PEMD12,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD12,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP configuration) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal base resistors (47kΩ each) for simplified circuit design in switching and logic applications. The device operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 300mW power dissipation.

The PEMD12,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives from active product lines to ensure design continuity and long-term supply chain reliability.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Maximum Collector-Emitter Breakdown Voltage (Vceo)	50	V
Base Resistor (R1)	47	kΩ
Emitter-Base Resistor (R2)	47	kΩ
DC Current Gain (hFE) @ Ic, Vce	80 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150 @ 500µA, 10mA	mV
Maximum Power Dissipation	300	mW
Mounting Type	Surface Mount	—
Package	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMD12,115 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor value: 47kΩ
Emitter-base resistor value: 47kΩ
DC current gain minimum: 80 @ specified test conditions
Surface mount technology with compatible pinout

Secondary Compatibility Factors:

Package form factor (SOT-563 or SOT-666 acceptable with pinout verification)
RoHS3 compliance and MSL rating
Vce saturation characteristics within acceptable operating range

Parts are grouped into two categories:

Category A - Direct Functional Equivalents (1 NPN, 1 PNP Configuration): These parts maintain identical transistor configuration and internal resistor values, ensuring pin-for-pin compatibility with the PEMD12,115 in most applications.

Category B - Configuration Variants (2 NPN Configuration): These parts feature dual NPN transistors instead of mixed NPN/PNP configuration. Selection requires circuit topology verification to confirm functional compatibility.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vceo (Max) V	R1 (kΩ)	R2 (kΩ)	hFE (Min)	Vce Sat (Max) mV	Power (Max) mW	Package	Status
PEMD12,115	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	47	47	80 @ 5mA, 5V	150 @ 500µA, 10mA	300	SOT-666	Not For New Designs
DCX144EH-7	Diodes Incorporated	1 NPN, 1 PNP	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	150	SOT-563	Active
NSBC144EPDXV6T1G	onsemi	1 NPN, 1 PNP	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Active
RN4984FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active
RN4904FE,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active
EMD4DXV6T1G	onsemi	1 NPN, 1 PNP	100	50	47, 10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Active
EMH2T2R	Rohm Semiconductor	2 NPN	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	150	EMT6	Active
NSBC144EDXV6T1G	onsemi	2 NPN	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	SOT-563	Active
RN1904FE,LF(CT	Toshiba Semiconductor and Storage	2 NPN	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100	ES6	Active

Engineering Selection Recommendations

Primary Substitutes (1 NPN, 1 PNP Configuration - Direct Replacement):

The following parts maintain identical transistor configuration and internal resistor topology, providing direct functional equivalence to the PEMD12,115:

NSBC144EPDXV6T1G (onsemi): Active product status with 500mW power rating. Meets all electrical parameters with SOT-563 packaging. Recommended for new designs requiring the 1 NPN, 1 PNP configuration.
DCX144EH-7 (Diodes Incorporated): Active product with established supply chain. SOT-563 package requires pinout verification. Lower power rating (150mW) limits applications to lower dissipation circuits.
RN4984FE,LF(CT (Toshiba Semiconductor and Storage): Active product with 100mW power rating and 250MHz transition frequency. ES6 package form requires mechanical compatibility assessment.
RN4904FE,LF(CT (Toshiba Semiconductor and Storage): Active product with dual frequency specification (250MHz, 200MHz). Functionally equivalent to RN4984FE,LF(CT with identical electrical characteristics.

Secondary Substitutes (2 NPN Configuration - Application-Dependent):

The following parts feature dual NPN transistor configuration instead of mixed NPN/PNP. Selection requires verification that circuit topology does not depend on PNP transistor availability:

NSBC144EDXV6T1G (onsemi): Active product with 500mW power rating and SOT-563 packaging. Suitable for applications requiring dual NPN switching stages.
EMH2T2R (Rohm Semiconductor): Active product with 250MHz transition frequency and EMT6 package. 150mW power rating appropriate for low-power switching applications.
RN1904FE,LF(CT (Toshiba Semiconductor and Storage): Active product with 100mW power rating and 250MHz transition frequency. ES6 package form.

Compliance and Supply Chain Considerations:

All recommended substitutes maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the PEMD12,115 environmental specifications. All parts carry EAR99 export classification and REACH Unaffected status, ensuring regulatory equivalence.

Frequently Asked Questions (FAQ)

Q: Can the PEMD12,115 be replaced with a 2 NPN configuration part such as NSBC144EDXV6T1G?

A: Substitution with 2 NPN configuration parts is possible only if the circuit design does not require a PNP transistor. The internal resistor values (47kΩ base, 47kΩ emitter-base) and electrical ratings remain equivalent. Circuit topology verification is mandatory before substitution.

Q: What is the significance of the different package types (SOT-666, SOT-563, ES6, EMT6)?

A: Package type affects physical dimensions, PCB footprint, and thermal characteristics. SOT-666 and SOT-563 are industry-standard packages with similar pinout compatibility. ES6 and EMT6 packages require verification of pin assignment and mechanical fit on the target PCB. Consult device datasheets for pinout confirmation before substitution.

Q: Why does the PEMD12,115 have a "Not For New Designs" status?

A: This status indicates that Nexperia has discontinued active development and marketing of this part number. Existing inventory remains available, but the manufacturer recommends using active alternatives for new circuit designs to ensure long-term supply chain continuity and access to technical support.

Q: Are there differences in DC current gain (hFE) specifications between the PEMD12,115 and substitute parts?

A: Yes. The PEMD12,115 specifies hFE minimum of 80 @ 5mA, 5V. Substitute parts vary in test conditions: some specify 80 @ 5mA, 10V or 80 @ 10mA, 5V. These variations reflect different measurement methodologies but do not prevent functional substitution in most applications. Verify hFE performance against specific circuit requirements.

Q: What is the impact of different power dissipation ratings (100mW, 150mW, 300mW, 500mW)?

A: Power dissipation rating determines maximum thermal load the device can sustain. The PEMD12,115 is rated at 300mW. Substitutes with lower ratings (100mW, 150mW) restrict applications to lower current or lower frequency switching. Substitutes with higher ratings (500mW) provide additional thermal margin. Select based on actual circuit power dissipation requirements.

Q: Is the Vce saturation specification critical for substitution?

A: Vce saturation affects switching speed and power loss in saturated switching applications. The PEMD12,115 specifies 150mV maximum @ 500µA, 10mA. Substitute parts range from 250mV to 300mV at different test conditions. Higher saturation voltage increases power dissipation in saturated switching circuits. Verify compatibility with circuit design margins.

Q: Can parts with different base resistor values (47kΩ vs. 10kΩ vs. 4.7kΩ) be substituted?

A: Base resistor value directly affects input impedance and switching threshold. The PEMD12,115 specifies 47kΩ base resistor. Parts with different values (such as EMD4DXV6T1G with 47kΩ or 10kΩ options) may alter circuit behavior. Substitution with different resistor values requires circuit analysis to confirm functional compatibility.

Q: What packaging considerations apply when substituting SOT-666 with SOT-563?

A: SOT-666 and SOT-563 are both six-pin surface mount packages but have different physical dimensions and pinout assignments. Mechanical compatibility requires PCB footprint verification. Electrical pinout must be confirmed against device datasheets before substitution. Consult manufacturer documentation for pin assignment details.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message