PEMH4,115 Equivalent & Substitute Parts

Part Overview

The PEMH4,115 is a pre-biased dual NPN bipolar transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-666 package. This component integrates two NPN transistors with internal base biasing resistors, rated for 50V collector-emitter breakdown voltage and 100mA maximum collector current. The device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing flexibility when the primary part becomes unavailable or when alternative suppliers are required.

Substiute Parts

PEMH4,115

Nexperia USA Inc.In Stock: 5058PEMH4,115 Datasheet

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EMH4T2R

Rohm SemiconductorIn Stock: 16295EMH4T2R Datasheet

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NSBC114TDXV6T1G

onsemiIn Stock: 4314NSBC114TDXV6T1G Datasheet

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NSBC114TDXV6T5G

onsemiIn Stock: 40308NSBC114TDXV6T5G Datasheet

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RN1911FETE85LF

Toshiba Semiconductor and StorageIn Stock: 884RN1911FETE85LF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMH4,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Transistor configuration: 2 NPN - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Collector-emitter breakdown voltage: 50V
• Base resistor value: 10kOhms
• Mounting type: Surface Mount
• RoHS3 compliance and MSL Level 1

Allowable Variations:

• Package designation (SOT-563 or SOT-666 supplier variants)
• Maximum power dissipation (equal to or greater than 300mW)
• DC current gain (hFE) specifications (different test conditions acceptable)
• Saturation voltage characteristics (within functional operating range)
• Collector cutoff current (lower values acceptable)
• Transition frequency (when specified, indicates enhanced performance)

Substitute parts must maintain electrical compatibility across all core switching and biasing parameters while supporting the same functional application requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: EMH4T2R (Rohm Semiconductor)

The EMH4T2R is the recommended substitute for new sourcing activities. This part maintains full electrical equivalence across all critical parameters: dual NPN pre-biased configuration, 100mA collector current, 50V breakdown voltage, and 10kOhms base resistor. The EMH4T2R carries Active product status, ensuring long-term availability and supply chain stability. ROHS3 compliance and MSL Level 1 rating match the original specification. The 150mW maximum power rating is lower than the PEMH4,115 (300mW); however, this is acceptable for applications within the 100mA collector current envelope. The EMH4T2R is supplied in EMT6 package format and is available in Cut Tape and Digi-Reel packaging options.

Secondary Substitute: NSBC114TDXV6T1G (onsemi)

The NSBC114TDXV6T1G provides an alternative from onsemi with Active product status. This part meets all mandatory electrical parameters and offers enhanced power dissipation capability at 500mW maximum. The SOT-563 supplier package variant differs from the PEMH4,115 SOT-666 designation but maintains mechanical compatibility within the SOT-563/SOT-666 family. ROHS3 compliance and MSL Level 1 certification are confirmed. This part is suitable for applications requiring higher power headroom or where onsemi supply chain preference is established.

Tertiary Substitute: RN1911FETE85LF (Toshiba Semiconductor and Storage)

The RN1911FETE85LF from Toshiba maintains full electrical equivalence and carries Active product status. This part features 250MHz transition frequency specification, indicating enhanced switching performance. The 100mW maximum power rating is the lowest among available substitutes and is suitable only for applications operating well below the 100mA collector current maximum. RoHS compliance is confirmed. Inventory availability is limited (787 pieces) compared to other alternatives.

Not Recommended: NSBC114TDXV6T5G (onsemi)

The NSBC114TDXV6T5G is electrically equivalent but carries Obsolete product status. This designation indicates the part is no longer manufactured or supported by onsemi. Selection of this part introduces supply chain risk and is not appropriate for new designs or long-term production requirements.

Frequently Asked Questions (FAQ)

Q: Can the EMH4T2R replace the PEMH4,115 in existing designs?

A: Yes. The EMH4T2R is electrically equivalent across all critical parameters: dual NPN pre-biased configuration, 100mA maximum collector current, 50V collector-emitter breakdown voltage, and 10kOhms base resistor. Both parts are ROHS3 compliant with MSL Level 1 rating. The primary difference is the supplier package designation (EMT6 versus SOT-666), which does not affect electrical performance or PCB footprint compatibility within the SOT-563/SOT-666 family.

Q: What is the significance of the "Not For New Designs" status on the PEMH4,115?

A: This designation indicates that Nexperia has discontinued active development and marketing of this part number. The manufacturer recommends using alternative parts for new design projects. Existing inventory may remain available, but long-term supply cannot be guaranteed. Substitution to an Active-status part such as EMH4T2R or NSBC114TDXV6T1G is appropriate for design continuity.

Q: Are there differences in saturation voltage between the PEMH4,115 and substitute parts?

A: Yes. The PEMH4,115 specifies 150mV maximum saturation voltage at 500µA base current and 10mA collector current. The EMH4T2R specifies 300mV under different test conditions (1mA base current, 10mA collector current). The NSBC114TDXV6T1G and NSBC114TDXV6T5G specify 250mV at 1mA base current and 10mA collector current. These variations reflect different measurement conditions and do not prevent functional substitution in standard switching applications. Applications requiring precise saturation voltage control should evaluate the specific test conditions provided in each datasheet.

Q: Why does the RN1911FETE85LF have a lower maximum power rating (100mW) than the PEMH4,115 (300mW)?

A: The RN1911FETE85LF is designed for lower power dissipation applications. The 100mW rating is sufficient for switching applications operating at or below 100mA collector current with typical duty cycles. Applications requiring sustained operation at maximum current and voltage simultaneously should select parts with higher power ratings such as the NSBC114TDXV6T1G (500mW) or EMH4T2R (150mW).

Q: What is the difference between SOT-563 and SOT-666 packages?

A: Both SOT-563 and SOT-666 are surface mount packages for dual transistor configurations. The PEMH4,115 is supplied in SOT-666 format, while some substitutes are supplied in SOT-563 format. Both packages are mechanically and electrically compatible within the pre-biased dual NPN transistor category. PCB footprint design should reference the specific supplier device package designation to ensure correct land pattern implementation.

Q: Can the NSBC114TDXV6T5G be used despite its Obsolete status?

A: The NSBC114TDXV6T5G is electrically equivalent to the PEMH4,115 and current inventory is available (40,200 pieces). However, Obsolete product status indicates that onsemi has discontinued manufacturing. Use of this part introduces supply chain risk for future production runs. For new designs or long-term production commitments, selection of an Active-status part (EMH4T2R or NSBC114TDXV6T1G) is recommended.

Q: Are all substitute parts RoHS compliant?

A: Yes. The PEMH4,115, EMH4T2R, NSBC114TDXV6T1G, NSBC114TDXV6T5G, and RN1911FETE85LF are all RoHS compliant. The PEMH4,115, EMH4T2R, and onsemi parts carry ROHS3 certification. The RN1911FETE85LF carries RoHS Compliant designation. All parts meet MSL Level 1 (Unlimited) moisture sensitivity requirements.

Q: What is the significance of transition frequency specification?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. The EMH4T2R and RN1911FETE85LF specify 250MHz transition frequency, indicating enhanced high-frequency performance. The PEMH4,115 does not specify transition frequency. For applications operating at frequencies below 100MHz, transition frequency specification is not a limiting factor. For high-frequency switching applications, parts with specified transition frequency provide additional performance margin.