PEMD17,115 Equivalent & Substitute Parts

Part Overview

The PEMD17,115 is a pre-biased dual bipolar transistor (BJT) manufactured by Nexperia USA Inc., combining one NPN and one PNP transistor in a single SOT-666 surface mount package. This component integrates internal biasing resistors, eliminating the need for external base resistor networks in switching and logic applications.

The PEMD17,115 is classified as obsolete. Equivalent substitute parts are available from active manufacturers, providing continued design support and supply chain alternatives for applications requiring pre-biased dual BJT functionality with identical or compatible electrical specifications.

Substiute Parts

PEMD17,115

Nexperia USA Inc.In Stock: 1037PEMD17,115 Datasheet

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EMD5T2R

Rohm SemiconductorIn Stock: 8499EMD5T2R Datasheet

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RN4984FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1025RN4984FE,LF(CT Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMD17,115 is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor configuration: 1 NPN and 1 PNP pre-biased pair
• Maximum collector current: 100 mA minimum
• Collector-emitter breakdown voltage: 50 V minimum
• Base resistor value: 47 kOhms (primary specification)
• Emitter-base resistor value: 22 kOhms (primary specification)
• Maximum power dissipation: 300 mW minimum

Mechanical Compatibility Requirements:

• Surface mount package: SOT-666 or equivalent footprint (SOT-563 compatible)
• Supplier device package designation

Regulatory & Environmental Requirements:

• RoHS3 compliance
• MSL rating: 1 (Unlimited)

Substitute parts must satisfy all electrical parameters within the specified ranges. Variations in internal resistor values, transition frequency, or saturation voltage characteristics indicate different internal biasing networks and may affect circuit performance in specific applications.

Parameter Comparison

Engineering Selection Recommendations

EMD5T2R (Rohm Semiconductor): The EMD5T2R is an active substitute with identical maximum collector current (100 mA) and collector-emitter breakdown voltage (50 V). The base resistor value matches the PEMD17,115 specification (47 kOhms). However, the emitter-base resistor options (47 kOhms or 10 kOhms) differ from the PEMD17,115 specification (22 kOhms), resulting in different biasing characteristics. Maximum power dissipation is reduced to 150 mW. The EMD5T2R is RoHS3 compliant with MSL rating 1 and is currently in active production.

RN4984FE,LF(CT (Toshiba Semiconductor and Storage): The RN4984FE,LF(CT is an active substitute with identical maximum collector current (100 mA) and collector-emitter breakdown voltage (50 V). The base resistor value matches the PEMD17,115 specification (47 kOhms). The emitter-base resistor value (47 kOhms) differs from the PEMD17,115 specification (22 kOhms), resulting in different biasing characteristics. Maximum power dissipation is reduced to 100 mW. The RN4984FE,LF(CT is RoHS3 compliant with MSL rating 1 and is currently in active production.

Both substitute parts maintain compliance with RoHS3 and MSL requirements. Selection between substitutes depends on application-specific requirements for power dissipation, biasing network characteristics, and internal resistor configurations.

Frequently Asked Questions (FAQ)

Q: Can the EMD5T2R directly replace the PEMD17,115 in all applications?

A: The EMD5T2R shares the same maximum collector current (100 mA) and collector-emitter breakdown voltage (50 V) as the PEMD17,115. However, the emitter-base resistor value differs (47 kOhms or 10 kOhms versus 22 kOhms), which affects the internal biasing network and switching characteristics. Applications sensitive to biasing response time or switching speed may require circuit evaluation.

Q: What is the significance of the different emitter-base resistor values?

A: The emitter-base resistor (R2) is part of the internal biasing network and directly affects the transistor's switching speed, turn-on delay, and biasing current distribution. The PEMD17,115 specifies 22 kOhms, while substitutes specify 47 kOhms or 10 kOhms. This parameter difference may impact circuit performance in timing-critical applications.

Q: Are the package designations SOT-666, EMT6, and ES6 physically compatible?

A: All three package designations are surface mount packages compatible with SOT-563 and SOT-666 footprints. Physical compatibility exists for PCB placement. However, pin configuration and internal layout may differ; verification against specific package datasheets is required for final assembly confirmation.

Q: Why is the maximum power dissipation lower in the substitute parts?

A: The EMD5T2R specifies 150 mW and the RN4984FE,LF(CT specifies 100 mW, compared to the PEMD17,115 specification of 300 mW. This reflects different thermal design and internal resistor configurations. Applications operating near the 300 mW limit of the original part may require thermal or circuit redesign when using substitutes.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the EMD5T2R and RN4984FE,LF(CT are RoHS3 compliant with MSL rating 1 (Unlimited), matching the environmental and regulatory status of the PEMD17,115.

Q: What is the difference between the Rohm EMD5T2R and Toshiba RN4984FE,LF(CT?

A: Both are active pre-biased dual BJT substitutes with identical maximum ratings (100 mA, 50 V). The primary differences are: (1) emitter-base resistor value (47 kOhms or 10 kOhms for Rohm versus 47 kOhms for Toshiba), (2) maximum power dissipation (150 mW for Rohm versus 100 mW for Toshiba), and (3) package designation (EMT6 versus ES6). Selection depends on application power requirements and biasing network specifications.