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PEMH7,115 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts
Part Overview
The PEMH7,115 is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-666 package. This component integrates two NPN transistors with internal biasing resistors, rated for 50V collector-emitter breakdown voltage and 100mA maximum collector current with 300mW power dissipation.
The PEMH7,115 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and ongoing system support where this transistor configuration is required.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 2 NPN - Pre-Biased (Dual) | — |
| Collector Current (Ic) Maximum | 100 | mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50 | V |
| Base Resistor (R1) | 4.7 | kOhms |
| DC Current Gain (hFE) Minimum | 200 | @ 1mA, 5V |
| Vce Saturation Maximum | 100 | mV @ 250µA, 5mA |
| Power Dissipation Maximum | 300 | mW |
| Mounting Type | Surface Mount | — |
| Package Options | SOT-563, SOT-666 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the PEMH7,115 is determined by strict equivalence across the following critical parameters:
Primary Substitution Criteria:
- Transistor configuration: 2 NPN - Pre-Biased (Dual)
- Maximum collector current: 100mA
- Collector-emitter breakdown voltage: 50V
- Base resistor value: 4.7kOhms
- Surface mount packaging: SOT-563 or SOT-666
- RoHS3 compliance and MSL 1 rating
Secondary Compatibility Factors:
- DC current gain (hFE) minimum specification
- Vce saturation voltage at specified test conditions
- Power dissipation capability
- Product status (active preferred for new designs)
Substitute parts must maintain electrical equivalence within the specified operating parameters. Parts with different transistor configurations (such as mixed NPN/PNP types) are listed for reference but require circuit-level evaluation before substitution.
Parameter Comparison
| Parameter | PEMH7,115 (Nexperia) | EMH3T2R (Rohm) | NSBC143TDXV6T1G (onsemi) | RN1910FE,LF(CT (Toshiba) | RN4990FE,LF(CT (Toshiba) |
|---|---|---|---|---|---|
| Transistor Type | 2 NPN - Pre-Biased | 2 NPN - Pre-Biased | 2 NPN - Pre-Biased | 2 NPN - Pre-Biased | 1 NPN, 1 PNP - Pre-Biased |
| Ic (Max) | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA |
| Vceo (Max) | 50 V | 50 V | 50 V | 50 V | 50 V |
| R1 (Base Resistor) | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms |
| hFE (Min) | 200 @ 1mA, 5V | 100 @ 1mA, 5V | 160 @ 5mA, 10V | 120 @ 1mA, 5V | 120 @ 1mA, 5V |
| Vce Saturation (Max) | 100 mV @ 250µA, 5mA | 300 mV @ 250µA, 5mA | 250 mV @ 1mA, 10mA | 300 mV @ 250µA, 5mA | 300 mV @ 250µA, 5mA |
| Power (Max) | 300 mW | 150 mW | 500 mW | 100 mW | 100 mW |
| Frequency - Transition | — (Not specified) | 250 MHz | — (Not specified) | 250 MHz | 250 MHz, 200 MHz |
| Package (Supplier) | SOT-666 | EMT6 | SOT-563 | ES6 | ES6 |
| Product Status | Obsolete | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Primary Substitutes (Dual NPN Configuration):
The EMH3T2R (Rohm Semiconductor), NSBC143TDXV6T1G (onsemi), and RN1910FE,LF(CT (Toshiba) are direct functional equivalents maintaining the dual NPN pre-biased transistor configuration with identical base resistor values and voltage ratings. All three are active products with ROHS3 compliance and MSL 1 ratings.
EMH3T2R offers the lowest power dissipation (150mW) and is suitable for applications where thermal constraints are critical. NSBC143TDXV6T1G provides the highest power dissipation capability (500mW) for higher-current applications. RN1910FE,LF(CT balances performance with 100mW power rating and 250MHz transition frequency.
Secondary Substitute (Mixed Configuration):
RN4990FE,LF(CT contains one NPN and one PNP pre-biased transistor rather than dual NPN. This part is electrically and mechanically compatible at the component level but requires circuit-level verification to confirm functional equivalence in the target application.
Compliance and Availability:
All substitute parts maintain ROHS3 compliance, REACH unaffected status, and MSL 1 moisture sensitivity ratings. Active product status ensures long-term availability and supply chain continuity compared to the obsolete PEMH7,115.
Frequently Asked Questions (FAQ)
Q: Can the EMH3T2R directly replace the PEMH7,115 in existing designs?
A: The EMH3T2R maintains electrical equivalence across all critical parameters: dual NPN configuration, 100mA collector current, 50V breakdown voltage, and 4.7kOhm base resistor. Pin-to-pin compatibility depends on package selection (EMT6 vs. SOT-666). Physical board layout verification is required before implementation.
Q: What is the difference between the RN1910FE,LF(CT and RN4990FE,LF(CT?
A: The RN1910FE,LF(CT contains two NPN transistors with internal biasing, identical to the PEMH7,115 configuration. The RN4990FE,LF(CT contains one NPN and one PNP transistor. Both share the same base resistor value (4.7kOhms) and voltage ratings but differ in transistor type. The RN4990FE,LF(CT is suitable only for applications requiring mixed NPN/PNP functionality.
Q: Why does the NSBC143TDXV6T1G have higher power dissipation than the PEMH7,115?
A: The NSBC143TDXV6T1G is rated for 500mW maximum power dissipation compared to the PEMH7,115's 300mW. This higher rating provides additional thermal margin and does not prevent substitution; it indicates the part can handle equivalent or greater power levels without degradation.
Q: Are all substitute parts available in the same package as the PEMH7,115?
A: The PEMH7,115 uses SOT-666 packaging. Substitute parts use different supplier package designations: EMH3T2R (EMT6), NSBC143TDXV6T1G (SOT-563), RN1910FE,LF(CT (ES6), and RN4990FE,LF(CT (ES6). All are surface mount packages compatible with SOT-563 and SOT-666 footprints, but physical dimensions and pin assignments require verification against PCB layout specifications.
Q: What is the significance of the hFE (DC current gain) differences between parts?
A: The PEMH7,115 specifies hFE minimum of 200 at 1mA/5V, while substitutes range from 100 to 160 at different test conditions. Lower hFE values require higher base current to achieve saturation but do not prevent functional substitution in applications with adequate drive current. Circuit-level analysis is necessary for designs with marginal base drive specifications.
Q: Do all substitute parts meet the same compliance standards as the PEMH7,115?
A: All listed substitute parts are ROHS3 compliant, REACH unaffected, and rated MSL 1 (unlimited moisture sensitivity). Compliance certifications are equivalent across all options, supporting use in regulated industries and applications with environmental requirements.
Q: Which substitute part offers the best long-term availability?
A: All substitute parts maintain active product status with established manufacturers (Rohm, onsemi, Toshiba). RN1910FE,LF(CT shows the highest current inventory (5469 pieces) among listed options, indicating strong supply chain support. EMH3T2R and NSBC143TDXV6T1G also maintain substantial inventory levels (106,600 and 745 pieces respectively).
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