PMGD130UN,115 Equivalent & Substitute Parts

Part Overview

The PMGD130UN,115 is a dual N-channel MOSFET array manufactured by NXP USA Inc., designed for surface mount applications in 6-TSSOP packaging. This component integrates two N-channel MOSFETs with logic level gate drive capability, rated for 20V drain-source voltage and 1.2A continuous drain current. The device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Configuration	2 N-Channel (Dual)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	1.2	A
Rds On (Max) @ Id, Vgs	145	mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.3	nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	83	pF @ 10V
Power - Max	390	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution of the PMGD130UN,115 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Configuration: Dual N-channel MOSFET array
Drain-Source Voltage (Vdss): 20V minimum rating
Continuous Drain Current (Id): 1.2A minimum at 25°C
Gate Drive: Logic level gate capability
Operating Temperature Range: -55°C to 150°C

Mechanical Compatibility Criteria:

Package Type: 6-TSSOP, SC-88, or SOT-363 surface mount packages
Pin Configuration: Compatible pinout for dual N-channel configuration

The FDG1024NZ from onsemi meets all electrical and mechanical substitution criteria. Both devices share identical voltage ratings, current ratings, gate threshold specifications, and operating temperature ranges. Package compatibility is confirmed through equivalent 6-TSSOP/SC-88/SOT-363 designations.

Parameter Comparison

Parameter	PMGD130UN,115 (NXP)	FDG1024NZ (onsemi)	Unit
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	—
Drain to Source Voltage (Vdss)	20	20	V
Current - Continuous Drain (Id) @ 25°C	1.2	1.2	A
Rds On (Max) @ Id, Vgs	145 @ 1.2A, 4.5V	175 @ 1.2A, 4.5V	mOhm
Vgs(th) (Max) @ Id	1 @ 250µA	1 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	1.3 @ 4.5V	2.6 @ 4.5V	nC
Input Capacitance (Ciss) (Max) @ Vds	83 @ 10V	150 @ 10V	pF
Power - Max	390	300	mW
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	—
FET Feature	Logic Level Gate	Logic Level Gate	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The FDG1024NZ is a direct functional substitute for the obsolete PMGD130UN,115. Both components maintain identical electrical specifications for voltage rating, current rating, and gate threshold characteristics. The FDG1024NZ is currently in active production status, ensuring long-term availability and supply chain continuity.

Both parts comply with ROHS3 requirements and carry identical REACH and ECCN classifications, confirming regulatory equivalence. The FDG1024NZ features the PowerTrench® technology series from onsemi, which provides enhanced performance characteristics within the same package footprint.

Minor parameter variations exist in gate charge (1.3nC vs. 2.6nC) and input capacitance (83pF vs. 150pF), which remain within acceptable substitution tolerances for dual N-channel MOSFET applications. The FDG1024NZ exhibits slightly higher on-resistance (175mOhm vs. 145mOhm) and lower maximum power dissipation (300mW vs. 390mW), both of which are acceptable trade-offs given the active product status and supply availability.

Frequently Asked Questions (FAQ)

Q: Can the FDG1024NZ directly replace the PMGD130UN,115 without PCB modifications?

A: Yes. Both devices use identical 6-TSSOP/SC-88/SOT-363 package designations with compatible pinouts for dual N-channel MOSFET configurations. No PCB layout changes are required.

Q: What are the key electrical differences between these two parts?

A: The primary differences are gate charge (FDG1024NZ: 2.6nC vs. PMGD130UN,115: 1.3nC) and input capacitance (FDG1024NZ: 150pF vs. PMGD130UN,115: 83pF). Both parameters remain within acceptable ranges for standard switching applications. On-resistance is slightly higher in the FDG1024NZ (175mOhm vs. 145mOhm), resulting in marginally increased power dissipation.

Q: Are there any compliance or certification differences?

A: No. Both parts are ROHS3 compliant, REACH unaffected, and classified under identical ECCN and HTSUS codes. Regulatory equivalence is confirmed.

Q: Why is the PMGD130UN,115 listed as obsolete?

A: The PMGD130UN,115 has been discontinued by NXP USA Inc. The FDG1024NZ from onsemi is the recommended active substitute, ensuring continued availability and production support.

Q: Are there any thermal or operating condition limitations I should consider?

A: Both devices operate across the identical temperature range of -55°C to 150°C (junction temperature). The FDG1024NZ has a lower maximum power rating (300mW vs. 390mW), which should be verified against your specific application's thermal requirements.

Q: What is the difference between the 6-TSSOP and SC-88 package designations?

A: These are equivalent designations for the same physical package. SC-88 is an alternative naming convention for the 6-TSSOP surface mount package. Both parts support this package type.

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