PEMB24,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB24,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., designed for surface mount applications in SOT-666 packaging. This component integrates two PNP transistors with internal biasing resistors, rated for 50V collector-emitter breakdown voltage and 20mA maximum collector current with 300mW power dissipation.

The PEMB24,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development and support for this part number. This status necessitates identification of functionally equivalent alternatives for ongoing production requirements, maintenance applications, and new design implementations where pre-biased dual PNP transistor functionality is required.

Substiute Parts

PEMB24,115

Nexperia USA Inc.In Stock: 909PEMB24,115 Datasheet

Current PartRFQ

NSBA115EDXV6T1G

onsemiIn Stock: 32462NSBA115EDXV6T1G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMB24,115 is determined by strict equivalence across the following critical parameters:

Functional Equivalence Criteria:

• Transistor configuration: Dual PNP pre-biased topology
• Voltage rating: Collector-emitter breakdown voltage of 50V or greater
• Internal biasing resistors: Base resistor (R1) and emitter-base resistor (R2) both 100kOhms
• DC current gain: Minimum hFE of 80 at specified operating conditions
• Saturation characteristics: Vce saturation performance within acceptable operating margins

Mechanical Compatibility Criteria:

• Surface mount technology
• Package compatibility: SOT-563 or SOT-666 footprints
• Moisture sensitivity level: MSL 1 or equivalent

Regulatory Compliance Criteria:

• RoHS3 compliance
• REACH unaffected status
• ECCN classification: EAR99

The NSBA115EDXV6T1G manufactured by onsemi meets all functional and mechanical equivalence criteria while maintaining superior electrical performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: NSBA115EDXV6T1G (onsemi)

The NSBA115EDXV6T1G is the direct functional equivalent for the PEMB24,115. This substitute maintains identical voltage ratings, internal biasing resistor values, and minimum DC current gain specifications. The onsemi part demonstrates superior electrical performance with higher maximum collector current (100mA versus 20mA) and power dissipation (500mW versus 300mW), providing design margin for applications requiring the PEMB24,115 functionality.

Compliance and Support Status:

Both parts maintain RoHS3 compliance and REACH unaffected status. The NSBA115EDXV6T1G carries active product status from onsemi, ensuring continued manufacturing support, availability, and technical documentation. The PEMB24,115 "Not For New Designs" designation from Nexperia indicates that this part should not be selected for new circuit implementations; the NSBA115EDXV6T1G provides a compliant path forward for both legacy support and new applications.

Package Considerations:

The PEMB24,115 is supplied in SOT-666 packaging, while the NSBA115EDXV6T1G is supplied in SOT-563 packaging. Both packages are surface mount technologies with compatible pinout configurations for dual pre-biased PNP transistor applications. PCB layout modifications may be required to accommodate the different package footprints.

Inventory and Availability:

The NSBA115EDXV6T1G maintains significantly higher inventory levels (32,400 pieces) compared to the PEMB24,115 (808 pieces), supporting consistent supply chain reliability for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the NSBA115EDXV6T1G directly replace the PEMB24,115 without circuit modifications?

A: The NSBA115EDXV6T1G is functionally equivalent to the PEMB24,115 across all critical electrical parameters: dual PNP pre-biased configuration, 50V voltage rating, 100kOhm internal biasing resistors, and minimum DC current gain of 80. Circuit modifications are not required for electrical functionality. PCB layout modifications are necessary to accommodate the different package footprints (SOT-563 versus SOT-666).

Q: What are the key differences between these two parts?

A: The NSBA115EDXV6T1G provides higher electrical ratings: maximum collector current of 100mA (versus 20mA) and maximum power dissipation of 500mW (versus 300mW). The onsemi part also exhibits lower collector cutoff current (500nA versus 1µA). The primary difference is product status: NSBA115EDXV6T1G is actively manufactured by onsemi, while PEMB24,115 is designated "Not For New Designs" by Nexperia.

Q: Are there any compatibility issues with the different package types?

A: The PEMB24,115 uses SOT-666 packaging while the NSBA115EDXV6T1G uses SOT-563 packaging. Both are surface mount packages with compatible pinout configurations for dual pre-biased PNP transistor applications. PCB footprint redesign is required to transition between these packages. Consult the respective manufacturer datasheets for precise dimensional specifications and pin assignments.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the PEMB24,115 and NSBA115EDXV6T1G are RoHS3 compliant and REACH unaffected. Both carry MSL 1 (Unlimited) moisture sensitivity ratings and EAR99 ECCN classification. Regulatory compliance is equivalent between the two parts.

Q: Why should I select the NSBA115EDXV6T1G over the PEMB24,115?

A: The NSBA115EDXV6T1G is the recommended selection for all applications. The PEMB24,115 carries "Not For New Designs" status from Nexperia, indicating discontinued active development. The onsemi part maintains active product status with superior availability (32,400 pieces in stock versus 808 pieces), higher electrical ratings providing design margin, and ongoing manufacturer support.

Q: What is the significance of the "Not For New Designs" status?

A: "Not For New Designs" indicates that Nexperia has discontinued active development, optimization, and long-term support for the PEMB24,115. This designation signals that the part should not be selected for new circuit implementations. Existing applications may continue to use available inventory, but new designs should transition to actively supported alternatives such as the NSBA115EDXV6T1G.

Q: Are the internal biasing resistor values identical between these parts?

A: Yes. Both the PEMB24,115 and NSBA115EDXV6T1G incorporate identical internal biasing resistor configurations: 100kOhm base resistor (R1) and 100kOhm emitter-base resistor (R2). This equivalence ensures identical biasing behavior and switching characteristics in circuit applications.