PEMH2,115 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PEMH2,115 is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two NPN transistors with internal biasing resistors, designed for 50V operation at 100mA maximum collector current with 300mW power dissipation. The part is classified as "Not For New Designs," indicating end-of-life status. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and long-term product support where the original component is no longer recommended for new applications.

Substiute Parts

PEMH2,115

Nexperia USA Inc.In Stock: 4988PEMH2,115 Datasheet

Current PartRFQ

NSBC144EDXV6T1G

onsemiIn Stock: 8124NSBC144EDXV6T1G Datasheet

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NSBC144EDXV6T5G

onsemiIn Stock: 7093NSBC144EDXV6T5G Datasheet

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RN1904FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 4278RN1904FE,LF(CT Datasheet

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RN4984FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1025RN4984FE,LF(CT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMH2,115 is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor configuration: 2 NPN - Pre-Biased (Dual)
• Voltage rating: 50V minimum collector-emitter breakdown voltage
• Current rating: 100mA minimum collector current capacity
• Internal biasing resistors: 47kOhms base and emitter-base resistors
• DC current gain: 80 minimum at specified test conditions
• Surface mount technology with compatible package footprint

Acceptable Variation Parameters:

• Power dissipation: Substitute parts with equal or greater power rating (300mW or higher)
• Vce saturation: Substitute parts with equal or lower saturation voltage
• Collector cutoff current: Substitute parts with equal or lower cutoff current
• Transition frequency: Substitute parts with equal or higher frequency (if specified)
• Package case: SOT-563 or SOT-666 compatible footprints

Substitute parts must maintain electrical equivalence across all mandatory parameters while offering equal or improved performance in variation parameters. Product status and compliance certifications are secondary selection factors.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: NSBC144EDXV6T1G (onsemi)

The NSBC144EDXV6T1G is the preferred substitute for the PEMH2,115. This part maintains identical transistor configuration (2 NPN - Pre-Biased), voltage rating (50V), current rating (100mA), and internal biasing resistor values (47kOhms). The NSBC144EDXV6T1G offers superior performance with 500mW power dissipation (compared to 300mW), lower collector cutoff current (500nA vs. 1µA), and active product status. The SOT-563 package is mechanically compatible with SOT-666 footprints in most applications. ROHS3 compliance and MSL-1 rating match the original specification.

Secondary Substitute: RN1904FE,LF(CT (Toshiba Semiconductor and Storage)

The RN1904FE,LF(CT provides electrical equivalence with identical transistor configuration, voltage, current, and biasing resistor specifications. This part features active product status, 250MHz transition frequency capability, and improved collector cutoff current (100nA). The ES6 package is compatible with SOT-666 footprints. Power dissipation is 100mW, which is lower than the original 300mW specification; this part is suitable for applications with reduced power requirements. ROHS3 compliance and MSL-1 rating are maintained.

Tertiary Substitute: NSBC144EDXV6T5G (onsemi)

The NSBC144EDXV6T5G is electrically equivalent to NSBC144EDXV6T1G but carries obsolete product status. This part should be selected only when NSBC144EDXV6T1G availability is exhausted and long-term supply is not required. All electrical parameters and compliance certifications are identical to the active variant.

Not Recommended: RN4984FE,LF(CT (Toshiba Semiconductor and Storage)

The RN4984FE,LF(CT contains a mixed transistor configuration (1 NPN, 1 PNP - Pre-Biased) rather than the required 2 NPN configuration. This fundamental difference in transistor type makes this part unsuitable as a direct substitute for applications requiring dual NPN functionality.

Frequently Asked Questions (FAQ)

Q: Can NSBC144EDXV6T1G replace PEMH2,115 in existing designs?

A: Yes. The NSBC144EDXV6T1G maintains all mandatory electrical parameters: dual NPN pre-biased configuration, 50V voltage rating, 100mA current capacity, and 47kOhms internal biasing resistors. The SOT-563 package is mechanically compatible with SOT-666 footprints. Verify PCB layout accommodates the package transition if required.

Q: What is the difference between NSBC144EDXV6T1G and NSBC144EDXV6T5G?

A: Both parts are electrically identical with matching specifications for voltage, current, biasing resistors, and DC current gain. The primary difference is product status: NSBC144EDXV6T1G is active, while NSBC144EDXV6T5G is obsolete. Select the active variant for new inventory procurement.

Q: Why is RN4984FE,LF(CT not recommended as a substitute?

A: The RN4984FE,LF(CT contains one NPN and one PNP transistor (mixed configuration), whereas the PEMH2,115 requires two NPN transistors. This fundamental difference in transistor type prevents functional equivalence in circuits designed for dual NPN operation.

Q: Are there package compatibility concerns when substituting with Toshiba parts?

A: The Toshiba RN1904FE,LF(CT and RN4984FE,LF(CT use ES6 packaging, which is mechanically compatible with SOT-666 footprints. Verify PCB land pattern dimensions and solder pad spacing before implementation. Consult package datasheets for precise dimensional specifications.

Q: Does the lower power rating of RN1904FE,LF(CT (100mW vs. 300mW) affect substitution?

A: The RN1904FE,LF(CT power rating of 100mW is lower than the original 300mW specification. This part is suitable only for applications where actual power dissipation remains below 100mW. Verify thermal requirements and circuit operating conditions before selection. For applications requiring full 300mW capability, select NSBC144EDXV6T1G (500mW) or NSBC144EDXV6T5G (500mW).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (NSBC144EDXV6T1G, NSBC144EDXV6T5G, RN1904FE,LF(CT, and RN4984FE,LF(CT) are ROHS3 compliant with MSL-1 (Unlimited) moisture sensitivity rating, matching the original PEMH2,115 specification.

Q: What is the significance of the 250MHz transition frequency in Toshiba parts?

A: The 250MHz transition frequency specification in RN1904FE,LF(CT and RN4984FE,LF(CT indicates higher-speed switching capability compared to the original part (frequency not specified). This parameter is relevant only for high-frequency applications. For standard switching applications, this difference has no practical impact.

Q: Can I use NSBC144EDXV6T1G in high-temperature environments?

A: Thermal performance depends on PCB thermal design, ambient temperature, and actual power dissipation. The NSBC144EDXV6T1G supports 500mW power dissipation with MSL-1 rating. Consult the manufacturer's thermal characteristics and derating curves for specific temperature range applications.