candidates.