PHT6N06LT,135 N-Channel MOSFET 55V 2.5A Equivalent & Substitute Parts

Part Overview

The PHT6N06LT,135 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 55V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is packaged in SOT-223 (SC-73) surface mount configuration and belongs to the TrenchMOS™ series. This part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The PHT6N06LT,135 operates across a temperature range of -55°C to 150°C and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1). The part is suitable for low-power switching applications requiring compact surface mount packaging.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	2.5	A (Ta)
On-Resistance (Rds On) @ Id, Vgs	150	mOhm @ 5A, 5V
Gate Threshold Voltage (Vgs(th)) @ Id	2	V @ 1mA
Gate Charge (Qg) @ Vgs	4.5	nC @ 5V
Input Capacitance (Ciss) @ Vds	330	pF @ 25V
Maximum Gate Voltage (Vgs)	±13	V
Power Dissipation (Max)	1.8 (Ta), 8.3 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-223 (TO-261-4, TO-261AA)	Surface Mount
RoHS Status	ROHS3 Compliant	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the PHT6N06LT,135 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥55V to maintain voltage rating compatibility
Continuous Drain Current (Id): Must be ≥2.5A to support the application current requirement
Package Type: Must be SOT-223 (TO-261-4, TO-261AA) for mechanical and thermal compatibility
On-Resistance (Rds On): Lower values indicate improved performance; values ≤160mOhm @ rated conditions are acceptable
Gate Threshold Voltage (Vgs(th)): Must be ≤2V @ specified current for compatible gate drive requirements
Operating Temperature Range: Must support -55°C to 150°C minimum

Substitute Parts Identified:

IRFL014NTRPBF (Infineon Technologies) – Active status, 55V/1.9A, RoHS3 compliant
IRLL014NTRPBF (Infineon Technologies) – Active status, 55V/2A, RoHS3 compliant
NTF3055L108T1G (onsemi) – Active status, 60V/3A, RoHS3 compliant
STN3NF06L (STMicroelectronics) – Active status, 60V/4A, RoHS3 compliant
94-3316 (Infineon Technologies) – Active status, 55V/2A, RoHS non-compliant

All substitute parts maintain SOT-223 packaging and surface mount configuration. Voltage ratings of 55V or higher satisfy the original specification. Current ratings range from 1.9A to 4A, with the 2A and 3A options providing closest alignment to the original 2.5A specification.

Parameter Comparison

Parameter	PHT6N06LT,135 (Main)	IRFL014NTRPBF	IRLL014NTRPBF	NTF3055L108T1G	STN3NF06L	94-3316
Manufacturer	NXP USA Inc.	Infineon	Infineon	onsemi	STMicroelectronics	Infineon
Vdss (V)	55	55	55	60	60	55
Id @ 25°C (A)	2.5 (Ta)	1.9 (Ta)	2 (Ta)	3 (Ta)	4 (Tc)	2 (Ta)
Rds On (mOhm)	150 @ 5A, 5V	160 @ 1.9A, 10V	140 @ 2A, 10V	120 @ 1.5A, 5V	100 @ 1.5A, 10V	140 @ 2A, 10V
Vgs(th) (V)	2 @ 1mA	4 @ 250µA	2 @ 250µA	2 @ 250µA	2.8 @ 250µA	2 @ 250µA
Qg (nC)	4.5 @ 5V	11 @ 10V	14 @ 10V	15 @ 5V	9 @ 5V	14 @ 10V
Ciss (pF)	330 @ 25V	190 @ 25V	230 @ 25V	440 @ 25V	340 @ 25V	230 @ 25V
Vgs Max (V)	±13	±20	±16	±15	±16	-
Power Dissipation (W)	1.8 (Ta), 8.3 (Tc)	1 (Ta)	1 (Ta)	1.3 (Ta)	3.3 (Tc)	-
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-
Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Non-compliant

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs):

IRLL014NTRPBF – This Infineon HEXFET® device provides the closest electrical match to the PHT6N06LT,135. It maintains 55V Vdss rating, 2A continuous drain current, and 140mOhm on-resistance at 10V gate drive. The part is active, RoHS3 compliant, and has extensive inventory availability (50,368 pcs). Operating temperature range matches the original specification (-55°C to 150°C). Gate threshold voltage of 2V @ 250µA aligns with the original design requirements.

NTF3055L108T1G – This onsemi device offers enhanced performance with 60V Vdss, 3A continuous drain current, and superior on-resistance of 120mOhm @ 1.5A, 5V. The part is active and RoHS3 compliant with strong inventory (32,200 pcs). Extended operating temperature to 175°C provides additional thermal margin. Higher current rating accommodates applications requiring increased headroom.

Secondary Substitutes (Alternative Options):

STN3NF06L – STMicroelectronics STripFET™ II device rated for 60V/4A with excellent on-resistance of 100mOhm @ 1.5A, 10V. Active status, RoHS3 compliant, with highest inventory availability (72,446 pcs). Superior power dissipation capability (3.3W @ Tc) suits applications with higher thermal demands.

IRFL014NTRPBF – Infineon HEXFET® option with 55V/1.9A rating. Active and RoHS3 compliant. Suitable for applications where the 2.5A original specification can be reduced to 1.9A without performance impact. Lower gate charge (11 nC @ 10V) reduces gate drive requirements.

Not Recommended:

94-3316 – While electrically compatible (55V/2A), this Infineon part is RoHS non-compliant, making it unsuitable for new designs or applications subject to RoHS regulations.

Frequently Asked Questions (FAQ)

Q1: Can IRFL014NTRPBF replace PHT6N06LT,135 in all applications?

A: IRFL014NTRPBF is suitable for applications where continuous drain current does not exceed 1.9A. The original PHT6N06LT,135 is rated for 2.5A, so applications requiring the full 2.5A specification should use IRLL014NTRPBF (2A) or NTF3055L108T1G (3A) instead. All three parts share SOT-223 packaging and -55°C to 150°C operating range.

Q2: What is the difference between IRLL014NTRPBF and IRFL014NTRPBF?

A: Both are Infineon HEXFET® devices in SOT-223 packaging. IRLL014NTRPBF is rated for 2A continuous drain current with 140mOhm on-resistance, while IRFL014NTRPBF is rated for 1.9A with 160mOhm on-resistance. IRLL014NTRPBF provides better current handling and lower on-resistance, making it the preferred choice for applications closer to the original 2.5A specification.

Q3: Why does NTF3055L108T1G have a higher Vdss rating (60V vs. 55V)?

A: Higher Vdss rating provides additional voltage margin and does not negatively impact circuit performance. The 60V rating ensures the device can safely operate in applications with transient overvoltage conditions. This is a beneficial characteristic for substitution, as it maintains or exceeds the original voltage specification.

Q4: Are all substitute parts RoHS3 compliant?

A: Four of the five recommended substitutes (IRFL014NTRPBF, IRLL014NTRPBF, NTF3055L108T1G, and STN3NF06L) are RoHS3 compliant. The 94-3316 is RoHS non-compliant and should not be used in applications requiring RoHS certification. The original PHT6N06LT,135 is RoHS3 compliant.

Q5: Can STN3NF06L be used in place of PHT6N06LT,135 despite higher current rating?

A: Yes. STN3NF06L is rated for 4A continuous drain current, which exceeds the original 2.5A specification. The higher current rating does not create compatibility issues; it simply provides additional design margin. The 60V Vdss, SOT-223 packaging, and -55°C to 150°C operating range are all compatible. The superior on-resistance (100mOhm) reduces power dissipation.

Q6: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects gate drive circuit requirements and switching speed. The original PHT6N06LT,135 has 4.5 nC @ 5V gate charge. Substitutes range from 9 nC to 15 nC, typically measured at 10V. Higher gate charge requires more gate drive current but does not prevent substitution. Gate drive circuits designed for the original part will function with substitute parts; however, switching speed may vary slightly.

Q7: Which substitute offers the best thermal performance?

A: STN3NF06L provides the highest power dissipation rating at 3.3W @ Tc, followed by NTF3055L108T1G at 1.3W @ Ta. Both exceed the original PHT6N06LT,135 specification (1.8W @ Ta, 8.3W @ Tc). STN3NF06L also features the lowest on-resistance (100mOhm), which directly reduces power dissipation in switching applications.

Q8: Is package compatibility guaranteed across all substitutes?

A: Yes. All substitute parts use SOT-223 packaging (TO-261-4, TO-261AA), which is mechanically and thermally compatible with the original PHT6N06LT,135. PCB footprints and thermal characteristics are equivalent. No layout modifications are required for substitution.

Q9: What inventory considerations should guide part selection?

A: STN3NF06L has the highest inventory (72,446 pcs), followed by IRLL014NTRPBF (50,368 pcs) and NTF3055L108T1G (32,200 pcs). IRFL014NTRPBF has lower availability (35,100 pcs). For long-term supply chain stability, STN3NF06L or IRLL014NTRPBF are preferred. The original PHT6N06LT,135 has limited inventory (768 pcs) due to obsolete status.

Q10: Can multiple substitute parts be used interchangeably in production?

A: Yes, provided the application current requirement does not exceed the lowest-rated substitute in use. For applications requiring ≤1.9A, all five substitutes are interchangeable. For applications requiring 1.9A to 2.5A, use IRLL014NTRPBF, NTF3055L108T1G, or STN3NF06L. Electrical parameter variations (Rds On, Qg, Ciss) are within acceptable ranges for most switching applications. Design validation is recommended for critical applications.

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