PEMH11,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMH11,115 is a pre-biased dual NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two NPN transistors with internal biasing resistors, designed for 50V operation at maximum 100mA collector current and 300mW power dissipation. The part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Equivalent and substitute parts are necessary for ongoing production support, design flexibility, and supply chain continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	300	mW
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150 @ 500µA, 10mA	mV
Current - Collector Cutoff (Max)	1	µA
Mounting Type	Surface Mount	—
Package / Case	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMH11,115 is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector-emitter breakdown voltage: 50V or greater
Maximum collector current: 100mA or greater
Base resistor (R1): 10kOhms (exact match required for biasing behavior)
Emitter-base resistor (R2): 10kOhms (exact match required for biasing behavior)
Power dissipation: 300mW or greater
DC current gain (hFE): minimum 30 at specified test conditions
Saturation voltage: compatible with 150mV maximum specification
Collector cutoff current: 1µA or less

Mechanical Compatibility Criteria:

Surface mount technology
Package options: SOT-563 or SOT-666 (both acceptable for circuit board layout compatibility)
Moisture sensitivity level: 1 (Unlimited)
RoHS3 compliance required

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all internal resistor values and electrical specifications) and Functional Equivalents (meeting electrical performance requirements with alternative internal resistor configurations or enhanced specifications).

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter-Base) kOhms	hFE (Min) @ Test Condition	Vce Sat (Max) mV	Power (Max) mW	Package	RoHS3
PEMH11,115	Nexperia USA Inc.	Not For New Designs	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	300	SOT-666	Yes
NSBC114EDXV6T1G	onsemi	Active	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Yes
DDC114TH-7	Diodes Incorporated	Active	100	50	10	—	100 @ 1mA, 5V	300 @ 100µA, 1mA	150	SOT-563	Yes
DDC114YH-7	Diodes Incorporated	Active	100	50	10	47	68 @ 10mA, 5V	300 @ 250µA, 5mA	150	SOT-563	Yes
EMH11T2R	Rohm Semiconductor	Active	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	150	EMT6	Yes
NSBC114TDXV6T1G	onsemi	Active	100	50	10	—	160 @ 5mA, 10V	250 @ 1mA, 10mA	500	SOT-563	Yes
NSBC114TDXV6T5G	onsemi	Obsolete	100	50	10	—	160 @ 5mA, 10V	250 @ 1mA, 10mA	500	SOT-563	Yes
NSBC114YDXV6T1G	Fairchild Semiconductor	Active	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Yes
NSBC114YDXV6T5G	onsemi	Obsolete	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Yes
RN1902FE,LF(CT	Toshiba Semiconductor and Storage	Active	100	50	10	1	30 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Yes
RN1907FE,LF(CT	Toshiba Semiconductor and Storage	Active	100	50	10	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Yes

Engineering Selection Recommendations

Primary Substitute (Direct Electrical Equivalent):

The EMH11T2R (Rohm Semiconductor) is the closest direct equivalent to the PEMH11,115. It maintains identical internal resistor values (R1 = 10kOhms, R2 = 10kOhms), matching DC current gain specification (30 @ 5mA, 5V), and equivalent saturation voltage performance (300mV @ 500µA, 10mA). The EMH11T2R is in Active product status, ensuring long-term availability. The primary difference is packaging: EMT6 versus SOT-666. Both packages are surface mount and mechanically compatible with standard PCB layouts. The EMH11T2R offers enhanced power dissipation (150mW versus 300mW), which is acceptable for applications within the original 300mW specification.

Secondary Substitutes (Functional Equivalents with Active Status):

The NSBC114EDXV6T1G (onsemi) meets all electrical requirements with identical base resistor (10kOhms) and emitter-base resistor (10kOhms) values. It provides superior power handling (500mW) and is in Active product status. The hFE specification (35 @ 5mA, 10V) is marginally higher than the original (30 @ 5mA, 5V), and saturation voltage is slightly elevated (250mV versus 150mV), but both remain within acceptable operating margins for pre-biased transistor applications. Package is SOT-563.

The NSBC114YDXV6T1G (Fairchild Semiconductor) is functionally equivalent with Active status and 500mW power rating. It features alternative emitter-base resistor value (47kOhms versus 10kOhms), resulting in different biasing characteristics (hFE = 80 @ 5mA, 10V). This part is suitable for applications where higher current gain is beneficial or where the original 10kOhms R2 value is not critical to circuit function.

Avoid:

Parts with Obsolete product status (NSBC114TDXV6T5G, NSBC114YDXV6T5G) should not be selected for new production or long-term supply commitments. The Toshiba parts (RN1902FE,LF(CT, RN1907FE,LF(CT) feature reduced power dissipation (100mW) and alternative resistor configurations, limiting their suitability as direct replacements.

All recommended substitutes maintain RoHS3 compliance, MSL Level 1 (Unlimited), and EAR99 export classification consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can the PEMH11,115 be replaced with any SOT-563 packaged pre-biased transistor?

A: No. While SOT-563 and SOT-666 are both surface mount packages, electrical compatibility requires matching internal resistor values (R1 and R2), collector current rating (100mA minimum), breakdown voltage (50V minimum), and power dissipation (300mW minimum). The internal biasing resistor network directly affects circuit behavior, making resistor values critical to substitution.

Q: What is the difference between parts with R2 = 10kOhms and R2 = 47kOhms?

A: The emitter-base resistor (R2) affects the DC current gain and biasing characteristics of the pre-biased transistor. R2 = 10kOhms (original specification) provides lower current gain and faster switching response. R2 = 47kOhms increases current gain and alters the biasing point. Selection depends on circuit requirements; they are not interchangeable without circuit analysis.

Q: Is the EMH11T2R a direct replacement for the PEMH11,115?

A: The EMH11T2R is functionally equivalent with identical internal resistor values and matching DC current gain specification. The primary difference is packaging (EMT6 versus SOT-666). Both are surface mount packages compatible with standard PCB assembly. The EMH11T2R is in Active product status, providing superior long-term availability compared to the PEMH11,115 (Not For New Designs).

Q: Why do some substitute parts have higher power ratings (500mW) than the original (300mW)?

A: Higher power ratings indicate enhanced thermal capability and do not affect electrical compatibility. A part rated for 500mW can safely operate in applications requiring 300mW. This is an advantage for reliability and thermal margin.

Q: Can I use a substitute part with different saturation voltage specifications?

A: Saturation voltage differences must be evaluated against circuit requirements. The original PEMH11,115 specifies 150mV maximum saturation voltage. Substitutes with 250mV or 300mV saturation voltage are acceptable if the circuit design tolerates this variation. Applications with tight saturation voltage requirements should verify compatibility before implementation.

Q: What does "Not For New Designs" mean for the PEMH11,115?

A: This designation indicates the manufacturer has discontinued active development and recommends customers transition to alternative parts for new designs. Existing inventory may remain available, but long-term supply is not guaranteed. Substitution is necessary for new production programs.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance, consistent with the original PEMH11,115. This ensures compatibility with environmental regulations and customer requirements across all regions.

Q: What is the significance of Moisture Sensitivity Level (MSL) 1?

A: MSL Level 1 (Unlimited) indicates the component has no moisture sensitivity restrictions. It can be stored indefinitely without special humidity control and does not require baking before soldering. All listed substitutes maintain this specification.

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