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PEMD15,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts
Part Overview
The PEMD15,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal base resistors (4.7kΩ each) for simplified circuit design and reduced component count in switching and logic applications.
The PEMD15,115 carries a product status of "Not For New Designs," indicating it is obsolete or being phased out. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility for existing designs requiring replacement or redesign considerations.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | — |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 4.7 | kΩ |
| Resistor - Emitter Base (R2) | 4.7 | kΩ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | — |
| Current - Collector Cutoff (Max) | 1 | µA |
| Power - Max | 300 | mW |
| Mounting Type | Surface Mount | — |
| Package / Case | SOT-666 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the PEMD15,115 is determined by strict equivalence across the following critical parameters:
Mandatory Matching Criteria:
- Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
- Maximum collector current: 100mA
- Maximum collector-emitter breakdown voltage: 50V
- Internal base resistor values: 4.7kΩ (R1 and R2)
- Surface mount technology
- RoHS3 compliance
- MSL rating of 1 (Unlimited)
Package Compatibility: The PEMD15,115 is supplied in SOT-666 packaging. Substitute parts may be available in alternative surface mount packages (SOT-563, ES6) provided the electrical specifications remain within the defined parameters and the physical footprint is compatible with the target application.
Electrical Performance Considerations: Substitute parts must maintain the specified maximum ratings for collector current, breakdown voltage, and power dissipation. Variations in DC current gain (hFE), saturation voltage (Vce), and cutoff current are acceptable within the bounds of the substitute part's published specifications, as these parameters define the operating characteristics of each device.
Parameter Comparison
| Parameter | PEMD15,115 (Nexperia) | NSBC143EPDXV6T1G (onsemi) | RN4981FE,LF(CT (Toshiba) |
|---|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | 50V | 50V |
| Resistor - Base (R1) | 4.7kΩ | 4.7kΩ | 4.7kΩ |
| Resistor - Emitter Base (R2) | 4.7kΩ | 4.7kΩ | 4.7kΩ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | 15 @ 5mA, 10V | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | 250mV @ 1mA, 10mA | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA | 500nA | 500nA |
| Power - Max | 300mW | 500mW | 100mW |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SOT-666 | SOT-563 | ES6 |
| Product Status | Not For New Designs | Last Time Buy | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
NSBC143EPDXV6T1G (onsemi): This substitute maintains electrical equivalence across all critical parameters: 100mA collector current, 50V breakdown voltage, and 4.7kΩ internal resistors. The NSBC143EPDXV6T1G offers higher maximum power dissipation (500mW vs. 300mW), providing additional thermal margin. However, this part carries a "Last Time Buy" product status, indicating limited future availability. The SOT-563 package differs from the PEMD15,115 SOT-666 package; physical footprint compatibility must be verified for the target application. RoHS3 compliance and MSL-1 rating match the original specification.
RN4981FE,LF(CT (Toshiba): This substitute maintains electrical equivalence across all critical parameters: 100mA collector current, 50V breakdown voltage, and 4.7kΩ internal resistors. The RN4981FE,LF(CT carries an "Active" product status, ensuring long-term availability and supply continuity. The ES6 package differs from the PEMD15,115 SOT-666 package; physical footprint compatibility must be verified for the target application. The maximum power dissipation is lower (100mW vs. 300mW), which may limit thermal performance in high-power applications. RoHS3 compliance and MSL-1 rating match the original specification.
Product Status Consideration: The PEMD15,115 is marked "Not For New Designs." For new designs, the RN4981FE,LF(CT is the preferred selection due to its "Active" status. For existing designs requiring replacement components, both NSBC143EPDXV6T1G and RN4981FE,LF(CT are viable, subject to package compatibility verification.
Frequently Asked Questions (FAQ)
Q: Can the NSBC143EPDXV6T1G replace the PEMD15,115 in existing designs?
A: The NSBC143EPDXV6T1G is electrically equivalent to the PEMD15,115 across all critical parameters (collector current, breakdown voltage, internal resistor values, and gain characteristics). However, the NSBC143EPDXV6T1G is supplied in SOT-563 packaging, while the PEMD15,115 uses SOT-666 packaging. Physical footprint compatibility must be verified before substitution. If the PCB layout accommodates SOT-563, the NSBC143EPDXV6T1G is a direct electrical substitute.
Q: What is the difference between SOT-666 and SOT-563 packages?
A: SOT-666 and SOT-563 are both surface mount packages for dual transistor configurations but differ in physical dimensions and pin layout. The specific footprint requirements depend on the PCB design. Consult the package datasheets to determine compatibility with your application.
Q: Is the RN4981FE,LF(CT suitable for high-power applications?
A: The RN4981FE,LF(CT has a maximum power dissipation rating of 100mW, compared to the PEMD15,115 rating of 300mW. For applications requiring sustained power dissipation above 100mW, the RN4981FE,LF(CT may not be suitable without additional thermal management. The NSBC143EPDXV6T1G, with a 500mW rating, provides greater thermal headroom.
Q: Why does the PEMD15,115 have a "Not For New Designs" status?
A: The "Not For New Designs" status indicates that the PEMD15,115 is obsolete or being phased out by the manufacturer. New designs should utilize parts with "Active" status, such as the RN4981FE,LF(CT, to ensure long-term component availability and supply chain stability.
Q: Are all three parts RoHS3 compliant?
A: Yes. The PEMD15,115, NSBC143EPDXV6T1G, and RN4981FE,LF(CT are all RoHS3 compliant and carry MSL-1 (Unlimited) moisture sensitivity ratings, meeting environmental and reliability standards for industrial and commercial applications.
Q: What is the significance of the 4.7kΩ internal resistors?
A: The 4.7kΩ internal base resistors (R1 and R2) are integrated into the pre-biased transistor package. These resistors establish the biasing network for both the NPN and PNP transistors, simplifying circuit design by eliminating the need for external biasing resistors. All three substitute parts maintain this 4.7kΩ specification, ensuring functional equivalence.
Q: Can the RN4981FE,LF(CT be used in new designs?
A: Yes. The RN4981FE,LF(CT carries an "Active" product status, making it suitable for new designs. It maintains electrical equivalence with the PEMD15,115 across all critical parameters and offers long-term availability.
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