PMDPB65UP,115 Equivalent & Substitute Parts

Part Overview

The PMDPB65UP,115 is a dual P-channel MOSFET array manufactured by NXP USA Inc., designed for surface mount applications in 6-HUSON (2x2) packaging. This component features a 20V drain-source voltage rating with 3.5A continuous drain current capability and logic level gate operation. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and maintenance applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	3.5	A
Rds On (Max) @ Id, Vgs	70 mOhm @ 1A, 4.5V	mOhm
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6	nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	380	pF @ 10V
Power - Max	520	mW
Operating Temperature (TJ)	150	°C
Configuration	2 P-Channel (Dual)	—
FET Feature	Logic Level Gate	—
Mounting Type	Surface Mount	—
Package / Case	6-UDFN Exposed Pad	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PMDPB65UP,115 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 20V
Configuration: Must be 2 P-Channel (Dual) MOSFET array
FET Feature: Must support Logic Level Gate operation
Current - Continuous Drain (Id): Must equal or exceed 3.5A at 25°C
Rds On (Max): Must not exceed 70 mOhm at specified Id and Vgs conditions
Operating Temperature: Must support minimum 150°C junction temperature

Mechanical Compatibility Requirements:

Mounting Type: Surface Mount only
Package / Case: 6-UDFN Exposed Pad or equivalent 6-pin surface mount package
Supplier Device Package: 6-HUSON (2x2) or functionally equivalent 6-pin MicroFET/UDFN packages

Compliance Requirements:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: MSL 1 (Unlimited)
REACH Status: REACH Unaffected

All substitute parts listed meet these criteria and are classified as active products, providing long-term availability and supply chain continuity.

Parameter Comparison

Parameter	PMDPB65UP,115 (Main)	PMDPB58UPE,115	DMP2160UFDB-7	FDMA1023PZ	FDMA6023PZT
Manufacturer	NXP USA Inc.	Nexperia USA Inc.	Diodes Incorporated	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Active	Active	Active	Active
Drain to Source Voltage (Vdss)	20V	20V	20V	20V	20V
Current - Continuous Drain (Id) @ 25°C	3.5A	3.6A	3.8A	3.7A	3.6A
Rds On (Max) @ Id, Vgs	70 mOhm @ 1A, 4.5V	67 mOhm @ 2A, 4.5V	70 mOhm @ 2.8A, 4.5V	72 mOhm @ 3.7A, 4.5V	60 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA	950mV @ 250µA	900mV @ 250µA	1.5V @ 250µA	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V	9.5nC @ 4.5V	6.5nC @ 4.5V	12nC @ 4.5V	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 10V	804pF @ 10V	536pF @ 10V	655pF @ 10V	885pF @ 10V
Power - Max	520mW	515mW	1.4W	700mW	700mW
Operating Temperature (TJ)	150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	6-UDFN Exposed Pad	6-UFDFN Exposed Pad	6-UDFN Exposed Pad	6-VDFN Exposed Pad	6-UDFN Exposed Pad
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: PMDPB58UPE,115 (Nexperia USA Inc.)

The PMDPB58UPE,115 is the direct successor from Nexperia USA Inc., offering active product status with extended operating temperature range (-55°C to 150°C). This part maintains electrical equivalence with marginally improved specifications: 3.6A continuous drain current, 67 mOhm Rds On, and 950mV gate threshold voltage. Packaging is identical 6-HUSON (2x2) in tape and reel format. Full ROHS3 compliance and MSL 1 rating ensure compatibility with existing assembly processes.

Secondary Substitute: DMP2160UFDB-7 (Diodes Incorporated)

The DMP2160UFDB-7 provides enhanced performance characteristics with 3.8A continuous drain current and 1.4W maximum power dissipation. Package designation is U-DFN2020-6 (Type B), functionally equivalent to the 6-UDFN standard. This part offers the highest current capability among substitutes and extended temperature range. Inventory availability is substantial at 110,200 pieces.

Tertiary Substitute: FDMA1023PZ (onsemi)

The FDMA1023PZ operates within the PowerTrench® series, delivering 3.7A continuous drain current with 700mW power rating. Package is 6-MicroFET (2x2) in 6-VDFN configuration. Extended operating temperature range and active product status support long-term supply continuity. Cut Tape and Digi-Reel® packaging options are available.

Quaternary Substitute: FDMA6023PZT (Fairchild Semiconductor)

The FDMA6023PZT is a PowerTrench® series alternative with 3.6A continuous drain current and superior Rds On specification of 60 mOhm at 3.6A, 4.5V. Operating temperature range extends to -55°C to 150°C. Package is 6-MicroFET (2x2) in 6-UDFN configuration. Active product status ensures availability.

All substitute parts maintain ROHS3 compliance, MSL 1 rating, and REACH unaffected status, ensuring regulatory and environmental compatibility with the original PMDPB65UP,115 specification.

Frequently Asked Questions (FAQ)

Q1: Can PMDPB58UPE,115 be used as a direct replacement for PMDPB65UP,115?

A: Yes. The PMDPB58UPE,115 meets all electrical and mechanical compatibility criteria. Both parts feature identical 20V Vdss rating, dual P-channel configuration, logic level gate operation, and 6-HUSON (2x2) surface mount packaging. The PMDPB58UPE,115 provides marginally improved specifications with 3.6A continuous drain current versus 3.5A, and extended operating temperature range. Rds On values are comparable at 67 mOhm versus 70 mOhm. Pin-for-pin compatibility is confirmed.

Q2: What are the key differences between the four substitute parts?

A: All four substitutes meet the minimum electrical requirements of 20V Vdss, 3.5A+ continuous drain current, and logic level gate operation. Primary differences are: (1) PMDPB58UPE,115 offers direct manufacturer succession with identical packaging; (2) DMP2160UFDB-7 provides highest current capability (3.8A) and power dissipation (1.4W); (3) FDMA1023PZ and FDMA6023PZT operate within PowerTrench® series with varying gate charge and input capacitance characteristics. Package designations vary slightly (6-HUSON, U-DFN2020-6, 6-MicroFET) but all are functionally equivalent 6-pin surface mount configurations.

Q3: Are there package compatibility concerns when substituting these parts?

A: All substitute parts use 6-pin surface mount packages (6-HUSON, 6-UDFN, 6-VDFN, U-DFN2020-6) with exposed pad configurations. Physical dimensions and pin layouts are standardized within the 6-pin MicroFET/UDFN family. PCB footprints designed for the original PMDPB65UP,115 in 6-HUSON packaging will accommodate all listed substitutes without modification. Verify specific package dimensions with manufacturer datasheets if board layout tolerances are critical.

Q4: Which substitute offers the best thermal performance?

A: The DMP2160UFDB-7 provides the highest maximum power dissipation rating at 1.4W, compared to 520mW (PMDPB65UP,115), 515mW (PMDPB58UPE,115), and 700mW (FDMA1023PZ and FDMA6023PZT). This higher power rating indicates superior thermal capability for applications requiring sustained current delivery or elevated ambient temperatures. All parts support 150°C junction temperature operation.

Q5: What compliance certifications apply to all substitute parts?

A: All substitute parts are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, and maintain REACH unaffected status. These certifications match the original PMDPB65UP,115 specification, ensuring compatibility with existing procurement, assembly, and environmental compliance requirements.

Q6: How do gate charge and input capacitance differences affect circuit performance?

A: Gate charge (Qg) and input capacitance (Ciss) values determine switching speed and gate drive requirements. The PMDPB65UP,115 specifies 6nC gate charge and 380pF input capacitance. Substitutes range from 6.5nC to 17nC gate charge and 536pF to 885pF input capacitance. Higher values require increased gate drive current and may slightly reduce switching frequency. Applications with stringent switching speed requirements should verify compatibility with existing gate drive circuits before substitution.

Q7: Is the PMDPB58UPE,115 recommended as the primary choice?

A: The PMDPB58UPE,115 is the logical primary choice due to direct manufacturer succession from NXP to Nexperia, identical packaging (6-HUSON 2x2), and active product status with extended temperature range. This part minimizes design risk and supply chain disruption. However, DMP2160UFDB-7 is preferred for applications requiring higher current capability or enhanced thermal performance.

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