PHT8N06LT,135 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PHT8N06LT,135 is an N-Channel 55V 3.5A surface mount MOSFET manufactured by NXP USA Inc. in the TrenchMOS™ series. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The part is housed in a SOT-223 (SC-73) package and operates across a temperature range of -55°C to 150°C. Substitution is required to maintain design continuity and ensure component availability for new production runs and legacy system support.

Substiute Parts

PHT8N06LT,135

NXP USA Inc.In Stock: 982PHT8N06LT,135 Datasheet

Current PartRFQ

IRFL024NTRPBF

Infineon TechnologiesIn Stock: 22345IRFL024NTRPBF Datasheet

MFR RecommendedRFQ

NTF3055-100T1G

onsemiIn Stock: 30765NTF3055-100T1G Datasheet

MFR RecommendedRFQ

STN3NF06L

STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PHT8N06LT,135 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• N-Channel FET technology (Metal Oxide MOSFET)
• Drain to Source Voltage (Vdss) rating of 55V or higher
• Continuous Drain Current (Id) capability of 3.5A or greater
• Surface mount packaging compatible with SOT-223 (TO-261-4, TO-261AA)
• Operating temperature range spanning -55°C to 150°C minimum
• RoHS3 compliance and REACH unaffected status

Secondary Compatibility Factors:

• Gate threshold voltage (Vgs(th)) within acceptable switching characteristics
• On-state resistance (Rds On) suitable for application power dissipation requirements
• Gate charge (Qg) and input capacitance (Ciss) compatible with drive circuitry

The three substitute parts listed below meet or exceed the primary criteria while maintaining electrical and mechanical compatibility with the original PHT8N06LT,135 design envelope.

Parameter Comparison

Engineering Selection Recommendations

IRFL024NTRPBF (Infineon Technologies HEXFET®)

This substitute is suitable for applications where continuous drain current requirements do not exceed 2.8A. The part maintains 55V Vdss rating and SOT-223 packaging compatibility. Product status is active with full RoHS3 compliance. Gate charge is higher at 18.3nC compared to the original 11.2nC, requiring verification of drive circuit capability. Input capacitance is reduced to 400pF, improving switching speed characteristics. Power dissipation is limited to 1.0W (Ta), restricting use to lower power applications.

NTF3055-100T1G (onsemi)

This substitute provides 60V Vdss rating, exceeding the original 55V specification, with 3.0A continuous drain current capability. The part is active and RoHS3 compliant. Operating temperature range extends to 175°C, providing enhanced thermal margin. Gate charge increases to 22nC at 10V drive voltage. On-state resistance is 110mOhm at 1.5A and 10V, higher than the original specification. Power dissipation is 1.3W (Ta). This part is suitable for applications requiring higher voltage margin and extended temperature operation.

STN3NF06L (STMicroelectronics STripFET™ II)

This substitute offers the highest continuous drain current at 4.0A (Tc), exceeding the original 3.5A specification. Vdss rating is 60V with SOT-223 packaging compatibility. Product status is active with RoHS3 compliance. Gate charge is optimized at 9nC at 5V, lower than the original 11.2nC, enabling faster switching with reduced drive circuit stress. Input capacitance is 340pF, the lowest among substitutes. Power dissipation capability is 3.3W (Tc), the highest available. This part is recommended for applications requiring maximum current handling and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the IRFL024NTRPBF replace the PHT8N06LT,135 in all applications?

A: The IRFL024NTRPBF is suitable only for applications where continuous drain current does not exceed 2.8A. If the original design requires 3.5A operation, this substitute is not appropriate. Additionally, the higher gate charge (18.3nC vs. 11.2nC) must be verified against drive circuit specifications.

Q: What is the primary advantage of the NTF3055-100T1G substitute?

A: The NTF3055-100T1G provides a higher Vdss rating (60V vs. 55V) and extended operating temperature range to 175°C. These characteristics are beneficial for applications requiring additional voltage margin or operation in elevated temperature environments.

Q: Why does the STN3NF06L have lower gate charge than the original part?

A: The STN3NF06L uses STMicroelectronics' STripFET™ II technology, which optimizes gate charge characteristics. At 9nC at 5V, this is lower than the original 11.2nC at 5V, resulting in faster switching transitions and reduced drive circuit power consumption.

Q: Are all substitute parts available in the same package as the PHT8N06LT,135?

A: Yes. All three substitute parts are housed in SOT-223 packaging (TO-261-4, TO-261AA), ensuring mechanical and pin compatibility with the original design.

Q: Which substitute part has the best thermal performance?

A: The STN3NF06L offers the highest power dissipation capability at 3.3W (Tc), making it the best choice for applications with significant thermal requirements.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All three substitute parts are RoHS3 compliant and REACH unaffected, matching the compliance status of the original PHT8N06LT,135.

Q: What should be considered when selecting between the three substitutes?

A: Selection depends on application requirements: (1) If current demand is ≤2.8A, IRFL024NTRPBF is acceptable; (2) If extended temperature operation to 175°C is required, NTF3055-100T1G is suitable; (3) If maximum current (4.0A) and thermal performance are priorities, STN3NF06L is recommended. Drive circuit compatibility with gate charge and input capacitance specifications must be verified for all selections.