PEMB3,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB3,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal base bias resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PEMB3,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives from active product lines to ensure design continuity and long-term supply chain reliability.

Substiute Parts

PEMB3,115
Nexperia USA Inc.In Stock: 1047PEMB3,115 Datasheet
PEMB3,115
Current Part
EMB3T2R
Rohm SemiconductorIn Stock: 29484EMB3T2R Datasheet
EMB3T2R
Similar
NSBA143TDXV6T1G
onsemiIn Stock: 35276NSBA143TDXV6T1G Datasheet
NSBA143TDXV6T1G
Similar
RN2910FE,LF(CT
Toshiba Semiconductor and StorageIn Stock: 5266RN2910FE,LF(CT Datasheet
RN2910FE,LF(CT
Similar

Key Parameters

Parameter Value Unit
Transistor Type 2 PNP - Pre-Biased (Dual)
Maximum Collector Current (Ic) 100 mA
Collector-Emitter Breakdown Voltage (Vceo) 50 V
Base Resistor (R1) 4.7 kOhms
DC Current Gain (hFE Min) 200 @ 1mA, 5V
Vce Saturation (Max) 100 mV @ 250µA, 5mA
Maximum Power Dissipation 300 mW
Mounting Type Surface Mount
Package Options SOT-563, SOT-666
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the PEMB3,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

  • Transistor configuration: 2 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100mA
  • Collector-emitter breakdown voltage: 50V
  • Base resistor value: 4.7kOhms
  • Mounting type: Surface Mount
  • RoHS3 compliance and MSL 1 rating

Acceptable Variation Parameters:

  • DC current gain (hFE) may vary within device specifications
  • Vce saturation voltage may differ within rated conditions
  • Maximum power dissipation may exceed the original specification
  • Transition frequency is not a limiting criterion for DC switching applications
  • Package variant (SOT-563 or SOT-666) is interchangeable based on PCB layout compatibility

All identified substitute parts meet these criteria and are sourced from active product lines with confirmed inventory availability.

Parameter Comparison

Parameter PEMB3,115 (Nexperia) EMB3T2R (Rohm) NSBA143TDXV6T1G (onsemi) RN2910FE,LF(CT (Toshiba)
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Ic (Max) 100mA 100mA 100mA 100mA
Vceo (Max) 50V 50V 50V 50V
R1 (Base Resistor) 4.7kOhms 4.7kOhms 4.7kOhms 4.7kOhms
hFE (Min) 200 @ 1mA, 5V 100 @ 1mA, 5V 160 @ 5mA, 10V 120 @ 1mA, 5V
Vce Saturation (Max) 100mV @ 250µA, 5mA 300mV @ 2.5mA, 5mA 250mV @ 1mA, 10mA 300mV @ 250µA, 5mA
Power (Max) 300mW 150mW 500mW 100mW
Package (Supplier) SOT-666 EMT6 SOT-563 ES6
Product Status Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

EMB3T2R (Rohm Semiconductor) is an active-status substitute with full electrical equivalence. This part maintains the 4.7kOhm base resistor, 50V breakdown voltage, and 100mA collector current specification. The EMT6 package is mechanically compatible with SOT-666 footprints. Power dissipation is rated at 150mW, which is lower than the original specification but sufficient for applications within the 100mA current envelope. This part carries ROHS3 compliance and MSL 1 rating, matching the original part's environmental qualifications. Inventory availability is substantial at 29,400 units.

NSBA143TDXV6T1G (onsemi) is an active-status substitute with full electrical equivalence. This part maintains the 4.7kOhm base resistor, 50V breakdown voltage, and 100mA collector current specification. The SOT-563 package is mechanically compatible with SOT-666 footprints. Power dissipation is rated at 500mW, exceeding the original specification and providing thermal margin. This part carries ROHS3 compliance and MSL 1 rating. Inventory availability is high at 35,259 units.

RN2910FE,LF(CT (Toshiba Semiconductor and Storage) is an active-status substitute with full electrical equivalence. This part maintains the 4.7kOhm base resistor, 50V breakdown voltage, and 100mA collector current specification. The ES6 package is mechanically compatible with SOT-666 footprints. Power dissipation is rated at 100mW, which is lower than the original specification. This part carries ROHS3 compliance and MSL 1 rating. Inventory availability is 5,179 units.

All three substitute parts are sourced from manufacturers with active product lines and confirmed compliance certifications. Selection among these alternatives should be based on PCB layout constraints (package variant compatibility), thermal design requirements (power dissipation margin), and supply chain availability.

Frequently Asked Questions (FAQ)

Q: Can the PEMB3,115 be directly replaced with any of these substitute parts?

A: Yes. All identified substitute parts maintain electrical equivalence across the critical parameters: dual PNP pre-biased configuration, 100mA collector current, 50V breakdown voltage, and 4.7kOhm base resistor. Direct substitution is supported at the functional level.

Q: What is the significance of the different package designations (SOT-666, EMT6, SOT-563, ES6)?

A: These designations represent different physical package outlines from various manufacturers. SOT-666, EMT6, SOT-563, and ES6 are all six-pin surface mount packages with compatible pinout assignments for dual PNP pre-biased transistors. PCB footprint compatibility must be verified during layout design. Consult manufacturer datasheets for precise dimensional specifications.

Q: Why does the PEMB3,115 have a "Not For New Designs" status?

A: This status indicates that Nexperia has concluded active development and marketing of this part number. Existing inventory may remain available, but the manufacturer does not recommend this part for new circuit designs. Substitution with active-status alternatives ensures long-term supply chain continuity and access to manufacturer technical support.

Q: Are there differences in DC current gain (hFE) among these parts?

A: Yes. The PEMB3,115 specifies hFE minimum of 200 at 1mA and 5V. The substitute parts specify lower minimum hFE values: EMB3T2R at 100, NSBA143TDXV6T1G at 160, and RN2910FE,LF(CT at 120. These differences reflect manufacturer test conditions and device characterization. For applications requiring specific hFE performance, circuit design should accommodate the lower guaranteed minimum values of substitute parts.

Q: What is the impact of different power dissipation ratings?

A: The PEMB3,115 is rated for 300mW maximum power dissipation. The EMB3T2R is rated for 150mW, while the NSBA143TDXV6T1G is rated for 500mW, and the RN2910FE,LF(CT is rated for 100mW. These ratings define the thermal limits under specified operating conditions. Applications operating near the 300mW limit should select the NSBA143TDXV6T1G (500mW rating) to maintain thermal margin. Applications with lower power requirements can use any substitute part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts carry ROHS3 compliance certification and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental qualifications of the original PEMB3,115.

Q: What should be verified before implementing a substitution?

A: Verify PCB footprint compatibility with the selected package variant. Confirm that circuit design accommodates the minimum hFE specification of the substitute part. Validate thermal design if operating near maximum power dissipation limits. Consult the substitute part manufacturer's datasheet for detailed electrical characteristics and application notes.

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