PEMH17,115 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PEMH17,115 is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., designed for surface mount applications in SOT-666 packaging. This component integrates two NPN transistors with internal biasing resistors, rated for 50V collector-emitter breakdown voltage and 100mA maximum collector current. The device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production continuity.

Substiute Parts

PEMH17,115

Nexperia USA Inc.In Stock: 981PEMH17,115 Datasheet

Current PartRFQ

NSBC144WDXV6T1G

onsemiIn Stock: 717NSBC144WDXV6T1G Datasheet

SimilarRFQ

RN1904FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 4278RN1904FE,LF(CT Datasheet

SimilarRFQ

RN1909FE(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 5152RN1909FE(TE85L,F) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMH17,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Transistor configuration: 2 NPN - Pre-Biased (Dual)
• Voltage rating: 50V collector-emitter breakdown minimum
• Current rating: 100mA maximum collector current
• Base resistor (R1): 47kOhms
• Emitter-base resistor (R2): 22kOhms (or 47kOhms for RN1904FE,LF(CT variant)
• Surface mount packaging capability
• RoHS3 compliance

Secondary Compatibility Factors:

• Power dissipation capability (minimum 300mW preferred)
• DC current gain characteristics
• Saturation voltage performance
• Collector cutoff current specifications

Substitute parts are grouped based on package form factor (SOT-563 or SOT-666) and electrical performance envelope. All listed substitutes maintain the core pre-biased dual NPN architecture with compatible biasing resistor networks.

Parameter Comparison

Engineering Selection Recommendations

NSBC144WDXV6T1G (onsemi) is the primary substitute for PEMH17,115 applications requiring maximum compatibility. This part maintains identical voltage and current ratings, matching base and emitter-base resistor values (47kOhms and 22kOhms respectively). The NSBC144WDXV6T1G offers enhanced power dissipation capability (500mW versus 300mW) and improved collector cutoff current performance (500nA versus 1µA). The device is available in SOT-563 package form and carries Last Time Buy status, indicating continued but limited availability. ROHS3 compliance and MSL-1 rating ensure compatibility with standard manufacturing processes.

RN1909FE(TE85L,F) (Toshiba Semiconductor and Storage) provides an active production alternative with full electrical equivalence to the PEMH17,115. This part maintains identical voltage, current, and resistor specifications (47kOhms R1, 22kOhms R2). The RN1909FE(TE85L,F) includes transition frequency specification (250MHz) and operates at reduced power dissipation (100mW). The device is supplied in ES6 package form with Tape & Reel packaging. Active product status ensures long-term availability and supply chain stability.

RN1904FE,LF(CT (Toshiba Semiconductor and Storage) serves as an alternative for applications where emitter-base resistor value of 47kOhms is acceptable. This part matches all critical voltage and current parameters and includes 250MHz transition frequency specification. The RN1904FE,LF(CT operates at 100mW power dissipation and is supplied in ES6 package form with Tape & Reel packaging. Active product status provides supply continuity.

Selection between substitute parts should prioritize RN1909FE(TE85L,F) for new designs requiring active production status and long-term availability. NSBC144WDXV6T1G remains viable for applications where SOT-563 package form is preferred and higher power dissipation capability is beneficial. All substitutes maintain RoHS3 compliance and MSL-1 moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can NSBC144WDXV6T1G directly replace PEMH17,115 in existing designs?

A: NSBC144WDXV6T1G is electrically equivalent to PEMH17,115 across all critical parameters: 50V breakdown voltage, 100mA collector current, 47kOhms base resistor, and 22kOhms emitter-base resistor. The primary difference is package form factor (SOT-563 versus SOT-666). PCB layout modification is required if the original design specifies SOT-666 footprint exclusively. Electrical performance is functionally identical.

Q: What is the difference between RN1909FE(TE85L,F) and RN1904FE,LF(CT?

A: Both Toshiba devices are pre-biased dual NPN transistors with 50V breakdown voltage and 100mA collector current. The primary distinction is the emitter-base resistor value: RN1909FE(TE85L,F) uses 22kOhms (matching PEMH17,115), while RN1904FE,LF(CT uses 47kOhms. This resistor difference affects biasing characteristics and switching behavior. RN1909FE(TE85L,F) is the preferred substitute when exact biasing network replication is required.

Q: Why does NSBC144WDXV6T1G have higher power dissipation rating (500mW) than PEMH17,115 (300mW)?

A: The 500mW rating for NSBC144WDXV6T1G reflects the thermal capability of the onsemi device and does not indicate a functional difference. Both parts operate within identical voltage and current envelopes. The higher power rating provides additional design margin and thermal headroom in applications approaching maximum current or voltage limits.

Q: Are all substitute parts RoHS3 compliant?

A: NSBC144WDXV6T1G, RN1904FE,LF(CT, and RN1909FE(TE85L,F) are all RoHS3 compliant. RN1909FE(TE85L,F) carries RoHS Compliant designation. All parts maintain MSL-1 (Unlimited) moisture sensitivity level, ensuring compatibility with standard surface mount assembly processes without special handling requirements.

Q: What package forms are available for substitute parts?

A: NSBC144WDXV6T1G is supplied in SOT-563 package form. RN1904FE,LF(CT and RN1909FE(TE85L,F) are supplied in ES6 package form. All parts support SOT-563 and SOT-666 package compatibility per datasheet specifications. PCB footprint verification is required when transitioning between package forms.

Q: Which substitute part offers the longest supply chain availability?

A: RN1909FE(TE85L,F) and RN1904FE,LF(CT carry Active product status, indicating ongoing production and long-term availability. NSBC144WDXV6T1G is designated Last Time Buy, indicating limited future availability. For new designs requiring extended production support, Toshiba devices (RN1909FE(TE85L,F) or RN1904FE,LF(CT) are recommended.

Q: Can these parts be used interchangeably in high-frequency applications?

A: RN1909FE(TE85L,F) and RN1904FE,LF(CT specify 250MHz transition frequency. PEMH17,115 and NSBC144WDXV6T1G do not provide transition frequency specifications. For applications requiring frequency response characterization above 100MHz, Toshiba devices provide documented performance. Frequency-dependent circuit behavior should be evaluated during design validation.