PHT11N06LT,135 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PHT11N06LT,135 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 55V drain-to-source voltage with 4.9A continuous drain current at 25°C. This device is packaged in SC-73 (SOT-223) surface mount configuration and is designed for general-purpose switching applications requiring moderate current handling and low on-resistance characteristics.

The PHT11N06LT,135 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

PHT11N06LT,135

NXP USA Inc.In Stock: 831PHT11N06LT,135 Datasheet

Current PartRFQ

IRLL2705TRPBF

Infineon TechnologiesIn Stock: 97738IRLL2705TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PHT11N06LT,135 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain a Vdss rating of 55V to ensure compatibility with the original circuit design and voltage stress limits.

Current Rating: The substitute part must support a continuous drain current (Id) at or above 4.9A at 25°C to handle the same load conditions without thermal derating.

On-Resistance Characteristic: The substitute part must achieve an Rds On specification of 40 mOhm or lower at the specified gate voltage and current conditions to maintain equivalent power dissipation and thermal performance.

Gate Threshold Voltage: The substitute part must maintain a Vgs(th) of 2V or lower to ensure proper gate drive compatibility with existing control circuits.

Package and Mounting: The substitute part must be available in SC-73 (SOT-223) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C to maintain functional equivalence across all environmental conditions.

The IRLL2705TRPBF meets these substitution criteria and is classified as an active product with current manufacturing availability.

Parameter Comparison

Engineering Selection Recommendations

The IRLL2705TRPBF is the manufacturer-recommended substitute for the obsolete PHT11N06LT,135. Both devices maintain equivalent voltage ratings (55V Vdss), gate threshold characteristics (2V Vgs(th)), and operating temperature range (-55°C to 150°C). Both are RoHS3 compliant with MSL 1 rating and REACH unaffected status, ensuring regulatory and environmental compliance equivalence.

The IRLL2705TRPBF is an active product with current manufacturing availability (97,700 pcs in stock), providing supply chain continuity for the obsolete PHT11N06LT,135.

Key differences exist in current rating and power dissipation specifications. The IRLL2705TRPBF is rated for 3.8A continuous drain current compared to 4.9A for the original part, and 1W power dissipation (Ta) compared to 1.8W. Applications operating at or below 3.8A continuous current are directly compatible. Applications requiring the full 4.9A rating must be evaluated against the substitute's lower current specification.

Gate charge differs between the two devices (17 nC @ 5V for PHT11N06LT,135 versus 48 nC @ 10V for IRLL2705TRPBF), reflecting different drive voltage specifications. Gate drive circuits must be verified for compatibility with the substitute's higher gate charge at 10V drive voltage.

Both devices are packaged in SOT-223 (SC-73) surface mount configuration, ensuring mechanical and PCB layout compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IRLL2705TRPBF directly replace the PHT11N06LT,135 in all applications?

A: Direct replacement is possible for applications operating at continuous drain currents of 3.8A or below. Applications requiring the full 4.9A rating of the original part must be re-evaluated against the substitute's 3.8A specification. Thermal analysis should be performed to confirm adequate heat dissipation with the substitute's lower power dissipation rating (1W Ta versus 1.8W Ta).

Q: What are the gate drive voltage differences between these two devices?

A: The PHT11N06LT,135 specifies maximum Rds On at 5V gate drive voltage, while the IRLL2705TRPBF specifies maximum Rds On at 10V gate drive voltage. The substitute exhibits higher gate charge (48 nC @ 10V) compared to the original (17 nC @ 5V). Existing gate drive circuits must be verified to ensure they can supply the required gate charge at the appropriate voltage levels.

Q: Are the packages mechanically identical?

A: Both devices are packaged in SOT-223 (SC-73) surface mount configuration. Pin assignments and PCB footprints are compatible, allowing direct PCB layout reuse without modification.

Q: What compliance certifications apply to the substitute part?

A: The IRLL2705TRPBF is RoHS3 compliant, MSL 1 rated (unlimited moisture sensitivity), and REACH unaffected, matching the compliance profile of the original PHT11N06LT,135.

Q: Why is the substitute part rated for lower continuous current?

A: The IRLL2705TRPBF is rated for 3.8A continuous drain current at 25°C, compared to 4.9A for the original part. This reflects the electrical design and thermal characteristics of the Infineon HEXFET technology versus the NXP TrenchMOS technology. Applications must be evaluated to confirm operation within the substitute's current rating.

Q: Is the substitute part actively manufactured?

A: Yes. The IRLL2705TRPBF is classified as an active product with current manufacturing availability, providing long-term supply continuity compared to the obsolete PHT11N06LT,135.