PEMD6,115 Equivalent & Substitute Parts

Part Overview

The PEMD6,115 is a pre-biased dual bipolar transistor (BJT) manufactured by Nexperia USA Inc., combining 1 NPN and 1 PNP transistor in a single SOT-666 surface mount package. This component is classified as "Not For New Designs," indicating it has reached end-of-life status. The integrated base resistor network (4.7kOhms) enables simplified circuit design for switching and logic applications. Identifying equivalent substitute parts is necessary to support existing designs, maintain production continuity, and evaluate active alternatives for new implementations.

Substiute Parts

PEMD6,115

Nexperia USA Inc.In Stock: 4789PEMD6,115 Datasheet

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EMH3T2R

Rohm SemiconductorIn Stock: 106694EMH3T2R Datasheet

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NSBC143TPDXV6T1G

onsemiIn Stock: 97455NSBC143TPDXV6T1G Datasheet

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RN1910FE(T5L,F,T)

Toshiba Semiconductor and StorageIn Stock: 960RN1910FE(T5L,F,T) Datasheet

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RN1910FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 5575RN1910FE,LF(CT Datasheet

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RN4990FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1032RN4990FE,LF(CT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMD6,115 is determined by the following critical parameters:

Transistor Configuration: The main part contains 1 NPN and 1 PNP pre-biased transistor pair. Substitutes must maintain this dual-transistor configuration to preserve circuit functionality.

Electrical Ratings: Maximum collector current (100mA), collector-emitter breakdown voltage (50V), and base resistor value (4.7kOhms) must be matched or exceeded in substitute parts.

Package Compatibility: The PEMD6,115 uses SOT-666 packaging. Substitutes may use SOT-563 or SOT-666 packages, provided pin assignments and mechanical dimensions support direct replacement or adapter compatibility.

Compliance Requirements: All substitute parts must maintain ROHS3 compliance and MSL Level 1 rating to ensure environmental and manufacturing process compatibility.

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (1 NPN, 1 PNP Configuration):

• NSBC143TPDXV6T1G (onsemi)
• RN4990FE,LF(CT (Toshiba Semiconductor and Storage)

Category B - Functional Alternatives (2 NPN Configuration):

• EMH3T2R (Rohm Semiconductor)
• RN1910FE,LF(CT (Toshiba Semiconductor and Storage)

Category A parts maintain identical transistor pair configuration. Category B parts provide 2 NPN transistors and require circuit topology evaluation for compatibility.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (1 NPN, 1 PNP Configuration):

The NSBC143TPDXV6T1G (onsemi) and RN4990FE,LF(CT (Toshiba Semiconductor and Storage) maintain the identical 1 NPN, 1 PNP pre-biased transistor configuration as the PEMD6,115. Both parts are Active products with ROHS3 compliance and MSL Level 1 rating, ensuring long-term availability and manufacturing process compatibility.

NSBC143TPDXV6T1G offers higher maximum power dissipation (500mW vs. 300mW) and lower collector cutoff current (500nA vs. 1µA), providing enhanced performance margins in power-sensitive applications. The SOT-563 package requires mechanical verification for PCB layout compatibility.

RN4990FE,LF(CT provides transition frequency specifications (250MHz, 200MHz) and lower collector cutoff current (100nA), supporting higher-speed switching applications. The ES6 package requires footprint evaluation against the original SOT-666 design.

For Alternative Configurations (2 NPN Configuration):

EMH3T2R (Rohm Semiconductor) and RN1910FE,LF(CT (Toshiba Semiconductor and Storage) provide 2 NPN pre-biased transistor pairs. These parts are suitable only for circuit designs that do not require PNP functionality. Both are Active products with full compliance certifications.

EMH3T2R offers transition frequency (250MHz) and moderate power dissipation (150mW). RN1910FE,LF(CT provides transition frequency (250MHz) and lower power dissipation (100mW) with specified collector cutoff current (100nA ICBO).

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and MSL Level 1 rating. The PEMD6,115 "Not For New Designs" status indicates end-of-life classification; active substitute parts ensure design continuity and future supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can NSBC143TPDXV6T1G directly replace PEMD6,115 in existing designs?

A: NSBC143TPDXV6T1G maintains the same 1 NPN, 1 PNP pre-biased transistor configuration, electrical ratings (100mA, 50V, 4.7kOhms base resistor), and compliance certifications. The primary difference is package type (SOT-563 vs. SOT-666). Direct replacement requires PCB footprint compatibility verification. Electrical performance is equivalent or superior.

Q: What is the key difference between Category A and Category B substitutes?

A: Category A substitutes (NSBC143TPDXV6T1G, RN4990FE,LF(CT) contain 1 NPN and 1 PNP transistor pair, matching the PEMD6,115 configuration. Category B substitutes (EMH3T2R, RN1910FE,LF(CT) contain 2 NPN transistors. Category A parts are direct functional equivalents. Category B parts require circuit topology evaluation and are suitable only for designs that do not require PNP functionality.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed are ROHS3 compliant with MSL Level 1 rating, matching the PEMD6,115 environmental and manufacturing process requirements.

Q: What is the significance of transition frequency specifications in RN4990FE,LF(CT and RN1910FE,LF(CT?

A: Transition frequency (250MHz, 200MHz) indicates the frequency at which transistor current gain drops to unity. These specifications support higher-speed switching applications. The PEMD6,115 does not specify transition frequency, indicating lower-speed operation capability. Substitutes with specified transition frequency are suitable for both low-speed and high-speed applications.

Q: How do power dissipation differences affect substitution?

A: NSBC143TPDXV6T1G (500mW) exceeds the PEMD6,115 (300mW) power rating, providing additional thermal margin. RN4990FE,LF(CT, EMH3T2R, and RN1910FE,LF(CT (100-150mW) are lower than the original specification. Substitutes with lower power ratings require thermal analysis to confirm adequate heat dissipation in the target application.

Q: What package considerations apply to substitution?

A: The PEMD6,115 uses SOT-666 packaging. NSBC143TPDXV6T1G uses SOT-563, while RN4990FE,LF(CT, EMH3T2R, and RN1910FE,LF(CT use ES6 and EMT6 packages. Package differences require PCB footprint verification, solder reflow profile compatibility assessment, and mechanical clearance confirmation before implementation.

Q: Why is the PEMD6,115 marked "Not For New Designs"?

A: "Not For New Designs" indicates end-of-life status. The part remains available from existing inventory but will not receive design support or long-term supply guarantees. Active substitute parts (all listed alternatives) are recommended for new designs to ensure sustained availability and manufacturer support.

Q: How do DC current gain (hFE) variations affect circuit performance?

A: The PEMD6,115 specifies hFE minimum of 200 @ 1mA, 5V. Substitutes range from 100 to 160 at different test conditions. Lower hFE values require higher base current to achieve saturation. Circuit designs with tight base current budgets require hFE verification. Designs with adequate base drive margin accommodate hFE variation across the substitute range.