PEMD2,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD2,115 is a pre-biased dual bipolar transistor (BJT) manufactured by Nexperia USA Inc., configured as 1 NPN and 1 PNP transistor pair in a surface mount SOT-666 package. This component integrates base biasing resistors (22kΩ each) for simplified circuit design in switching and logic applications.

The PEMD2,115 carries a product status of "Not For New Designs," indicating it is no longer recommended for new circuit development. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active or current product status from alternative manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	22	kΩ
Resistor - Emitter Base (R2)	22	kΩ
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150 @ 500µA, 10mA	mV
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD2,115 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual pair
Maximum collector current: 100 mA
Maximum collector-emitter breakdown voltage: 50 V
Base resistor value: 22 kΩ
Emitter-base resistor value: 22 kΩ
Surface mount packaging with compatible pinout

Acceptable Variations:

DC current gain (hFE) within ±15% of specified minimum
Vce saturation within ±100 mV of specified maximum
Power dissipation rating equal to or greater than 300 mW
Transition frequency (when specified) does not restrict substitution
Package variants (SOT-563, SOT-666) are mechanically compatible

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (1 NPN, 1 PNP Configuration):

NSBC124EPDXV6T1G (onsemi, Active status)
NSBC124EPDXV6T5G (onsemi, Obsolete status)
RN4983FE,LF(CT (Toshiba, Active status)

Category B - Functional Alternatives (2 NPN Configuration):

EMH1T2R (Rohm Semiconductor, Active status)
NSBC124EDXV6T5G (onsemi, Obsolete status)
NSVBC124EDXV6T1G (onsemi, Last Time Buy status)

Parameter Comparison

Parameter	PEMD2,115	NSBC124EPDXV6T1G	NSBC124EPDXV6T5G	RN4983FE,LF(CT	EMH1T2R	NSBC124EDXV6T5G	NSVBC124EDXV6T1G
Manufacturer	Nexperia USA Inc.	onsemi	onsemi	Toshiba	Rohm Semiconductor	onsemi	onsemi
Transistor Type	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN
Ic (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Vce Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	50 V	50 V
R1 (Base)	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ
R2 (Emitter-Base)	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ	22 kΩ
hFE (Min) @ Ic, Vce	60 @ 5mA, 5V	60 @ 5mA, 10V	60 @ 5mA, 10V	70 @ 10mA, 5V	56 @ 5mA, 5V	60 @ 5mA, 10V	60 @ 5mA, 10V
Vce Saturation (Max)	150 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA	300 mV @ 250µA, 5mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA
Ic Cutoff (Max)	1 µA	500 nA	500 nA	100 nA	500 nA	500 nA	500 nA
Power - Max	300 mW	500 mW	500 mW	100 mW	150 mW	500 mW	500 mW
Frequency - Transition	—	—	—	250 MHz	250 MHz	—	—
Package	SOT-666	SOT-563	SOT-563	ES6	EMT6	SOT-563	SOT-563
Product Status	Not For New Designs	Active	Obsolete	Active	Active	Obsolete	Last Time Buy
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status):

NSBC124EPDXV6T1G (onsemi) - Preferred for new designs requiring direct 1 NPN, 1 PNP configuration. Active product status ensures long-term availability and supply chain stability. Electrical parameters align within acceptable tolerances. SOT-563 package requires PCB layout verification for pin compatibility.
RN4983FE,LF(CT (Toshiba Semiconductor and Storage) - Active product with 1 NPN, 1 PNP configuration. Offers superior transition frequency (250 MHz) and lower collector cutoff current (100 nA). Power dissipation rating of 100 mW is lower than PEMD2,115; verify thermal requirements in target application.
EMH1T2R (Rohm Semiconductor) - Active product with 2 NPN configuration. Suitable for applications where dual NPN transistors are functionally equivalent to the original NPN/PNP pair. Transition frequency of 250 MHz provides enhanced switching performance. EMT6 package requires footprint verification.

Secondary Substitutes (Obsolete or Last Time Buy Status):

NSBC124EPDXV6T5G (onsemi, Obsolete) - Electrical equivalent to NSBC124EPDXV6T1G but with obsolete status; use only for legacy system maintenance.
NSVBC124EDXV6T1G (onsemi, Last Time Buy) - 2 NPN configuration with Last Time Buy status; suitable for existing production runs with defined end-of-life planning.
NSBC124EDXV6T5G (onsemi, Obsolete) - 2 NPN configuration; use only when no active alternatives are available.

Compliance Verification:

All substitute parts maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols. REACH status is unaffected for all listed alternatives.

Frequently Asked Questions (FAQ)

Q: Can NSBC124EPDXV6T1G directly replace PEMD2,115 without PCB modifications?

A: NSBC124EPDXV6T1G maintains electrical equivalence but uses SOT-563 package versus PEMD2,115's SOT-666 package. Pin configuration and footprint differ; PCB layout verification is required. Consult package datasheets for pinout mapping.

Q: What is the functional difference between 1 NPN, 1 PNP and 2 NPN configurations?

A: PEMD2,115 integrates one NPN and one PNP transistor, enabling complementary switching applications. EMH1T2R, NSBC124EDXV6T5G, and NSVBC124EDXV6T1G provide dual NPN transistors. Substitution with 2 NPN parts requires circuit redesign if PNP functionality is essential.

Q: Why does RN4983FE,LF(CT have lower maximum power dissipation (100 mW vs. 300 mW)?

A: RN4983FE,LF(CT is packaged in ES6, a smaller form factor than SOT-666. Lower power rating reflects thermal limitations of the package. Verify that application power requirements do not exceed 100 mW continuous dissipation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status and MSL Level 1 (Unlimited) rating, meeting standard environmental and moisture sensitivity requirements.

Q: Which substitute offers the best long-term availability?

A: NSBC124EPDXV6T1G (onsemi) and RN4983FE,LF(CT (Toshiba) both carry Active product status, indicating current manufacturing and distribution. These parts are recommended for new designs requiring extended product lifecycle support.

Q: Can PEMD2,115 be used in new designs?

A: No. PEMD2,115 carries "Not For New Designs" status. Select an active substitute part for all new circuit development. Use PEMD2,115 only for legacy system maintenance or repair of existing products.

Q: What is the significance of transition frequency in these pre-biased transistors?

A: Transition frequency (fT) indicates maximum switching speed capability. RN4983FE,LF(CT and EMH1T2R specify 250 MHz, enabling faster switching applications. PEMD2,115 does not specify transition frequency; verify switching speed requirements against substitute specifications.

Q: Are package variants (SOT-563, SOT-666, EMT6, ES6) interchangeable?

A: No. Each package has distinct physical dimensions and pinout configurations. Mechanical compatibility requires matching package type or complete PCB redesign. Consult manufacturer datasheets for pin assignment and footprint specifications before substitution.

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