PEMD16,115 Equivalent & Substitute Parts

Part Overview

The PEMD16,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal biasing resistors, eliminating the need for external base resistor networks in switching and logic applications. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PEMD16,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives for ongoing production requirements, maintenance applications, and design continuity.

Substiute Parts

PEMD16,115

Nexperia USA Inc.In Stock: 4423PEMD16,115 Datasheet

Current PartRFQ

RN1908FE(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 1107RN1908FE(TE85L,F) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMD16,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Maximum collector current (Ic): 100mA
• Maximum collector-emitter breakdown voltage (Vce): 50V
• Internal base resistor (R1): 22kOhms
• Internal emitter-base resistor (R2): 47kOhms
• Minimum DC current gain (hFE): 80 or greater
• Surface mount packaging compatibility
• RoHS and MSL compliance

The RN1908FE(TE85L,F) manufactured by Toshiba Semiconductor and Storage meets all mandatory electrical parameters and compliance requirements. While the RN1908FE differs in transistor configuration (2 NPN versus 1 NPN, 1 PNP), it maintains electrical equivalence for applications requiring the specified current, voltage, and gain characteristics with identical internal resistor values.

Parameter Comparison

Engineering Selection Recommendations

The RN1908FE(TE85L,F) is a direct functional substitute for the PEMD16,115 based on electrical parameter equivalence and compliance certifications. Both components are RoHS compliant and carry MSL Level 1 ratings, ensuring compatibility with standard surface mount assembly processes.

The PEMD16,115 carries "Not For New Designs" status, indicating end-of-life designation by Nexperia. The RN1908FE(TE85L,F) maintains "Active" product status with Toshiba Semiconductor and Storage, providing long-term availability and supply chain continuity.

The RN1908FE(TE85L,F) exhibits a lower maximum power rating (100mW versus 300mW). Circuit designs operating within the 100mW thermal envelope will experience no functional impact. Applications requiring sustained power dissipation above 100mW require thermal analysis to confirm the substitute part operates within safe junction temperature limits.

Both components are supplied in surface mount packages compatible with standard pick-and-place assembly equipment. Pinout and footprint verification against specific package designations (SOT-563 or SOT-666) is required prior to PCB layout implementation.

Frequently Asked Questions (FAQ)

Q: Can the RN1908FE(TE85L,F) directly replace the PEMD16,115 in existing designs?

A: The RN1908FE(TE85L,F) is electrically equivalent for applications operating within its 100mW power rating. Designs currently dissipating less than 100mW per transistor element will function identically. Designs approaching or exceeding 100mW require thermal analysis to confirm safe operation.

Q: What is the significance of the transistor type difference (1 NPN, 1 PNP versus 2 NPN)?

A: The PEMD16,115 integrates one NPN and one PNP transistor in a single package, while the RN1908FE(TE85L,F) integrates two NPN transistors. For applications requiring complementary transistor pairs, the RN1908FE(TE85L,F) is not suitable. For applications using only the NPN element, the RN1908FE(TE85L,F) provides equivalent performance.

Q: Are the internal resistor values identical between these parts?

A: Yes. Both the PEMD16,115 and RN1908FE(TE85L,F) incorporate 22kOhms base resistor (R1) and 47kOhms emitter-base resistor (R2). No external resistor network modifications are required for substitution.

Q: What packaging options are available for the PEMD16,115?

A: The PEMD16,115 is available in SOT-563 and SOT-666 surface mount packages. Verify the specific package designation required for your application before component selection.

Q: Are both parts RoHS compliant?

A: Yes. The PEMD16,115 is ROHS3 compliant, and the RN1908FE(TE85L,F) is RoHS compliant. Both components meet environmental and regulatory requirements for standard manufacturing processes.

Q: What is the moisture sensitivity level for these components?

A: Both the PEMD16,115 and RN1908FE(TE85L,F) carry MSL Level 1 (Unlimited) ratings, indicating no moisture-related storage or handling restrictions. Standard surface mount assembly processes are applicable without special precautions.

Q: How do the DC current gain specifications compare?

A: Both components specify a minimum DC current gain (hFE) of 80. The PEMD16,115 is characterized at 5mA collector current and 5V collector-emitter voltage, while the RN1908FE(TE85L,F) is characterized at 10mA and 5V. Both specifications ensure adequate gain for switching applications within the specified operating range.