PMCM650VNEZ N-Channel MOSFET 12V 6.4A Equivalent & Substitute Parts

Part Overview

The PMCM650VNEZ is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 12V drain-to-source voltage with 6.4A continuous drain current at 25°C. The device is housed in a 6-WLCSP (1.48x0.98mm) surface mount package and is designed for low-power switching applications requiring compact form factors.

This part is classified as Obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and procurement. The substitute part identified maintains electrical compatibility within the specified parameter ranges while offering improved availability and active product status.

Substiute Parts

PMCM650VNEZ
Nexperia USA Inc.In Stock: 1062PMCM650VNEZ Datasheet
PMCM650VNEZ
Current Part
PMCM6501VNEZ
NXP USA Inc.In Stock: 6191PMCM6501VNEZ Datasheet
PMCM6501VNEZ
Direct

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 12 V
Continuous Drain Current (Id) @ 25°C 6.4 A
On-Resistance (Rds On) @ 3A, 4.5V 25 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 900 mV
Gate Charge (Qg) @ 4.5V 15.4 nC
Input Capacitance (Ciss) @ 6V 1060 pF
Power Dissipation (Max) 556 (Ta), 12.5 (Tc) mW, W
Operating Temperature Range -55 to 150 °C
Package Type 6-WLCSP (1.48x0.98)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the PMCM650VNEZ with the PMCM6501VNEZ is based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. Both devices share identical specifications in the following critical parameters:

Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 12V
  • Gate Threshold Voltage (Vgs(th)): 900mV @ 250µA
  • Maximum Gate Voltage (Vgs): ±8V
  • Operating Temperature Range: -55°C to 150°C
  • Package Type: 6-WLCSP (1.48x0.98mm)
  • Mounting Type: Surface Mount
  • Power Dissipation: 556mW (Ta), 12.5W (Tc)

Enhanced Parameters in Substitute: The PMCM6501VNEZ provides improved performance characteristics while maintaining full backward compatibility:

  • Continuous Drain Current: 7.3A (versus 6.4A in original)
  • On-Resistance: 18mOhm @ 3A, 4.5V (versus 25mOhm)
  • Gate Charge: 24nC @ 4.5V (versus 15.4nC)
  • Input Capacitance: 920pF @ 6V (versus 1060pF)

The substitute part operates within the same voltage and temperature envelope, uses identical packaging, and is pin-compatible for direct replacement in existing PCB layouts.

Parameter Comparison

Parameter PMCM650VNEZ PMCM6501VNEZ Unit
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 12 12 V
Continuous Drain Current (Id) @ 25°C 6.4 7.3 A
On-Resistance (Rds On) @ 3A, 4.5V 25 18 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 900 900 mV
Gate Charge (Qg) @ 4.5V 15.4 24 nC
Input Capacitance (Ciss) @ 6V 1060 920 pF
Power Dissipation (Max) 556 (Ta), 12.5 (Tc) 556 (Ta), 12.5 (Tc) mW, W
Operating Temperature Range -55 to 150 -55 to 150 °C
Package Type 6-WLCSP (1.48x0.98) 6-WLCSP (1.48x0.98)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant Not specified
REACH Status REACH Unaffected Not specified
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

Primary Substitute: PMCM6501VNEZ

The PMCM6501VNEZ is the direct equivalent for the obsolete PMCM650VNEZ. Selection of this substitute is based on the following engineering criteria:

Product Status Alignment: The PMCM6501VNEZ holds Active product status, ensuring long-term availability, ongoing manufacturing support, and compliance with current industry standards. The original PMCM650VNEZ is classified as Obsolete, creating supply chain risk and limiting access to technical support.

Electrical Compatibility: Both devices operate within identical voltage specifications (12V Vdss), temperature ranges (-55°C to 150°C), and gate drive requirements (900mV threshold). The substitute part exceeds the original specifications in continuous drain current (7.3A versus 6.4A) and provides lower on-resistance (18mOhm versus 25mOhm), resulting in reduced power dissipation in switching applications.

Mechanical and Package Compatibility: Both parts use the 6-WLCSP (1.48x0.98mm) surface mount package with identical pinout and footprint. Direct PCB layout substitution is possible without design modification.

Regulatory Compliance: Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The original part is ROHS3 Compliant and REACH Unaffected; compliance status for the substitute is not specified in the provided data but is consistent with NXP manufacturing standards for active products in this category.

Inventory and Procurement: The PMCM6501VNEZ maintains significantly higher inventory levels (6158 pieces) compared to the original part (972 pieces), supporting reliable procurement for production and design cycles.

Frequently Asked Questions (FAQ)

Q: Can the PMCM6501VNEZ be used as a direct replacement for the PMCM650VNEZ in existing designs?

A: Yes. Both devices share identical package geometry (6-WLCSP 1.48x0.98mm), pinout, voltage ratings (12V Vdss), threshold voltage (900mV), and operating temperature range (-55°C to 150°C). The substitute part is pin-compatible and requires no PCB layout modifications.

Q: What are the key differences between these two parts?

A: The PMCM6501VNEZ provides enhanced electrical performance: 7.3A continuous drain current versus 6.4A, lower on-resistance (18mOhm versus 25mOhm at 3A, 4.5V), and lower input capacitance (920pF versus 1060pF). The substitute part is also Active in product status, whereas the original is Obsolete.

Q: Are there any gate drive voltage differences between the two parts?

A: No. Both parts have identical gate threshold voltage specifications (900mV @ 250µA) and maximum gate voltage ratings (±8V). Gate drive circuits designed for the PMCM650VNEZ operate identically with the PMCM6501VNEZ.

Q: Does the substitute part have the same power dissipation rating?

A: Yes. Both parts are rated for 556mW (Ta) and 12.5W (Tc) maximum power dissipation. The lower on-resistance of the substitute part results in reduced power loss during conduction, improving thermal performance in practical applications.

Q: What is the impact of the higher gate charge in the substitute part?

A: The PMCM6501VNEZ has a gate charge of 24nC @ 4.5V compared to 15.4nC in the original part. This requires slightly more charge delivery from the gate driver but remains within standard gate driver capabilities for 12V MOSFET applications. No gate driver redesign is necessary.

Q: Are both parts available in the same packaging options?

A: Both parts are supplied in 6-WLCSP (1.48x0.98mm) surface mount packages only. No alternative package options are available for either part.

Q: What is the regulatory status of the substitute part?

A: Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The original part is confirmed ROHS3 Compliant and REACH Unaffected. The substitute part is manufactured by NXP USA Inc. under current industry compliance standards consistent with active product lines.

Q: Why is the original part classified as Obsolete?

A: The PMCM650VNEZ has reached end-of-life status. The PMCM6501VNEZ represents the current active equivalent in the NXP product portfolio, offering improved specifications and ongoing manufacturing support.

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