PMGD175XNEAX Equivalent & Substitute Parts

Part Overview

The PMGD175XNEAX is a dual N-channel MOSFET array manufactured by Nexperia USA Inc., designed for surface mount applications in 6-TSSOP packaging. This component features a 30V drain-to-source voltage rating with 900mA continuous drain current capability and 390mW maximum power dissipation. The device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and package form factor. The PMGD175XNEAX serves applications requiring dual N-channel switching functionality in compact surface mount configurations.

Substiute Parts

PMGD175XNEAX
Nexperia USA Inc.In Stock: 899PMGD175XNEAX Datasheet
PMGD175XNEAX
Current Part
DMN3190LDW-7
Diodes IncorporatedIn Stock: 16897DMN3190LDW-7 Datasheet
DMN3190LDW-7
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 900 mA
Rds On (Max) @ Id, Vgs 252 @ 900mA, 4.5V mOhm
Vgs(th) (Max) @ Id 1.25 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 1.65 @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 81 @ 15V pF
Power - Max 390 mW
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual)
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the PMGD175XNEAX are identified based on strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss) rating of 30V or greater
  • Continuous drain current (Id) capability of 900mA or greater at 25°C
  • On-resistance (Rds On) characteristics compatible with application requirements
  • Dual N-channel configuration
  • Operating temperature range spanning -55°C to 150°C

Mechanical Equivalence Criteria:

  • Surface mount technology
  • Package compatibility: 6-TSSOP, SC-88, or SOT-363 form factors
  • Pin configuration supporting dual N-channel topology

Compliance Equivalence Criteria:

  • RoHS3 compliance status
  • Moisture Sensitivity Level (MSL) rating of 1 or equivalent
  • Active product status

The DMN3190LDW-7 manufactured by Diodes Incorporated meets all substitution criteria through equivalent voltage and current ratings, compatible package specifications, and matching compliance certifications.

Parameter Comparison

Parameter PMGD175XNEAX (Nexperia) DMN3190LDW-7 (Diodes Inc.) Unit
Manufacturer Nexperia USA Inc. Diodes Incorporated
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30 30 V
Current - Continuous Drain (Id) @ 25°C 900 1000 mA
Rds On (Max) @ Id, Vgs 252 @ 900mA, 4.5V 190 @ 1.3A, 10V mOhm
Vgs(th) (Max) @ Id 1.25 @ 250µA 2.8 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 1.65 @ 4.5V 2 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 81 @ 15V 87 @ 20V pF
Power - Max 390 320 mW
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

Both the PMGD175XNEAX and DMN3190LDW-7 are Active product status components with full RoHS3 compliance and unlimited moisture sensitivity ratings (MSL 1). Both devices support identical operating temperature ranges (-55°C to 150°C) and are packaged in compatible 6-TSSOP/SOT-363 form factors suitable for surface mount assembly.

The DMN3190LDW-7 provides higher continuous drain current capability (1A versus 900mA) and lower on-resistance characteristics (190mOhm versus 252mOhm at respective rated conditions), offering enhanced performance headroom in applications requiring maximum current delivery. The PMGD175XNEAX maintains lower gate charge (1.65nC versus 2nC) and lower threshold voltage (1.25V versus 2.8V), which may be advantageous in applications with limited gate drive capability.

Selection between these parts depends on application-specific requirements for current capacity, switching speed, and gate drive characteristics. Both components satisfy the core electrical and mechanical substitution criteria for dual N-channel MOSFET array applications in 30V systems.

Frequently Asked Questions (FAQ)

Q: Can the DMN3190LDW-7 directly replace the PMGD175XNEAX in existing designs?

A: Yes. Both components share identical voltage ratings (30V Vdss), compatible package specifications (6-TSSOP/SOT-363), dual N-channel configuration, and matching compliance certifications (RoHS3, MSL 1). Pin-to-pin compatibility exists within the specified package families. The DMN3190LDW-7 provides higher current capability (1A versus 900mA), making it suitable for applications requiring equal or greater current performance.

Q: What are the key electrical differences between these parts?

A: The DMN3190LDW-7 features higher continuous drain current (1A versus 900mA) and lower on-resistance (190mOhm versus 252mOhm at respective test conditions). The PMGD175XNEAX exhibits lower gate charge (1.65nC versus 2nC) and lower threshold voltage (1.25V versus 2.8V). These differences affect switching speed and gate drive requirements but do not prevent substitution in applications designed for the PMGD175XNEAX specifications.

Q: Are package dimensions identical between these parts?

A: Both components are specified for 6-TSSOP, SC-88, and SOT-363 package families. These designations refer to the same physical form factor with identical pin spacing and footprint dimensions, ensuring direct mechanical compatibility on printed circuit boards.

Q: Do both parts meet the same compliance and environmental standards?

A: Yes. Both the PMGD175XNEAX and DMN3190LDW-7 are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity ratings. Both support the full operating temperature range of -55°C to 150°C (junction temperature). Both are classified as Active product status.

Q: Which part should be selected for new designs?

A: Selection depends on application requirements. The DMN3190LDW-7 is suitable for applications requiring maximum current delivery and lower on-resistance. The PMGD175XNEAX is appropriate for applications with lower current requirements or where lower gate charge and threshold voltage characteristics are beneficial. Both parts are Active status and equally suitable for new design implementations.

Q: What is the significance of the different Rds On test conditions?

A: The PMGD175XNEAX specifies Rds On at 900mA and 4.5V gate-source voltage, while the DMN3190LDW-7 specifies it at 1.3A and 10V. These represent the manufacturers' standard test conditions for their respective devices. The DMN3190LDW-7's lower on-resistance value reflects measurement at higher gate drive voltage and current, which is typical for logic-level gate devices. Both values are valid for their respective parts and do not prevent substitution.

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