PEMD48,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD48,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal biasing resistors for simplified circuit design and reduced component count in switching and logic applications. The part is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PEMD48,115 carries a product status of "Not For New Designs," indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active product support and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Configuration	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	300	mW
Resistor - Base (R1)	4.7kOhms, 22kOhms	—
Resistor - Emitter Base (R2)	47kOhms	—
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V / 100 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA	—
Current - Collector Cutoff (Max)	1	µA
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
Supplier Device Package	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD48,115 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Voltage rating: 50V collector-emitter breakdown minimum
Current rating: 100mA maximum collector current
Internal base and emitter-base resistor values matching or compatible with circuit design
DC current gain (hFE) specifications at specified operating points
Saturation voltage characteristics

Mechanical Compatibility Requirements:

Surface mount technology
Package compatibility: SOT-563 or SOT-666 footprints
Tape & Reel (TR) packaging for automated assembly

Regulatory and Compliance Requirements:

RoHS3 compliance
MSL Level 1 (Unlimited moisture sensitivity)
REACH unaffected status

Substitute parts must satisfy all electrical parameters within the specified operating conditions. Package variants (SOT-563 vs. SOT-666) are mechanically compatible due to shared footprint support across the product family. Product status (Active vs. Obsolete) is noted for supply chain planning but does not disqualify functional equivalence.

Parameter Comparison

Parameter	PEMD48,115	DCX144EH-7	EMD4DXV6T1G	EMD4DXV6T5G	EMD5DXV6T5G	NSBC144EPDXV6T1G	RN4984FE,LF(CT
Manufacturer	Nexperia USA Inc.	Diodes Incorporated	onsemi	onsemi	onsemi	onsemi	Toshiba Semiconductor and Storage
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Ic (Max)	100mA	100mA	100mA	100mA	100mA	100mA	100mA
Vce Breakdown (Max)	50V	50V	50V	50V	50V	50V	50V
R1 (Base Resistor)	4.7kOhms, 22kOhms	47kOhms	47kOhms, 10kOhms	47kOhms, 10kOhms	4.7kOhms, 47kOhms	47kOhms	47kOhms
R2 (Emitter-Base Resistor)	47kOhms	47kOhms	47kOhms	47kOhms	10kOhms, 47kOhms	47kOhms	47kOhms
hFE (Min) @ Ic, Vce	80 @ 5mA, 5V / 100 @ 10mA, 5V	68 @ 5mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 5mA, 10V / 20 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA	300mV @ 500µA, 10mA	250mV @ 300µA, 10mA	250mV @ 300µA, 10mA	250mV @ 300µA, 10mA	250mV @ 300µA, 10mA	300mV @ 250µA, 5mA
Icbo (Max)	1µA	500nA	500nA	500nA	500nA	500nA	100nA
Power - Max	300mW	150mW	500mW	500mW	500mW	500mW	100mW
Frequency - Transition	—	250MHz	—	—	—	—	250MHz
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Supplier Device Package	SOT-666	SOT-563	SOT-563	SOT-563	SOT-563	SOT-563	ES6
Product Status	Not For New Designs	Active	Active	Obsolete	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Recommendation: NSBC144EPDXV6T1G (onsemi)

The NSBC144EPDXV6T1G is the preferred substitute for the PEMD48,115. This part maintains active product status with continued manufacturer support and availability (3,920 pcs in stock). Electrical parameters align with the original specification: 50V breakdown voltage, 100mA collector current, 80 hFE minimum at 5mA/10V, and 250mV saturation voltage at 300µA/10mA. The 47kOhms base and emitter-base resistor configuration is compatible with applications designed for the PEMD48,115. The SOT-563 package footprint is mechanically compatible with SOT-666 designs. RoHS3 compliance and MSL Level 1 rating match the original part.

Secondary Recommendation: EMD4DXV6T1G (onsemi)

The EMD4DXV6T1G provides an alternative with enhanced power dissipation capability (500mW vs. 300mW). This part maintains active product status and offers identical electrical performance to the NSBC144EPDXV6T1G with the same resistor configuration and saturation characteristics. The increased power rating provides design margin for applications with higher thermal stress. Availability is strong (25,200 pcs in stock).

Alternative Consideration: DCX144EH-7 (Diodes Incorporated)

The DCX144EH-7 offers active product status from an alternative manufacturer with high availability (30,400 pcs in stock). This part features 250MHz transition frequency specification and lower power dissipation (150mW). The base resistor configuration differs (47kOhms only), and saturation voltage is higher (300mV at 500µA/10mA). This part is suitable for applications where the PEMD48,115's specific resistor values are not critical and where transition frequency specification is required.

Not Recommended: EMD4DXV6T5G and EMD5DXV6T5G

Both parts carry obsolete product status, indicating discontinued manufacturer support. While electrical parameters are compatible, obsolete status creates long-term supply chain risk and should be avoided for new designs or production planning.

Not Recommended: RN4984FE,LF(CT (Toshiba)

This part features significantly reduced power dissipation (100mW vs. 300mW) and lower collector cutoff current (100nA vs. 1µA). The ES6 package differs from SOT-666/SOT-563 footprints, requiring PCB redesign. Limited inventory (947 pcs) and lower power rating restrict application scope.

Frequently Asked Questions (FAQ)

Q: Can the PEMD48,115 be directly replaced with the NSBC144EPDXV6T1G without circuit modification?

A: The NSBC144EPDXV6T1G is electrically compatible with the PEMD48,115 across all specified operating parameters. Both parts feature identical voltage and current ratings, matching DC current gain specifications, and compatible internal resistor configurations. The SOT-563 package footprint is mechanically compatible with SOT-666 designs. No circuit modification is required for functional substitution.

Q: What is the significance of the different package designations (SOT-563 vs. SOT-666)?

A: SOT-563 and SOT-666 are distinct package outlines with different physical dimensions and lead configurations. However, both packages are listed as compatible for the PEMD48,115 and substitute parts, indicating that PCB footprints can accommodate either package variant. Verify PCB layout compatibility with the specific package selected from the supplier.

Q: Why does the PEMD48,115 have two different hFE specifications (80 @ 5mA, 5V and 100 @ 10mA, 5V)?

A: DC current gain (hFE) is dependent on both collector current and collector-emitter voltage. The PEMD48,115 specifies minimum hFE values at two different operating points to characterize transistor behavior across the intended operating range. Substitute parts must meet hFE specifications at their stated operating points. Verify that the selected substitute's hFE specification matches the actual operating conditions in your circuit.

Q: Are there differences in saturation voltage between the PEMD48,115 and substitute parts?

A: Yes. The PEMD48,115 specifies saturation voltage at two different bias conditions: 150mV @ 500µA/10mA and 100mV @ 250µA/5mA. Substitute parts typically specify a single saturation voltage point. The NSBC144EPDXV6T1G specifies 250mV @ 300µA/10mA, which is higher than the PEMD48,115's 150mV specification at similar bias levels. For applications sensitive to saturation voltage, verify that the substitute part's specification meets circuit requirements.

Q: What does "Not For New Designs" product status mean for the PEMD48,115?

A: "Not For New Designs" indicates that Nexperia has discontinued active development and marketing of this part number. The manufacturer no longer recommends this part for new circuit designs. Existing designs using the PEMD48,115 may continue to receive limited support, but long-term availability cannot be guaranteed. New designs should specify one of the active substitute parts listed in this reference.

Q: Can the EMD4DXV6T5G be used despite its obsolete status?

A: The EMD4DXV6T5G is electrically compatible with the PEMD48,115 and currently has inventory available (45,200 pcs). However, obsolete product status indicates that the manufacturer has discontinued this part and will not produce additional units. Use of obsolete parts is acceptable for existing production runs with confirmed inventory allocation but should be avoided for new designs or long-term production planning.

Q: How do internal resistor values affect substitution compatibility?

A: Pre-biased transistors integrate internal base and emitter-base resistors that establish the transistor's switching characteristics and bias point. The PEMD48,115 specifies base resistors of 4.7kOhms or 22kOhms with 47kOhms emitter-base resistor. Substitute parts with different resistor values (such as DCX144EH-7 with 47kOhms base resistor) may exhibit different switching speed and bias characteristics. For applications where the specific resistor values are critical to circuit performance, verify that the substitute part's resistor configuration is compatible with circuit design requirements.

Q: What is the difference between Icbo and Iceo specifications?

A: The PEMD48,115 specifies collector cutoff current (Icbo) of 1µA maximum. Substitute parts specify this parameter as either Icbo or ICBO (collector-base leakage current with emitter open). Lower cutoff current values (such as 100nA in the RN4984FE,LF(CT) indicate better leakage characteristics. For most applications, this difference is not significant, but high-impedance circuits may benefit from lower cutoff current specifications.

Q: Is transition frequency specification important for substitution?

A: Transition frequency (fT) is specified for DCX144EH-7 (250MHz) and RN4984FE,LF(CT (250MHz) but not provided for the PEMD48,115 or other onsemi substitutes. Transition frequency indicates the frequency at which current gain drops to unity and affects high-frequency switching performance. For applications operating below 100MHz, transition frequency specification is typically not a limiting factor. For high-frequency applications, select a substitute part with specified transition frequency meeting circuit requirements.

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