PMDPB80XP,115 Equivalent & Substitute Parts

Part Overview

The PMDPB80XP,115 is a dual P-channel MOSFET array manufactured by Nexperia USA Inc., designed for surface mount applications in logic-level gate drive circuits. This component features a 20V drain-to-source voltage rating with 2.7A continuous drain current capability and is housed in a 6-HUSON (2x2) package. The device is actively produced and maintains full RoHS3 compliance with unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified when equivalent electrical performance, package compatibility, and regulatory compliance align with application requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	2.7	A
On-Resistance (Rds On) @ Id, Vgs	102 mOhm @ 2.7A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1	V @ 250µA
Gate Charge (Qg) @ Vgs	8.6	nC @ 4.5V
Input Capacitance (Ciss) @ Vds	550	pF @ 10V
Maximum Power Dissipation	485	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)	—
Package Type	6-UFDFN Exposed Pad	—
FET Feature	Logic Level Gate, 1.8V Drive	—

Substitute Part Grouping Explanation

Substitution eligibility for the PMDPB80XP,115 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 20V
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance
MSL Rating: 1 (Unlimited)

Allowable Variation Parameters:

Continuous Drain Current (Id): Equal to or greater than 2.7A
On-Resistance (Rds On): Equal to or lower than 102 mOhm
Gate Charge (Qg): Equal to or lower than 8.6 nC
Input Capacitance (Ciss): Within ±10% of 550 pF
Maximum Power Dissipation: Equal to or greater than 485 mW
Package footprint: 6-pin UFDFN or 6-pin WDFN (both 2x2 form factor)

The identified substitute parts meet or exceed the electrical performance specifications of the main part while maintaining full regulatory compliance and thermal operating range compatibility.

Parameter Comparison

Parameter	PMDPB80XP,115 (Nexperia)	FDMA1029PZ (onsemi)	NTLJD3115PT1G (onsemi)
Manufacturer	Nexperia USA Inc.	onsemi	onsemi
Drain to Source Voltage (Vdss)	20V	20V	20V
Continuous Drain Current (Id) @ 25°C	2.7A	3.1A	2.3A
Rds On (Max) @ Id, Vgs	102 mOhm @ 2.7A, 4.5V	95 mOhm @ 3.1A, 4.5V	100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA	1.5V @ 250µA	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.6 nC @ 4.5V	10 nC @ 4.5V	6.2 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 10V	540 pF @ 10V	531 pF @ 10V
Power - Max	485 mW	700 mW	710 mW
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)
Package / Case	6-UFDFN Exposed Pad	6-WDFN Exposed Pad	6-WDFN Exposed Pad
FET Feature	Logic Level Gate, 1.8V Drive	Logic Level Gate	Logic Level Gate
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

FDMA1029PZ (onsemi) is suitable as a substitute when higher current capacity is required. This part delivers 3.1A continuous drain current compared to the 2.7A rating of the PMDPB80XP,115, with improved on-resistance of 95 mOhm. Maximum power dissipation is increased to 700 mW. The FDMA1029PZ is packaged in 6-WDFN format and maintains identical voltage rating, temperature range, and regulatory compliance. Gate charge is marginally higher at 10 nC. This substitute is appropriate for applications requiring enhanced thermal headroom or higher current throughput within the same voltage class.

NTLJD3115PT1G (onsemi) is suitable as a substitute when gate charge minimization is prioritized. This part features the lowest gate charge specification at 6.2 nC, reducing switching losses in high-frequency applications. Continuous drain current is rated at 2.3A with on-resistance of 100 mOhm at 2A, 4.5V. Maximum power dissipation is 710 mW. The NTLJD3115PT1G is packaged in 6-WDFN format and maintains identical voltage rating, temperature range, and regulatory compliance. Gate threshold voltage matches the main part at 1V. This substitute is appropriate for applications where switching speed and efficiency are critical design factors.

Both substitute parts maintain full RoHS3 compliance, unlimited MSL rating, and REACH unaffected status, ensuring regulatory compatibility with the original component. Package footprint differences (UFDFN versus WDFN) require PCB layout verification for mechanical fit.

Frequently Asked Questions (FAQ)

Q: Can FDMA1029PZ be used as a direct replacement for PMDPB80XP,115?

A: FDMA1029PZ meets all mandatory electrical and regulatory criteria for substitution. Both devices feature 20V Vdss rating, dual P-channel configuration, logic-level gate drive, identical operating temperature range (-55°C to 150°C), and full RoHS3 compliance. The primary difference is package format: FDMA1029PZ uses 6-WDFN while PMDPB80XP,115 uses 6-UFDFN. PCB layout compatibility must be verified before implementation.

Q: What are the key differences between NTLJD3115PT1G and PMDPB80XP,115?

A: Both parts share identical 20V Vdss rating, dual P-channel configuration, and operating temperature range. NTLJD3115PT1G provides lower gate charge (6.2 nC versus 8.6 nC), which reduces switching losses in high-frequency circuits. Continuous drain current is lower at 2.3A compared to 2.7A. On-resistance is comparable at 100 mOhm. Package format differs: NTLJD3115PT1G uses 6-WDFN versus 6-UFDFN for the main part.

Q: Are package differences between UFDFN and WDFN critical for substitution?

A: Package footprint differences require PCB layout verification. Both UFDFN and WDFN are 6-pin exposed pad packages in 2x2 form factor, but pin spacing and pad geometry may differ. Physical fit on existing PCB layouts must be confirmed before component selection. Thermal performance characteristics may also vary between package types.

Q: Do all substitute parts maintain the same regulatory compliance as PMDPB80XP,115?

A: Yes. Both FDMA1029PZ and NTLJD3115PT1G are RoHS3 compliant, carry MSL rating of 1 (Unlimited), and maintain REACH unaffected status. All three parts share identical ECCN (EAR99) and HTSUS (8541.21.0095) classifications.

Q: Which substitute part is better for high-current applications?

A: FDMA1029PZ is rated for 3.1A continuous drain current, exceeding the 2.7A rating of PMDPB80XP,115. This part also features lower on-resistance (95 mOhm) and higher maximum power dissipation (700 mW), making it suitable for applications requiring enhanced current handling capability.

Q: Which substitute part minimizes switching losses?

A: NTLJD3115PT1G features the lowest gate charge specification at 6.2 nC, compared to 8.6 nC for PMDPB80XP,115. Lower gate charge reduces switching energy losses, making this part suitable for high-frequency switching applications where efficiency is critical.

Q: Can PMDPB80XP,115 be used in place of either substitute part?

A: PMDPB80XP,115 can replace NTLJD3115PT1G in applications where the 2.7A current rating is sufficient, as it provides higher current capacity. However, PMDPB80XP,115 cannot replace FDMA1029PZ in applications specifically requiring 3.1A continuous current, as the main part is rated only for 2.7A.

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