PEMD13,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD13,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal biasing resistors for simplified circuit design in switching and logic applications. The part is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives from active product lines.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA	—
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Package / Case	SOT-666	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD13,115 is determined by the following critical parameters:

Mandatory Matching Criteria:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Maximum collector current: 100 mA
Maximum collector-emitter breakdown voltage: 50 V
Base resistor (R1): 4.7 kOhms
Emitter-base resistor (R2): 47 kOhms
Surface mount packaging capability
RoHS3 compliance

Acceptable Variation Parameters:

DC current gain (hFE) may vary within application tolerance
Vce saturation voltage may differ within switching performance requirements
Power dissipation rating may exceed 300 mW
Transition frequency specifications may differ
Collector cutoff current may vary

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (Dual NPN/PNP Configuration):

NSBC143ZPDXV6T1G (onsemi)
NSBC143TPDXV6T1G (onsemi)

Category B - Alternative Configuration (Dual NPN Configuration):

EMH75T2R (Rohm Semiconductor)

Category C - Different Package Offering (Dual NPN/PNP, SOT-563):

DCX143TH-7 (Diodes Incorporated)

Parameter Comparison

Parameter	PEMD13,115	NSBC143ZPDXV6T1G	NSBC143TPDXV6T1G	DCX143TH-7	EMH75T2R
Manufacturer	Nexperia USA Inc.	onsemi	onsemi	Diodes Incorporated	Rohm Semiconductor
Transistor Type	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN
Ic (Max)	100 mA	100 mA	100 mA	100 mA	100 mA
Vce Breakdown (Max)	50 V	50 V	50 V	50 V	50 V
R1 (Base)	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms
R2 (Emitter-Base)	47 kOhms	47 kOhms	—	—	47 kOhms
hFE (Min) @ Ic, Vce	100 @ 10mA, 5V	80 @ 5mA, 10V	160 @ 5mA, 10V	100 @ 1mA, 5V	80 @ 5mA, 10V
Vce Saturation (Max)	100mV @ 250µA, 5mA	250mV @ 1mA, 10mA	250mV @ 300µA, 10mA	300mV @ 250µA, 2.5mA	150mV @ 500µA, 5mA
Icbo (Max)	1 µA	500 nA	500 nA	500 nA	500 nA
Power (Max)	300 mW	500 mW	500 mW	150 mW	150 mW
Frequency - Transition	—	—	—	250 MHz	250 MHz
Package (Supplier)	SOT-666	SOT-563	SOT-563	SOT-563	EMT6
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

NSBC143ZPDXV6T1G and NSBC143TPDXV6T1G (onsemi) are the preferred substitutes for the PEMD13,115. Both parts maintain the dual NPN/PNP configuration with identical maximum ratings (100 mA, 50 V) and matching base resistor values (4.7 kOhms). Both are active products with ROHS3 compliance and unlimited moisture sensitivity rating. The primary difference is the emitter-base resistor specification; NSBC143ZPDXV6T1G includes the 47 kOhms R2 resistor matching the original design, while NSBC143TPDXV6T1G omits this specification. NSBC143ZPDXV6T1G offers higher power dissipation (500 mW vs. 300 mW), providing additional thermal margin. Both are supplied in SOT-563 packaging, which differs from the original SOT-666 but maintains surface mount compatibility.

Secondary Substitute (Alternative Configuration):

DCX143TH-7 (Diodes Incorporated) maintains the dual NPN/PNP configuration and identical electrical ratings but is supplied in SOT-563 packaging. This part has lower maximum power dissipation (150 mW) and higher Vce saturation voltage (300 mV), making it suitable only for applications with reduced power requirements and less stringent saturation performance.

Alternative Configuration (Not Recommended for Direct Replacement):

EMH75T2R (Rohm Semiconductor) features a dual NPN configuration rather than the NPN/PNP combination of the original part. This configuration change makes it unsuitable for applications requiring complementary transistor pairs. Use only if circuit design can accommodate dual NPN operation.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1), ensuring compatibility with standard manufacturing and storage requirements. All parts carry EAR99 export classification and are REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Can NSBC143ZPDXV6T1G directly replace PEMD13,115 in existing designs?

A: NSBC143ZPDXV6T1G is functionally equivalent with matching transistor configuration, current ratings, voltage ratings, and base resistor values. The primary difference is packaging (SOT-563 vs. SOT-666). PCB layout modification is required to accommodate the different package footprint. Electrical performance is compatible.

Q: What is the difference between NSBC143ZPDXV6T1G and NSBC143TPDXV6T1G?

A: Both parts are onsemi pre-biased dual transistors with identical maximum ratings and base resistor values. NSBC143ZPDXV6T1G specifies the emitter-base resistor (R2) at 47 kOhms, matching the original PEMD13,115 design. NSBC143TPDXV6T1G does not specify R2 in the provided data. NSBC143ZPDXV6T1G is the preferred choice for direct functional equivalence.

Q: Why does EMH75T2R have a different transistor configuration?

A: EMH75T2R is a dual NPN configuration (2 NPN) rather than the complementary NPN/PNP pair of PEMD13,115. This configuration difference makes it unsuitable for applications requiring both NPN and PNP transistor functions within a single package. Use only if circuit design has been modified to operate with dual NPN transistors.

Q: Is DCX143TH-7 suitable for high-power applications?

A: DCX143TH-7 has a maximum power dissipation rating of 150 mW, which is half that of the original PEMD13,115 (300 mW). Applications requiring sustained power dissipation above 150 mW should use NSBC143ZPDXV6T1G or NSBC143TPDXV6T1G, both rated at 500 mW.

Q: Are all substitute parts available in the same packaging?

A: No. PEMD13,115 is supplied in SOT-666 packaging. NSBC143ZPDXV6T1G, NSBC143TPDXV6T1G, and DCX143TH-7 are supplied in SOT-563 packaging. EMH75T2R is supplied in EMT6 packaging. PCB layout modifications are required for any package change.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All listed substitute parts (NSBC143ZPDXV6T1G, NSBC143TPDXV6T1G, DCX143TH-7, and EMH75T2R) are ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1), matching the original PEMD13,115 specifications.

Q: What is the inventory status of substitute parts?

A: NSBC143TPDXV6T1G has the highest inventory availability (97,400 pcs). NSBC143ZPDXV6T1G has 18,240 pcs available. EMH75T2R has 8,299 pcs available. DCX143TH-7 has 2,500 pcs available. Inventory levels should be verified at time of procurement.

Q: Can I use these substitutes in new designs?

A: Yes. All substitute parts listed are active products suitable for new designs. The original PEMD13,115 is marked "Not For New Designs," making these active alternatives the appropriate choice for new circuit development.

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