PEMD10,115 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PEMD10,115 is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates internal base resistors (R1: 2.2kΩ, R2: 47kΩ) for simplified circuit design and rapid switching applications. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PEMD10,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives from active product lines to ensure design continuity and long-term supply chain reliability.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	2.2	kΩ
Resistor - Emitter Base (R2)	47	kΩ
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	100 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PEMD10,115 is determined by the following critical parameters:

Primary Matching Criteria:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 2.2kΩ
Internal emitter-base resistor (R2): 47kΩ
Surface mount packaging (SOT-563 or SOT-666 compatible)
RoHS3 compliance and MSL 1 rating

Secondary Compatibility Parameters:

DC current gain (hFE) minimum specification
Vce saturation voltage
Collector cutoff current
Power dissipation rating
Transition frequency (where specified)

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (Identical R1/R2 Values): Parts with matching 2.2kΩ and 47kΩ internal resistor values. These include DCX114YH-7, DCX123JH-7, NSBC123JPDXV6T1G, NSBC123JPDXV6T5G, RN1905FE,LF(CT), and RN4905FE,LF(CT). These parts maintain identical bias network characteristics and require no circuit redesign.

Category B - Functional Alternatives (Different R1/R2 Values): Parts with alternative internal resistor configurations (DCX114EH-7, DCX114TH-7, DCX124EH-7, DCX143EH-7). These require circuit evaluation to confirm compatibility with the intended application bias conditions.

Parameter Comparison

Parameter	PEMD10,115	DCX114YH-7	DCX123JH-7	NSBC123JPDXV6T1G	RN4905FE,LF(CT)	DCX114EH-7	DCX114TH-7
Manufacturer	Nexperia USA Inc.	Diodes Incorporated	Diodes Incorporated	onsemi	Toshiba Semiconductor	Diodes Incorporated	Diodes Incorporated
Transistor Type	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP
Ic (Max)	100	100	100	100	100	100	100
Vce Breakdown (Max)	50	50	50	50	50	50	50
R1 (kΩ)	2.2	10	2.2	2.2	2.2	10	10
R2 (kΩ)	47	47	47	47	47	10	—
hFE Min @ Ic, Vce	100 @ 10mA, 5V	68 @ 10mA, 5V	80 @ 10mA, 5V	80 @ 5mA, 10V	80 @ 10mA, 5V	30 @ 5mA, 5V	100 @ 1mA, 5V
Vce Sat (Max) @ Ib, Ic	100 @ 250µA, 5mA	300 @ 250µA, 5mA	300 @ 250µA, 5mA	250 @ 300µA, 10mA	300 @ 250µA, 5mA	300 @ 500µA, 10mA	300 @ 100µA, 1mA
Icbo (Max)	1 µA	500 nA	500 nA	500 nA	100 nA	500 nA	500 nA
Power (Max)	300	150	150	500	100	150	150
Frequency - Transition	—	250	250	—	200	250	250
Package	SOT-666	SOT-563	SOT-563	SOT-563	ES6	SOT-563	SOT-563
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Product Status, Matching R1/R2 Configuration):

The following parts are recommended as direct replacements for the PEMD10,115 in new designs and ongoing production:

DCX123JH-7 (Diodes Incorporated) - Active product status with identical 2.2kΩ and 47kΩ internal resistor configuration. Electrical characteristics closely match the PEMD10,115 with hFE minimum of 80 @ 10mA, 5V and 250MHz transition frequency. Available in SOT-563 packaging with 39,080 units in stock. ROHS3 compliant and MSL 1 rated.

NSBC123JPDXV6T1G (onsemi) - Active product status with matching 2.2kΩ and 47kΩ internal resistor values. Provides superior power dissipation rating (500mW versus 300mW) and improved Vce saturation performance (250mV @ 300µA, 10mA). Available in SOT-563 packaging with 16,300 units in stock. ROHS3 compliant and MSL 1 rated.

RN4905FE,LF(CT) (Toshiba Semiconductor and Storage) - Active product status with identical 2.2kΩ and 47kΩ internal resistor configuration. Provides 200MHz transition frequency and superior collector cutoff current specification (100nA ICBO). Available in ES6 packaging with 4,761 units in stock. ROHS3 compliant and MSL 1 rated.

Alternative Substitutes (Active Product Status, Different R1/R2 Configuration):

DCX114YH-7 (Diodes Incorporated) - Active product status with 10kΩ base resistor and 47kΩ emitter-base resistor. Suitable for applications where higher base impedance is acceptable. hFE minimum of 68 @ 10mA, 5V with 250MHz transition frequency. Available in SOT-563 packaging with 3,400 units in stock.

DCX114TH-7 (Diodes Incorporated) - Active product status with 10kΩ base resistor. Provides hFE minimum of 100 @ 1mA, 5V matching the PEMD10,115 gain specification. Suitable for low-current switching applications. Available in SOT-563 packaging with 38,980 units in stock.

Obsolete Alternative (Not Recommended for New Designs):

NSBC123JPDXV6T5G (onsemi) - Obsolete product status. Although electrically equivalent to NSBC123JPDXV6T1G with matching 2.2kΩ and 47kΩ internal resistors, this variant is no longer in active production. Use NSBC123JPDXV6T1G instead.

Packaging Considerations:

The PEMD10,115 is supplied in SOT-666 packaging. Most substitute parts are available in SOT-563 packaging, which is mechanically and electrically compatible for surface mount applications. RN4905FE,LF(CT) is supplied in ES6 packaging, also compatible with standard surface mount assembly processes. Verify PCB footprint compatibility before design implementation.

Frequently Asked Questions (FAQ)

Q: Can DCX114EH-7 be used as a direct replacement for PEMD10,115?

A: DCX114EH-7 has different internal resistor values (10kΩ base resistor, 10kΩ emitter-base resistor) compared to the PEMD10,115 (2.2kΩ and 47kΩ). While electrically functional, the bias network characteristics differ significantly. This part is suitable only if circuit analysis confirms compatibility with the alternative resistor configuration. The lower hFE minimum (30 @ 5mA, 5V) also differs from the PEMD10,115 specification (100 @ 10mA, 5V).

Q: What is the primary difference between DCX123JH-7 and DCX124EH-7?

A: Both are Diodes Incorporated pre-biased dual transistors with 50V rating and 100mA maximum collector current. DCX123JH-7 has 2.2kΩ and 47kΩ internal resistors matching the PEMD10,115, while DCX124EH-7 has 22kΩ and 22kΩ internal resistors. DCX123JH-7 is the appropriate substitute for PEMD10,115 applications.

Q: Why does NSBC123JPDXV6T1G have a higher power rating (500mW) than the PEMD10,115 (300mW)?

A: The higher power rating reflects the onsemi device's thermal design and package characteristics. This does not affect substitution eligibility. The higher rating provides additional design margin and is not a disadvantage for replacement applications.

Q: Are SOT-563 and SOT-666 packages interchangeable?

A: SOT-563 and SOT-666 are both six-pin surface mount packages with identical pin configurations and electrical connectivity. They are mechanically and electrically compatible. PCB footprint design must accommodate the specific package dimensions, but both packages support standard surface mount assembly processes.

Q: What does "Not For New Designs" status mean for the PEMD10,115?

A: This status indicates that Nexperia has discontinued active development and marketing of the PEMD10,115. The part remains available from existing inventory but will not receive design updates or long-term supply guarantees. New designs should transition to active product alternatives such as DCX123JH-7 or NSBC123JPDXV6T1G to ensure supply chain continuity.

Q: Can RN1905FE,LF(CT) substitute for PEMD10,115?

A: RN1905FE,LF(CT) is a 2 NPN pre-biased dual transistor, not a 1 NPN, 1 PNP configuration. This part is not suitable for applications requiring both NPN and PNP transistor functions within a single package. Use only for applications specifically designed for dual NPN configuration.

Q: How do I verify compatibility before implementing a substitute part?

A: Compare the following parameters between the PEMD10,115 and the proposed substitute: (1) transistor configuration (1 NPN, 1 PNP), (2) internal resistor values (R1 and R2), (3) maximum collector current (100mA), (4) collector-emitter breakdown voltage (50V), (5) DC current gain specification, and (6) Vce saturation voltage. Confirm that the substitute meets or exceeds the PEMD10,115 specifications for your specific application requirements.

Q: What is the significance of the transition frequency specification?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful gain. The PEMD10,115 does not specify this parameter. Substitute parts with specified transition frequencies (200MHz to 250MHz) provide additional performance margin for high-frequency switching applications. This is not a limiting factor for standard switching applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the PEMD10,115 environmental specifications. This ensures compatibility with standard manufacturing and storage requirements.

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