PEMT1,315 Equivalent & Substitute Parts

Part Overview

The PEMT1,315 is a dual PNP bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc., housed in a SOT-666 surface mount package. This component is rated for 40V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation. The device operates at frequencies up to 100MHz with a minimum DC current gain of 120 at 1mA collector current and 6V collector-emitter voltage.

The PEMT1,315 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives that meet the same electrical and mechanical specifications for ongoing production and maintenance applications.

Substiute Parts

PEMT1,315
Nexperia USA Inc.In Stock: 8855PEMT1,315 Datasheet
PEMT1,315
Current Part
BC857BV-7
Diodes IncorporatedIn Stock: 4171BC857BV-7 Datasheet
BC857BV-7
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BC857BV-TP
Micro Commercial CoIn Stock: 58464BC857BV-TP Datasheet
BC857BV-TP
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MMDT3906V-TP
Micro Commercial CoIn Stock: 702MMDT3906V-TP Datasheet
MMDT3906V-TP
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MMDT3906VC-7
Diodes IncorporatedIn Stock: 16060MMDT3906VC-7 Datasheet
MMDT3906VC-7
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NST3906DXV6T1G
onsemiIn Stock: 2231NST3906DXV6T1G Datasheet
NST3906DXV6T1G
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NSVT30010MXV6T1G
onsemiIn Stock: 8968NSVT30010MXV6T1G Datasheet
NSVT30010MXV6T1G
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Key Parameters

Parameter Value Unit
Transistor Type 2 PNP (Dual)
Collector Current (Max) 100 mA
Collector-Emitter Breakdown Voltage (Max) 40 V
Vce Saturation (Max) 200 mV @ 5mA, 50mA
Power Dissipation (Max) 300 mW
Transition Frequency 100 MHz
DC Current Gain (hFE Min) 120 @ 1mA, 6V
Package Type SOT-666 Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the PEMT1,315 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor configuration: Dual PNP array
  • Collector current rating: Minimum 100mA
  • Collector-emitter breakdown voltage: Minimum 40V
  • Surface mount package compatibility: SOT-563 or SOT-666
  • RoHS3 compliance and MSL Level 1 rating

Substitution Logic:

Substitute parts are grouped into two categories based on electrical performance relative to the PEMT1,315:

Category A - Direct Electrical Equivalents (100mA, 40V-45V): Parts BC857BV-7 and BC857BV-TP maintain the 100mA collector current specification and meet or exceed the 40V breakdown voltage requirement (45V rating). These parts are pin-compatible and operate within the same frequency range (100MHz). Both are Active product status, providing long-term availability.

Category B - Enhanced Performance Alternatives (200mA, 40V, 250MHz): Parts MMDT3906V-TP, MMDT3906VC-7, and NST3906DXV6T1G provide doubled collector current capability (200mA) while maintaining 40V breakdown voltage and increasing transition frequency to 250MHz. These parts are suitable for applications requiring higher current handling or faster switching performance. NST3906DXV6T1G additionally provides 500mW power dissipation versus 150mW in other Category B parts.

Category C - Lower Voltage Alternative (30V, 100mA): Part NSVT30010MXV6T1G operates at reduced breakdown voltage (30V) but maintains 100mA collector current and 100MHz frequency. This part is suitable only for applications with maximum operating voltages below 30V.

All substitute parts maintain SOT-563 or SOT-666 package compatibility, RoHS3 compliance, and MSL Level 1 moisture sensitivity rating.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) Max V Vce Sat mV Power mW fT MHz hFE Min Package Status
PEMT1,315 Nexperia USA Inc. 100 40 200 @ 5mA, 50mA 300 100 120 @ 1mA, 6V SOT-666 Not For New Designs
BC857BV-7 Diodes Incorporated 100 45 400 @ 5mA, 100mA 150 100 220 @ 2mA, 5V SOT-563 Active
BC857BV-TP Micro Commercial Co 100 45 400 @ 5mA, 100mA 150 100 200 @ 2mA, 5V SOT-563 Active
MMDT3906V-TP Micro Commercial Co 200 40 400 @ 5mA, 50mA 150 250 100 @ 10mA, 1V SOT-563 Active
MMDT3906VC-7 Diodes Incorporated 200 40 400 @ 5mA, 50mA 150 250 100 @ 10mA, 1V SOT-563 Active
NST3906DXV6T1G onsemi 200 40 400 @ 5mA, 50mA 500 250 100 @ 10mA, 1V SOT-563 Active
NSVT30010MXV6T1G onsemi 100 30 600 @ 5mA, 100mA 500 100 420 @ 2mA, 5V SOT-563 Active

Engineering Selection Recommendations

For Direct Replacement (Pin-Compatible, Same Current Rating):

BC857BV-7 (Diodes Incorporated) and BC857BV-TP (Micro Commercial Co) are the primary direct substitutes for the PEMT1,315. Both parts maintain 100mA collector current specification, 100MHz transition frequency, and dual PNP configuration. Both are Active product status with established long-term availability. BC857BV-TP offers higher inventory (58,400 pcs) compared to BC857BV-7 (4,100 pcs). Both parts are RoHS3 compliant with MSL Level 1 rating.

Note: BC857BV-7 and BC857BV-TP operate at 45V breakdown voltage versus the PEMT1,315's 40V rating, providing additional voltage margin. Power dissipation is reduced to 150mW versus 300mW in the original part.

For Enhanced Performance Applications:

MMDT3906V-TP (Micro Commercial Co), MMDT3906VC-7 (Diodes Incorporated), and NST3906DXV6T1G (onsemi) provide doubled collector current capability (200mA) and increased transition frequency (250MHz). These parts maintain 40V breakdown voltage matching the PEMT1,315 specification. All three are Active product status.

NST3906DXV6T1G provides the highest power dissipation rating (500mW) among the MMDT3906 variants, suitable for applications with elevated thermal requirements. MMDT3906V-TP and MMDT3906VC-7 are rated at 150mW power dissipation.

For Lower Voltage Applications (Maximum 30V):

NSVT30010MXV6T1G (onsemi) is suitable only for applications where the maximum operating voltage does not exceed 30V. This part provides 100mA collector current matching the PEMT1,315 and offers 500mW power dissipation. The part is Active product status with RoHS3 compliance.

Compliance and Certification:

All substitute parts maintain RoHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the PEMT1,315 environmental specifications. All parts carry EAR99 ECCN classification and are REACH Unaffected.

Frequently Asked Questions (FAQ)

Q: Can BC857BV-7 or BC857BV-TP be used as direct pin-for-pin replacements for PEMT1,315?

A: Yes. Both BC857BV-7 and BC857BV-TP are functionally equivalent dual PNP transistor arrays with identical pin configuration in SOT-563 package. The PEMT1,315 is available in both SOT-563 and SOT-666 packages, and BC857 variants are available in SOT-563. Electrical parameters (100mA collector current, 100MHz frequency, dual PNP configuration) are compatible. The 45V breakdown voltage rating in BC857 variants exceeds the 40V PEMT1,315 specification, providing additional design margin.

Q: What is the difference between BC857BV-7 and BC857BV-TP?

A: Both parts are electrically identical dual PNP transistor arrays with 100mA collector current and 45V breakdown voltage. The primary difference is manufacturer: BC857BV-7 is manufactured by Diodes Incorporated (4,100 pcs inventory), while BC857BV-TP is manufactured by Micro Commercial Co (58,400 pcs inventory). BC857BV-TP offers significantly higher stock availability. DC current gain specifications differ slightly: BC857BV-7 specifies 220 hFE minimum at 2mA/5V, while BC857BV-TP specifies 200 hFE minimum at the same conditions.

Q: When should MMDT3906 variants be selected instead of BC857 variants?

A: MMDT3906 variants (MMDT3906V-TP, MMDT3906VC-7, NST3906DXV6T1G) are selected when applications require doubled collector current capability (200mA versus 100mA) or increased switching frequency (250MHz versus 100MHz). These parts maintain 40V breakdown voltage matching the PEMT1,315. Applications with higher current demands or faster switching requirements benefit from MMDT3906 selection. NST3906DXV6T1G additionally provides 500mW power dissipation for thermally demanding applications.

Q: Is NSVT30010MXV6T1G suitable as a substitute for PEMT1,315?

A: NSVT30010MXV6T1G is suitable only for applications where maximum operating voltage does not exceed 30V. This part provides 100mA collector current and 100MHz frequency matching the PEMT1,315, but the 30V breakdown voltage is 10V lower than the PEMT1,315's 40V rating. Applications operating at voltages above 30V must not use this part. For applications with 30V or lower maximum voltage, NSVT30010MXV6T1G offers 500mW power dissipation advantage.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (BC857BV-7, BC857BV-TP, MMDT3906V-TP, MMDT3906VC-7, NST3906DXV6T1G, NSVT30010MXV6T1G) are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, matching the PEMT1,315 environmental specifications.

Q: What is the inventory status of substitute parts?

A: BC857BV-TP offers the highest inventory availability (58,400 pcs). MMDT3906VC-7 provides 15,984 pcs. NSVT30010MXV6T1G provides 8,951 pcs. NST3906DXV6T1G provides 2,200 pcs. BC857BV-7 provides 4,100 pcs. MMDT3906V-TP provides the lowest inventory (667 pcs). For applications requiring immediate availability, BC857BV-TP is the recommended selection.

Q: Are BC857 and MMDT3906 parts pin-compatible?

A: Yes. Both BC857 and MMDT3906 series are dual PNP transistor arrays in SOT-563 package with identical pin configuration. The PEMT1,315 is available in SOT-666 package, which is also compatible with SOT-563 pinout. Parts are mechanically and electrically interchangeable from a pin perspective, though electrical performance characteristics differ as specified in the parameter comparison table.

Q: What is the product status of substitute parts?

A: All substitute parts carry Active product status, indicating ongoing manufacturer support and long-term availability. This contrasts with the PEMT1,315's "Not For New Designs" status, making substitute parts suitable for both new designs and ongoing production of existing applications.

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