PIMD3F Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PIMD3F is an active pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in a 6-TSOP surface mount package. This component integrates internal base resistors (10kΩ each) for simplified circuit design and reduced component count in switching and logic applications. The part operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 250mW power dissipation. Automotive-grade qualification (AEC-Q101) and ROHS3 compliance support deployment in regulated environments.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set, enabling design flexibility and supply chain continuity.

Substiute Parts

PIMD3F

Nexperia USA Inc.In Stock: 850PIMD3F Datasheet

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IMD10AT108

Rohm SemiconductorIn Stock: 47172IMD10AT108 Datasheet

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IMH11AT110

Rohm SemiconductorIn Stock: 62305IMH11AT110 Datasheet

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RN1602(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 9760RN1602(TE85L,F) Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the PIMD3F is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor configuration: 1 NPN, 1 PNP pre-biased dual or equivalent single-type configuration
• Voltage rating: Minimum 50V collector-emitter breakdown voltage
• Current rating: Minimum 100mA collector current capacity
• Base and emitter-base resistor values: 10kΩ nominal
• Package type: SC-74 or SOT-457 (6-pin surface mount)
• Surface mount technology compatibility
• RoHS3 compliance and automotive-grade qualification

Performance Parameters:

• DC current gain (hFE) minimum of 30 at specified test conditions
• Saturation voltage within acceptable switching performance range
• Transition frequency minimum 180MHz
• Power dissipation minimum 250mW

Substitute parts identified in this reference meet or exceed these criteria. Parts with different transistor configurations (such as dual NPN instead of NPN/PNP) are listed with explicit configuration differences noted, as they may require circuit topology adjustments.

Parameter Comparison

Engineering Selection Recommendations

IMD10AT108 (Rohm Semiconductor)

The IMD10AT108 maintains the 1 NPN, 1 PNP dual configuration of the PIMD3F with identical voltage and base resistor specifications. This part offers enhanced performance through higher transition frequency (250MHz vs. 230MHz), increased power rating (300mW vs. 250mW), and improved collector cutoff current (500nA vs. 1µA). The IMD10AT108 is available in higher inventory volume (47,100 units) and supports both standard and reduced base resistor options (10kΩ and 100Ω variants). ROHS3 compliance and unlimited MSL rating match the original part. Selection of this substitute is appropriate for applications requiring the original NPN/PNP configuration with enhanced electrical margins.

IMH11AT110 (Rohm Semiconductor)

The IMH11AT110 differs from the PIMD3F in transistor configuration, providing dual NPN instead of NPN/PNP. This part meets all voltage, current, and resistor specifications with identical DC current gain at the specified test point (30 @ 5mA, 5V). Enhanced power rating (300mW vs. 250mW) and improved transition frequency (250MHz) provide performance headroom. The dual NPN configuration requires circuit topology verification to confirm compatibility with the original design intent. This substitute is suitable for applications where dual NPN functionality satisfies the circuit requirements. High inventory availability (62,200 units) supports supply continuity.

RN1602(TE85L,F) (Toshiba Semiconductor and Storage)

The RN1602(TE85L,F) provides dual NPN configuration with matching voltage and current ratings. DC current gain specification (50 @ 10mA, 5V) exceeds the PIMD3F minimum, and transition frequency (250MHz) matches enhanced performance levels. Saturation voltage and collector cutoff current specifications indicate improved switching characteristics. The dual NPN configuration requires circuit topology assessment. Tape & Reel packaging matches the original part format. ROHS3 compliance and unlimited MSL rating are maintained. Lower inventory availability (9,669 units) compared to other substitutes may affect procurement lead times.

All substitute parts maintain surface mount compatibility, RoHS3 compliance, and unlimited moisture sensitivity rating. Selection between substitutes depends on specific circuit requirements regarding transistor configuration (NPN/PNP vs. dual NPN) and performance margin requirements.

Frequently Asked Questions (FAQ)

Q: Can the IMH11AT110 or RN1602(TE85L,F) be used as direct replacements for the PIMD3F?

A: Both parts meet the voltage, current, and resistor specifications of the PIMD3F. However, both provide dual NPN configuration instead of the original 1 NPN, 1 PNP configuration. Direct substitution requires verification that the circuit design does not depend on the PNP transistor functionality. If the circuit requires both NPN and PNP devices, the IMD10AT108 maintains the original dual configuration.

Q: What is the primary difference between the IMD10AT108 and the PIMD3F?

A: The IMD10AT108 maintains identical transistor configuration (1 NPN, 1 PNP) and electrical specifications. Key differences include higher transition frequency (250MHz vs. 230MHz), increased power rating (300mW vs. 250mW), and improved collector cutoff current (500nA vs. 1µA). The IMD10AT108 also offers optional base resistor variants (100Ω option in addition to 10kΩ).

Q: Are all substitute parts automotive-grade qualified?

A: The PIMD3F carries AEC-Q101 automotive qualification. The substitute parts (IMD10AT108, IMH11AT110, RN1602(TE85L,F)) are listed as active products with ROHS3 compliance and unlimited MSL rating. Automotive qualification status for substitute parts should be verified against specific application requirements and supplier documentation.

Q: Do all parts use the same package type?

A: All parts use SC-74 or SOT-457 package designations with 6-pin surface mount configuration. Supplier device package designations vary (6-TSOP, SMT6, SM6) but refer to equivalent physical and electrical footprints. PCB layout compatibility is maintained across all listed substitutes.

Q: What is the significance of the base resistor values?

A: The base resistor values (R1 and R2, both 10kΩ in the PIMD3F) are integrated into the pre-biased transistor package and determine the input impedance and switching characteristics. All listed substitutes maintain the 10kΩ specification for R2 (emitter-base resistor). The IMD10AT108 offers an additional 100Ω option for R1 (base resistor), which provides different biasing characteristics and should be selected based on specific circuit requirements.

Q: How do saturation voltage differences affect circuit performance?

A: The PIMD3F specifies 150mV maximum saturation voltage at 500µA base current and 10mA collector current. Substitute parts specify 300mV saturation voltage at similar or different test conditions. Lower saturation voltage (PIMD3F) provides lower on-state voltage drop and reduced power dissipation in switching applications. Higher saturation voltage (substitutes) remains within acceptable limits for most switching applications but may increase power dissipation in high-frequency or high-current scenarios. Circuit simulation or testing is appropriate when saturation voltage differences exceed application tolerances.

Q: What inventory considerations apply to these substitutes?

A: The PIMD3F has 744 units in stock. The IMD10AT108 offers significantly higher availability (47,100 units), the IMH11AT110 provides 62,200 units, and the RN1602(TE85L,F) has 9,669 units. Higher inventory availability for Rohm parts may support extended production runs and reduce procurement lead times.