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PEMH18,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts
Part Overview
The PEMH18,115 is a pre-biased dual NPN bipolar transistor manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This device integrates two NPN transistors with internal biasing resistors, designed for 50V operation with a maximum collector current of 100mA and power dissipation of 300mW.
The PEMH18,115 carries a product status designation of "Not For New Designs," indicating that Nexperia has discontinued active development and promotion of this component. Organizations currently using this part in production or maintenance applications require equivalent substitute components to ensure supply chain continuity and long-term availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 2 NPN - Pre-Biased (Dual) | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Current - Collector (Ic) (Max) | 100 | mA |
| Power - Max | 300 | mW |
| Resistor - Base (R1) | 4.7 | kOhms |
| Resistor - Emitter Base (R2) | 10 | kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 100 | mV |
| Current - Collector Cutoff (Max) | 1 | µA |
| Package / Case | SOT-666 | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the PEMH18,115 is determined by strict alignment of electrical and mechanical parameters. The following criteria establish valid substitute relationships:
Electrical Compatibility Requirements:
- Maximum collector-emitter breakdown voltage: 50V or greater
- Maximum collector current: 100mA or greater
- Maximum power dissipation: 300mW or greater
- Internal base resistor (R1): 4.7kOhms
- Internal emitter-base resistor (R2): 10kOhms
- DC current gain characteristics suitable for the specified operating point
Mechanical Compatibility Requirements:
- Surface mount packaging (SOT-563 or SOT-666)
- Pin configuration compatible with dual pre-biased transistor topology
- Moisture sensitivity level MSL 1 or equivalent
Compliance Requirements:
- RoHS3 compliance
- REACH unaffected status
- EAR99 export classification
The EMD5DXV6T5G manufactured by onsemi meets these substitution criteria with the following considerations: it provides equivalent voltage and current ratings, maintains the required internal resistor values, and is available in SOT-563 packaging. The device configuration differs in that it integrates one NPN and one PNP transistor rather than dual NPN, which affects circuit topology compatibility in applications requiring matched dual NPN operation.
Parameter Comparison
| Parameter | PEMH18,115 (Nexperia) | EMD5DXV6T5G (onsemi) | Unit |
|---|---|---|---|
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | 50 | V |
| Current - Collector (Ic) (Max) | 100 | 100 | mA |
| Power - Max | 300 | 500 | mW |
| Resistor - Base (R1) | 4.7 | 4.7, 47 | kOhms |
| Resistor - Emitter Base (R2) | 10 | 10, 47 | kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V | 80 @ 5mA, 10V / 20 @ 5mA, 10V | — |
| Vce Saturation (Max) @ Ib, Ic | 100 | 250 | mV |
| Current - Collector Cutoff (Max) | 1 | 500 | nA |
| Package / Case | SOT-666 | SOT-563 | — |
| Mounting Type | Surface Mount | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| Product Status | Not For New Designs | Obsolete | — |
Engineering Selection Recommendations
PEMH18,115 Status Consideration: The PEMH18,115 is designated "Not For New Designs" by Nexperia, indicating reduced manufacturing priority and potential future discontinuation. Existing inventory of 947 pieces provides short-term availability, but long-term supply cannot be assured.
EMD5DXV6T5G Status Consideration: The EMD5DXV6T5G carries an "Obsolete" product status from onsemi, indicating the component has been discontinued and is no longer in active production. Inventory availability of 1159 pieces represents existing stock only, with no replenishment expected.
Compliance Alignment: Both components maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification, ensuring regulatory compatibility in equivalent applications.
Substitution Feasibility: Direct substitution of the EMD5DXV6T5G for the PEMH18,115 is limited by transistor configuration differences. The PEMH18,115 provides dual NPN operation, while the EMD5DXV6T5G integrates one NPN and one PNP transistor. This configuration difference restricts substitution to applications where the PNP transistor can be utilized or left unused. Electrical parameters including voltage rating, current capacity, and internal resistor values are compatible within specified operating ranges.
Package Consideration: The PEMH18,115 uses SOT-666 packaging while the EMD5DXV6T5G uses SOT-563 packaging. Both are surface mount packages with different pin configurations and footprints, requiring PCB layout modification for physical substitution.
Frequently Asked Questions (FAQ)
Q: Can the EMD5DXV6T5G directly replace the PEMH18,115 in all applications?
A: Direct replacement is not universal. The EMD5DXV6T5G contains one NPN and one PNP transistor, whereas the PEMH18,115 contains two NPN transistors. Substitution is only valid in applications where the circuit topology accommodates the PNP transistor or where it remains unused. PCB layout modification is required due to different package footprints (SOT-563 vs. SOT-666).
Q: What are the key electrical differences between these components?
A: Both devices share identical maximum voltage (50V) and collector current (100mA) ratings. The EMD5DXV6T5G provides higher power dissipation (500mW vs. 300mW) and lower collector cutoff current (500nA vs. 1µA). Saturation voltage differs at 250mV versus 100mV. Internal resistor values are compatible at R1 = 4.7kOhms and R2 = 10kOhms.
Q: Are both components suitable for new designs?
A: Neither component is recommended for new designs. The PEMH18,115 carries "Not For New Designs" status, and the EMD5DXV6T5G is obsolete. Both components should be used only for maintenance, repair, or replacement of existing production units.
Q: What packaging considerations apply to substitution?
A: The PEMH18,115 uses SOT-666 packaging while the EMD5DXV6T5G uses SOT-563 packaging. These packages have different pin counts, spacing, and footprints. Physical substitution requires PCB redesign and revalidation of assembly processes.
Q: Do both components meet current compliance requirements?
A: Yes. Both the PEMH18,115 and EMD5DXV6T5G are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export purposes. Moisture sensitivity level is MSL 1 (unlimited) for both devices.
Q: What is the significance of the different transistor configurations?
A: The PEMH18,115 provides two independent NPN transistors with shared biasing resistors, suitable for dual-NPN applications such as differential amplifiers or push-pull drivers. The EMD5DXV6T5G provides one NPN and one PNP transistor, suitable for complementary pair applications. Circuit topology determines substitution viability.
Q: How should inventory status affect substitution decisions?
A: The PEMH18,115 has 947 pieces in stock with "Not For New Designs" status, indicating limited future availability. The EMD5DXV6T5G has 1159 pieces in stock but is obsolete with no replenishment expected. Both represent finite inventory. Long-term supply chain planning should identify alternative active components rather than relying on either substitute.
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