PEMD3,315 Equivalent & Substitute Parts

Part Overview

The PEMD3,315 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two transistors with internal biasing resistors, designed for 50V operation at maximum 100mA collector current and 300mW power dissipation. The part is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and transition to active product alternatives that maintain electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	10	kOhms
Emitter-Base Resistor (R2)	10	kOhms
DC Current Gain (hFE Min)	30 @ 5mA, 5V	—
Vce Saturation (Max)	150	mV @ 500µA, 10mA
Maximum Power Dissipation	300	mW
Mounting Type	Surface Mount	—
Package	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD3,315 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Maximum collector current: 100mA minimum
Collector-emitter breakdown voltage: 50V minimum
Base resistor (R1): 10kOhms
Emitter-base resistor (R2): 10kOhms (exact match required for this parameter)
Maximum power dissipation: 300mW minimum

Mechanical Compatibility Requirements:

Surface mount technology
Package compatibility: SOT-563 or SOT-666 acceptable

Substitute parts are grouped into two categories:

Direct Electrical Equivalents: Parts with identical transistor type (1 NPN, 1 PNP), matching base and emitter-base resistor values (10kOhms / 10kOhms), and equal or superior electrical ratings. These parts are interchangeable without circuit modification.

Functional Alternatives: Parts with different transistor configurations (2 NPN instead of 1 NPN/1 PNP) or different resistor values (R2 = 47kOhms instead of 10kOhms). These require circuit evaluation before substitution.

Obsolete Parts: Parts with "Obsolete" product status are excluded from primary recommendations but listed for reference only.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter-Base) kOhms	Power (Max) mW	Package	Product Status
PEMD3,315	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	10	10	300	SOT-666	Not For New Designs
NSBC114EPDXV6T1G	onsemi	1 NPN, 1 PNP	100	50	10	10	500	SOT-563	Active
DCX114TH-7	Diodes Incorporated	1 NPN, 1 PNP	100	50	10	—	150	SOT-563	Active
EMH11T2R	Rohm Semiconductor	2 NPN	100	50	10	10	150	EMT6	Active
NSBC114EDXV6T1G	onsemi	2 NPN	100	50	10	10	500	SOT-563	Active
NSBC114YPDXV6T1G	onsemi	1 NPN, 1 PNP	100	50	10	47	500	SOT-563	Active
NSBC114YPDXV6T5G	onsemi	1 NPN, 1 PNP	100	50	10	47	500	SOT-563	Obsolete
NSVBC114EDXV6T1G	onsemi	2 NPN	100	50	10	10	500	SOT-563	Active
RN4902FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	10	100	ES6	Active
RN4982FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	10	100	ES6	Active
RN4987FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	10	47	100	ES6	Active

Engineering Selection Recommendations

Primary Substitute (Direct Electrical Equivalent):

NSBC114EPDXV6T1G (onsemi) is the recommended primary substitute for PEMD3,315. This part maintains identical transistor configuration (1 NPN, 1 PNP), matching base and emitter-base resistor values (10kOhms / 10kOhms), and equivalent electrical ratings. The part is Active status, ROHS3 compliant, and offers superior power dissipation (500mW vs. 300mW). Package transition from SOT-666 to SOT-563 requires PCB layout verification but maintains electrical compatibility. High inventory availability (25,300 units) supports production continuity.

Secondary Substitutes (Functional Alternatives with Circuit Evaluation Required):

NSBC114EDXV6T1G (onsemi) and NSVBC114EDXV6T1G (onsemi) provide 2 NPN configuration instead of 1 NPN/1 PNP. These parts are suitable only for applications requiring dual NPN transistors. Both are Active status, ROHS3 compliant, with 500mW power rating and SOT-563 packaging.

RN4982FE,LF(CT (Toshiba Semiconductor and Storage) maintains 1 NPN/1 PNP configuration with matching resistor values (10kOhms / 10kOhms) but operates at reduced power dissipation (100mW). This part is suitable for low-power applications only. Active status, ROHS3 compliant, ES6 package.

RN4902FE,LF(CT (Toshiba Semiconductor and Storage) provides equivalent electrical specifications to RN4982FE,LF(CT with identical 1 NPN/1 PNP configuration and 10kOhms / 10kOhms resistor values. Active status, ROHS3 compliant, ES6 package, 100mW power rating.

Not Recommended:

NSBC114YPDXV6T1G (onsemi) and RN4987FE,LF(CT (Toshiba) feature modified emitter-base resistor (R2 = 47kOhms instead of 10kOhms), altering circuit biasing characteristics. These parts require circuit redesign and are not direct substitutes.

DCX114TH-7 (Diodes Incorporated) lacks specified emitter-base resistor value and operates at significantly reduced power dissipation (150mW). Substitution requires detailed circuit analysis.

EMH11T2R (Rohm Semiconductor) provides 2 NPN configuration in EMT6 package, incompatible with SOT-666 footprint. Not recommended for direct substitution.

NSBC114YPDXV6T5G (onsemi) is Obsolete status and excluded from active design use.

Frequently Asked Questions (FAQ)

Q: Can NSBC114EPDXV6T1G directly replace PEMD3,315 without circuit modification?

A: NSBC114EPDXV6T1G maintains identical electrical specifications (1 NPN/1 PNP configuration, 10kOhms base and emitter-base resistors, 50V/100mA ratings). Circuit modification is not required for electrical function. PCB layout modification is necessary due to package change from SOT-666 to SOT-563. Pin assignment compatibility must be verified against the specific application schematic.

Q: What is the difference between 1 NPN/1 PNP and 2 NPN transistor configurations?

A: PEMD3,315 contains one NPN transistor and one PNP transistor in a single package. Parts like NSBC114EDXV6T1G contain two NPN transistors. These configurations serve different circuit topologies. Substitution of 2 NPN for 1 NPN/1 PNP requires circuit redesign and is not a direct replacement.

Q: Why do some substitute parts have different emitter-base resistor values (R2)?

A: The emitter-base resistor (R2) determines the biasing characteristics and switching speed of the pre-biased transistor. PEMD3,315 specifies R2 = 10kOhms. Parts with R2 = 47kOhms (such as NSBC114YPDXV6T1G) alter the bias network and are not electrically equivalent. These parts require circuit evaluation before use.

Q: What is the significance of package type (SOT-666 vs. SOT-563)?

A: SOT-666 and SOT-563 are different surface mount package outlines with different pin configurations and footprints. While both are 6-pin packages suitable for dual transistor devices, they are not mechanically interchangeable. PCB redesign is required when transitioning between these packages. Electrical function remains equivalent if pin assignments are correctly mapped.

Q: Are Toshiba RN49xx series parts suitable replacements for PEMD3,315?

A: RN4982FE,LF(CT and RN4902FE,LF(CT maintain the 1 NPN/1 PNP configuration with matching 10kOhms resistor values. However, maximum power dissipation is reduced to 100mW compared to PEMD3,315's 300mW. These parts are suitable only for applications with power requirements below 100mW. ES6 package requires PCB layout modification.

Q: What does "Not For New Designs" status mean for PEMD3,315?

A: "Not For New Designs" indicates the part has reached end-of-life and is no longer recommended for new product development. Existing inventory may remain available, but long-term supply is not guaranteed. Active status alternatives (such as NSBC114EPDXV6T1G) should be selected for new designs to ensure supply continuity and manufacturer support.

Q: How do I verify pin compatibility when substituting between different packages?

A: Obtain the detailed pinout diagrams for both PEMD3,315 (SOT-666) and the substitute part. Map each pin function (NPN collector, NPN base, NPN emitter, PNP collector, PNP base, PNP emitter) between packages. Verify that internal resistor connections match the circuit requirements. Consult manufacturer datasheets for complete pin assignment information.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of PEMD3,315. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

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